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31.
O?uzhan Çiçeko?lu 《Microelectronics Journal》1998,29(12):973-975
A simple new circuit realising negative immittances using a single commercially available CFOA is presented. The simulated immittance values can orthogonally be adjusted and all passive sensitivities are no more than unity. For the circuit the phase angle of the realised immittances are independent of the three CFOA non-idealities and the circuit allows easy compensation for these active errors. 相似文献
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Cebrail Çiflikli A. Tuncay Özşahin A. Çağrı Yapici 《Wireless Personal Communications》2009,51(2):221-229
The many advantages responsible for the widespread application of orthogonal frequency division multiplexing (OFDM) systems
are limited by the multipath fading. In OFDM systems, channel estimation is carried out by transmitting pilot symbols generally.
In this paper, we propose an artificial neural network (ANN) channel estimation technique based on levenberg-marquardt training
algorithm as an alternative to pilot based channel estimation technique for OFDM systems over Rayleigh fading channels. In
proposed technique, there are no pilot symbols which added to OFDM. Therefore, this technique is more bandwidth efficient
compared to pilot-based channel estimation techniques. Also, this technique is making full use of the learning property of
neural network. By using this feature, there is no need of any matrix computation and the proposed technique is less complex
than the pilot based techniques. Simulation results show that ANN based channel estimator gives better results compared to
the pilot based channel estimator for OFDM systems over Rayleigh fading channel. 相似文献
35.
Nadeem Qaiser Fhad Al-Modaf Sherjeel Munsif Khan Sohail Faizan Shaikh Nazek El-Atab Muhammad Mustafa Hussain 《Advanced functional materials》2021,31(29):2103375
Point-of-care testing (POC) has the ability to detect chronic and infectious diseases early or at the time of occurrence and provide a state-of-the-art personalized healthcare system. Recently, wearable and flexible sensors have been employed to analyze sweat, glucose, blood, and human skin conditions. However, a flexible sensing system that allows for the real-time monitoring of throat-related illnesses, such as salivary parotid gland swelling caused by flu and mumps, is necessary. Here, for the first time, a wearable, highly flexible, and stretchable piezoresistive sensing patch based on carbon nanotubes (CNTs) is reported, which can record muscle expansion or relaxation in real-time, and thus act as a next-generation POC sensor. The patch offers an excellent gauge factor for in-plane stretching and spatial expansion with low hysteresis. The actual extent of muscle expansion is calculated and the gauge factor for applications entailing volumetric deformations is redefined. Additionally, a bluetooth-low-energy system that tracks muscle activity in real-time and transmits the output signals wirelessly to a smartphone app is utilized. Numerical calculations verify that the low stress and strain lead to excellent mechanical reliability and repeatability. Finally, a dummy muscle is inflated using a pneumatic-based actuator to demonstrate the application of the affixed wearable next-generation POC sensor. 相似文献
36.
Aristides D. Tagalakis Vignesh Jayarajan Ruhina Maeshima Kin H. Ho Farhatullah Syed Lin-Ping Wu Ahmad M. Aldossary Mustafa M. Munye Talisa Mistry Olumide Kayode Ogunbiyi Arturo Sala Joseph F. Standing Seyed M. Moghimi Andrew W. Stoker Stephen L. Hart 《Advanced functional materials》2021,31(37):2104843
37.
Telecommunication Systems - This paper proposes two algorithms for hybrid (Analog–Digital) beamforming in a single-user millimeter-wave (mm-wave) multi-input multi-output (MIMO) systems under... 相似文献
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脉冲ArF准分子激光淀积SiC/Si(100)薄膜的最佳晶化温度及光致发光 总被引:2,自引:0,他引:2
用脉冲 Ar F准分子激光熔蚀 Si C陶瓷靶 ,在 80 0℃ Si(10 0 )衬底上淀积 Si C薄膜 ,经不同温度真空 (10 - 3Pa)退火后 ,用 FTIR、XRD、TEM、XPS、PL 谱等分析方法 ,研究了薄膜最佳晶化温度及表面形态、结构、组成 ,并对在最佳退火温度处理后的样品进行了化学态、微结构及光致发光的研究 .结果表明 ,在 Si(10 0 )上 80 0℃淀积的样品为非晶Si C薄膜 .经 85 0— 10 5 0℃不同温度真空退火后 ,Si C薄膜经非晶核化 -长大过程 ,在 980℃完成最佳晶化 .随退火温度的变化 ,薄膜中可能存在 3C- Si C与 6 H- Si C的竞争生长或 /和 3C- Si C相的长、消 (最佳温度 相似文献
40.