Element by element a posteriori error estimation and improvement of stress solutions for two-dimensional elastic problems

A quantitative method of a posteriori error estimation based on finite element solutions is developed. The proposed method can estimate the error of solutions obtained by the finite element method for two-dimensional elastic problems with 4-node elements. Since the error is estimated element by element, the proposed method does not require a large memory or long computing time. Not only rectangular elements but also arbitrarily shaped 4-node elements can be used in this method for estimating the error in the finite element computation with high accuracy. The finite element solutions are improved by adding the estimated errors onto the original solutions. The proposed method can be utilized for any type of linear problem if an isoparametric finite element method is used.     

Block-Orthogonal Frequency Division Multiplexing in Multi-Path Fading Channel

Orthogonal frequency division multiplexing (OFDM) is robust against multi-path interference due to using a lot of low symbol rate sub-carriers. In order to mitigate the degradation due to multi-path interference, guard time interval (GI) is inserted into each OFDM symbol. However, redundant allocation to GI leads to loss of effective transmission power. We propose the Block-OFDM which can reduce the GI overhead ratio per frame compared with conventional OFDM. In Block-OFDM system frequency domain equalization (FDE) is carried out in order to remove multi-path interference. We evaluated Block-OFDM performance in a frequency selective fading channel and compared with that of conventional OFDM. Ryohei Kimura received his B.E. and M.S degrees in communications engineering form Tohoku University, Sendai, Japan, in 2001 and 2003, respectively. In 2003, he joined Panasonic Mobile Communications Co., Ltd. His current research interests include such mobile communication technologies as OFDM and MIMO (MLD), and the like. Akiyoshi Monma received his B.E. in communications engineering form Tohoku University, Sendai, Japan, in 1998. In 1998, he joined Panasonic Mobile Communications Sendai R&D Lab. Co., Ltd. His current research interests include such mobile communication technologies as OFDM and PAPR reduction, and the like. Jinsong Duan received his B.E. and M.S. from Changsha Institute of Technology, China in 1987 and 1990. He received his Ph.D. from Osaka City University, Japan in 2000. From 2000–2003 he was with Mitsubishi Electric Corporation, where he engaged in research and development of WCDMA systems. From 2003, he joined Panasonic Mobile Communications Co., Ltd. His current interests include such mobile communication technologies as OFDM, MIMO, link adaptation, scheduling, and TDMA/FDMA/CDMA systems. Mitsuru Uesugi received his B.E. degree from Waseda University in 1986 and received his Ph.D degree from Tohoku University in 2004, respectively. He is a general manager in the Mobile Communication Technology Development Center of Panasonic Mobile Communications Co., Ltd. His current research interests include such mobile communication technologies as equalization, interference cancellation, modulation method, and the like.     

A 128-kb FeRAM macro for contact/contactless smart-card microcontrollers

This paper describes a 128-kb FeRAM macro for smart-card microcontrollers. This macro, which was designed and fabricated using a 0.35-/spl mu/m three-metal CMOS and a Capacitor-on-Metal/Via-stacked-Plug (CMVP) process technology, is ideally suited for recent system LSIs such as smart-card microcontrollers. It has a flexible memory size ranging from 32 to 128 kb, a low consumption current of 0.3 mA, and endurance of more than 10/sup 8/ write/read cycles under a wide range of supply voltages, from 2.7 to 5.5 V. These characteristics, which are required of not only contact-type smart-card microcontrollers but also contactless-type ones, were achieved by using four newly developed circuit technologies: 1) a three-metal CMVP memory cell; 2) a voltage-regulating architecture; 3) a main/sub bitline and wordline structure; and 4) a dynamic-type offset sense amplifier.     

Cytokine-induced neutrophil chemoattractant gene expression in the rat hypothalamus by osmotic stimulation

Cytokine-induced neutrophil chemoattractant (CINC) is one of the chemokines and has chemotaxity for neutrophils. Recently, we found the presence of stress-sensitive CINC expression in the hypothalamic nuclei such as the paraventricular nucleus. Since CINC was predominantly co-localized with vasopressin in the supraoptic nucleus (SON), we investigated the effect of hyperosmotic challenge on CINC mRNA in the hypothalamus. We found that CINC mRNA expression in the hypothalamus was augmented within 30 min following osmotic stimulation and immediately returned to the basal level. The suckling, which is a stimulation to oxytocin neurons in the SON, has no effect on CINC mRNA expression in the hypothalamus. This is the first evidence that the chemokine in the brain is activated by osmotic stimulation.     

The effect of ulinastatin on CFU-C colony formation in mouse myelocyte cultures

The mixture of 5'-guanylylimidodiphosphate (Gpp(NH)p)/EDTA/NaCl has been used to delineate low-affinity conditions for agonists binding to G-protein-linked receptors. The effects of this mixture on [3H]RX821002 (2-methoxyidazoxan) binding to alpha2-adrenoceptors were evaluated in different tissues. The density of alpha2-adrenoceptors in the presence of the mixture was 11, 78 and 60% higher in human cortex (predominant alpha2A), human caudate (alpha2A + alpha2C) and rat kidney (alpha2A + alpha2B), respectively, than in its absence. In rat kidney, masking of alpha2B-adrenoceptors by ARC239 (2-[2-[4-(o-methoxyphenyl)-piperazin-1-yl]-ethyl]-4,4-dimethyl-1,3 -(2H,4H)-isoquinolindione) (50 nM) or masking of alpha2A-adrenoceptors by BRL44408 (2-[2H-(1-methyl-1,3-dihydroisoindole)methyl]-4,5-dihydroimidaz ole) (100 nM) demonstrated that the increase was in the alpha2B-adrenoceptor but not in the alpha2A-adrenoceptor subtype.     

Property of Amorphous/Nanocrystalline Hybrid Wires of TiNi-Base Shape Memory Alloys

The microstructures and mechanical properties of amorphous/nanocrystalline hybrid TiNi wires produced by severe cold drawing were investigated. Annealed wires of Ti-50.9?mol%Ni and Ti-41?mol%Ni-8.5?mol%Cu were subjected to severe cold drawing of 50-70% reduction. The as-drawn TiNi wires were composed of the mixture of amorphous phase and predominantly B2 nanocrystalline phase. Young??s modulus increased with the drawing reduction which can be attributed to the increase in the amount of amorphous phase. For the binary TiNi wires, the volume fraction of amorphous phase was estimated to be about 60% from Young??s modulus and electrical resistivity. The wires drawn over 60% exhibited peculiar large linear elastic strain which is quite different from superelasticity. Aging at 573?K led to an increase in tensile elongation as well as in the recoverable strain. The amorphization by cold drawing was also confirmed for Ti-41?mol%Ni-8.5?mol%Cu in 62% drawn wires.     

950 keV, 3.95 MeV and 6 MeV X-band linacs for nondestructive evaluation and medicine

We are developing compact X-band linac X-ray sources for nondestructive evaluation and medicine. First, we develop a portable X-ray system by a 950 keV 9.4 GHz X-band linac to realize on-site inspection. We use a low power (250 kW) magnetron as an RF source for compactness of the whole system. Since the RF power source is quite small and the stored energy in the structure is also small, we faced the problem of beam loading and current/RF-power oscillation. We are analyzing the problem by the circuit model. We plan to use this system for erosion inspection of metal pipes of petrochemical complex. By adopting a side-coupling cavity design to avoid the oscillation, we have developed 6 MeV X-band (9.3 GHz) linac for pinpoint dynamic tracking cancer therapy. Furthermore, we are manufacturing 3.95 MeV X-band (9.3 GHz) linac X-ray source with flexible waveguides for on-site bridge inspection. Updated results and situations are presented.     

Reconstitution of hepatic tissue architectures from fetal liver cells obtained from a three-dimensional culture with a rotating wall vessel bioreactor

Reconstitution of tissue architecture in vitro is important because it enables researchers to investigate the interactions and mutual relationships between cells and cellular signals involved in the three-dimensional (3D) construction of tissues. To date, in vitro methods for producing tissues with highly ordered structure and high levels of function have met with limited success although a variety of 3D culture systems have been investigated. In this study, we reconstituted functional hepatic tissue including mature hepatocyte and blood vessel-like structures accompanied with bile duct-like structures from E15.5 fetal liver cells, which contained more hepatic stem/progenitor cells comparing with neonatal liver cells. The culture was performed in a simulated microgravity environment produced by a rotating wall vessel (RWV) bioreactor. The hepatocytes in the reconstituted 3D tissue were found to be capable of producing albumin and storing glycogen. Additionally, bile canaliculi between hepatocytes, characteristics of adult hepatocyte in vivo were also formed. Apart from this, bile duct structure secreting mucin was shown to form complicated tubular branches. Furthermore, gene expression analysis by semi-quantitative RT-PCR revealed the elevated levels of mature hepatocyte markers as well as genes with the hepatic function. With RWV culture system, we could produce functionally reconstituted liver tissue and this might be useful in pharmaceutical industry including drug screening and testing and other applications such as an alternative approach to experimental animals.     

Effect of proton irradiation on electrical properties of CuInSe2 thin films

High-energy proton irradiation (380 keV and 1 MeV) on the electrical properties of CuInSe₂ (CIS) thin films has been investigated. The samples were epitaxially grown on GaAs (0 0 1) substrates by Radio Frequency sputtering. As the proton fluence exceeded 1×10¹³ cm⁻², the carrier concentration and mobility of the CIS thin films were decreased. The carrier removal rate with proton fluence was estimated to be about 1000 cm⁻¹. The electrical properties of CIS thin films before and after irradiation were studied between 80 and 300 K. From the temperature dependence of the carrier concentration in CIS thin films, we found N_D=9.5×10¹⁶ cm⁻³, N_A=3.7×10¹⁶ cm⁻³ and E_D=21 meV from the fitting to the experimental data on the basis of the charge balance equation. After irradiation, a defect level was created, and N_T=1×10¹⁷ cm⁻³ for a fluence of 3×10¹³ cm⁻², N_T=5.7×10¹⁷ cm⁻³ for a fluence of 1×10¹⁴ cm⁻² and E_T=95 meV were also obtained from the same fitting. The new defect, which acted as an electron trap, was due to proton irradiation, and the defect density was increased with proton fluence.