Feedback Reduction for Multiuser OFDM Systems

Feedback reduction in multiuser orthogonal frequency-division multiplexing (OFDM) systems has become an important issue due to the excessive amount of feedback required to use opportunistic scheduling, particularly when the number of users and carriers is large. In this paper, we propose a novel feedback-reduction scheme for efficient downlink scheduling. In the proposed scheme, each user determines the amount of feedback based on the so-called feedback efficiency in a distributed manner. The key idea is to give more of an opportunity for feedback to users who are more often scheduled. Simulation results demonstrate that the proposed scheme can substantially decrease the feedback load while achieving almost the same scheduling performance as in the case of full feedback. In addition, the proposed scheme offers unique advantages over existing ones. First, it is not tailored to a specific scheduling policy; thus, it has adaptability to the change of the underlying scheduling policy. Second, the total feedback load can be maintained below a target level, regardless of the number of users in the system.      

A physics-based GaAs PHEMT noise model for low drain bias operation using characteristic potential method

A new physics-based noise model of a GaAs PHEMT is developed using the characteristic potential method (CPM). The model calculates the intrinsic noise current sources using CPM. Combined with the extrinsic noise parameters extracted from the measured S-parameters, the model reproduces four noise parameters of the device accurately under low drain bias voltages without using any fitting parameters. The model is verified with a 0.2-/spl mu/m GaAs PHEMT and shows excellent agreement with the measurements for all the noise parameters up to a drain voltage of 1 V Also, the proposed method allows the simulation of the microscopic noise distribution and thus allows one to obtain a physical understanding of noise mechanisms inside the device.     

Switched‐Capacitor Variable Gain Amplifier with Operational Amplifier Preset Technique

We present a novel operational amplifier preset technique for a switched‐capacitor circuit to reduce the acquisition time by improving the slewing. The acquisition time of a variable gain amplifier (VGA) using the proposed technique is reduced by 30% compared with a conventional one; therefore, the power consumption of the VGA is decreased. For additional power reduction, a programmable capacitor array scheme is used in the VGA. In the 0.13 μm CMOS process, the VGA, which consists of three‐stages, occupies 0.33 mm² and dissipates 19.2 mW at 60 MHz with a supply voltage of 1.2 V. The gain range is 36.03 dB, which is controlled by a 10‐bit control word with a gain error of ±0.68 LSB.     

Improved device performances in polymer light-emitting diodes using a stamp transfer printing process

The device performances of spin-coated and stamp transfer printed devices were compared. There was little difference of morphology between the spin-coated and stamp transfer printed devices. However, the stamp transfer printing process was better than the spin-coating process in terms of current density, light-emitting efficiency and lifetime. In particular, the lifetime of the stamp transfer printed device was doubled compared with that of the spin-coated device.     

Unraveling the Significance of Li+/e−/O2 Phase Boundaries with a 3D-Patterned Cu Electrode for Li–O2 Batteries

The reaction kinetics at a triple-phase boundary (TPB) involving Li⁺, e⁻, and O₂ dominate their electrochemical performances in Li–O₂ batteries. Early studies on catalytic activities at Li⁺/e⁻/O₂ interfaces have enabled great progress in energy efficiency; however, localized TPBs within the cathode hamper innovations in battery performance toward commercialization. Here, the effects of homogenized TPBs on the reaction kinetics in air cathodes with structurally designed pore networks in terms of pore size, interconnectivity, and orderliness are explored. The diffusion fluxes of reactants are visualized by modeling, and the simulated map reveals evenly distributed reaction areas within the periodic open structure. The 3D air cathode provides highly active, homogeneous TPBs over a real electrode scale, thus simultaneously achieving large discharge capacity, unprecedented energy efficiency, and long cyclability via mechanical/electrochemical stress relaxation. Homogeneous TPBs by cathode structural engineering provide a new strategy for improving the reaction kinetics beyond controlling the intrinsic properties of the materials.     

Precious‐Metal‐Free Electrocatalysts for Activation of Hydrogen Evolution with Nonmetallic Electron Donor: Chemical Composition Controllable Phosphorous Doped Vanadium Carbide MXene

The insufficient strategies to improve electronic transport, the poor intrinsic chemical activities, and limited active site densities are all factors inhibiting MXenes from their electrocatalytic applications in terms of hydrogen production. Herein, these limitations are overcome by tunable interfacial chemical doping with a nonmetallic electron donor, i.e., phosphorization through simple heat‐treatment with triphenyl phosphine (TPP) as a phosphorous source in 2D vanadium carbide MXene. Through this process, substitution, and/or doping of phosphorous occurs at the basal plane with controllable chemical compositions (3.83–4.84 at%). Density functional theory (DFT) calculations demonstrate that the P? C bonding shows the lowest surface formation energy (ΔG_Surf) of 0.027 eV Å^?2 and Gibbs free energy (ΔG_H) of –0.02 eV, whereas others such as P‐oxide and P? V (phosphide) show highly positive ΔG_H. The P3–V₂CT_x treated at 500 °C shows the highest concentration of P? C bonds, and exhibits the lowest onset overpotential of –28 mV, Tafel slope of 74 mV dec^?1, and the smallest overpotential of ‐163 mV at 10 mA cm^?2 in 0.5 m H₂SO₄. The first strategy for electrocatalytically accelerating hydrogen evolution activity of V₂CT_x MXene by simple interfacial doping will open the possibility of manipulating the catalytic performance of various MXenes.     

Double-Layer antireflection coating design for semi-infinite one-dimensional photonic Crystals

A theoretical formalism is established for double-layer (DL) antireflection coating (ARC) on a one-dimensional (1-D) photonic crystal (PC). Conventional DL-ARC for a bulk is equally applicable for a 1-D PC when the bulk substrate index is replaced with the optical admittance, which can be obtained from the electromagnetic Bloch waves of the infinite 1-D PC. Numerical calculations are performed for a model structure composed of GaAs and AlAs-oxide layers to confirm the validity of the theory. In terms of realization and practicality, this DL-ARC is expected to be superior to the single-layer version.     

Thermal buffer materials for enhancement of device performance of organic light emitting diodes fabricated by laser imaging process

Laser Induced Thermal Imaging (LITI) is a laser addressed thermal patterning technology with unique advantages such as an excellent uniformity of transfer film thickness, a capability of multilayer stack transfer and a possibility to fabricate high resolution as well as large-area display. Nevertheless, it has been an obstacle to use such a laser imaging process as a commercial technology so far because of serious deterioration of the device performances plausibly due to a re-orientation of the molecular stacking especially in the emitting layer during thermal transfer process. To improve device performances, we devised a new concept to suppress the thermal degradation during such kind of thermal imaging process by using a high molecular weight small molecular species with large steric hindrance as well as high thermostability as a thermal buffer layer to realize highly efficient LITI devices. As a result, we obtained very high relative efficiency (by EQE) up to 91.5% at 1000 cd/m² from the LITI devices when we utilize 10-(naphthalene-2-yl)-3-(phenanthren-9-yl)spiro[benzo[ij]tetraphene-7,9′-fluorene] as a thermal buffer material.     

Variable length signal detection framework for cognitive radio systems

The cognitive radio (CR) system opportunistically utilizes the frequency bands temporally unoccupied by the primary user. In the CR system, the energy or cyclostationary detector is used to detect the primary user signal. For protecting the primary user tightly, the signal detection time can be very long, which leads to inefficiency in the CR system. Thus, we propose a novel signal detector that greatly reduces the average detection time. The proposed detector periodically decides whether it terminates the detection process or receives more input signal for more information. Therefore, the proposed detector has variable detection time. We will call the proposed detector the variable length signal detector (VLSD). The VLSD is designed by using a partially observable Markov decision process framework for optimal performance. We present the numerical results showing that the VLSD requires much smaller average detection time compared with the traditional fixed length signal detector to achieve a given detection error probability. Copyright © 2012 John Wiley & Sons, Ltd.     

High current conduction with high mobility by non-radiative charge recombination interfaces in organic semiconductor devices

We report a unique non-radiative p-n-p junction structure to provide high current conduction with high mobility in organic semiconductor devices. The current conduction was improved by increasing p-n junctions made with intrinsic p-type hole transport layer and n-type electron transport layer. The excellent hole mobility of 5.3 × 10^?1 cm²/V s in this p-n-p device configuration is measured by the space charge limited current method with an electric field of 0.3 MV/cm. Enhanced current conduction of 248% at 4.0 V was observed in fluorescent blue organic light-emitting diodes with introduction of non-radiative p-n-p-n-p junction interfaces. Thereupon, the power efficiency at 1000 cd/m² was improved by 22% and the driving voltage also was reduced by 17%, compared to that of no interface device. Such high current conduction with high mobility is attributed to the carrier recombination at p-n-p interfaces through coulombic interaction. This non-radiative p-n-p junction structure suggested in this report can be very useful for many practical organic semiconductor device applications.