Global adaptive stabilization of infinite-dimensional systems

The purpose of this paper is to show that a first-order adaptive regulator globally stabilizes a class of infinite-dimensional systems having no right half plane zeros. Knowledge of the spectrum of the model's high-frequency gain is not required.     

Error grid analysis of noninvasive glucose monitoring via gingival crevicular fluid.

In order to realize a noninvasive blood glucose monitor, we monitored the gingival crevicular fluid (GCF). In this paper, the clinical evaluations were performed on not only normal subjects but also diabetic subjects using a GCF-glucose monitor to determine blood glucose levels. Meal load tests were carried out and the time-course changes in blood glucose level and GCF glucose level were measured continuously. A positive correlation of more than 0.9 was found between blood glucose level and GCF glucose level, necessitating the calibration of individual correlations for every subject. Finally, the performance of the GCF-glucose monitor was evaluated using Error Grid Analysis. As the results, significant information for the glucose level decision was obtained not only for normal subjects, but also for diabetic subjects.     

Cluster Properties Investigated From a Series of Ultrawideband Double Directional Propagation Measurements in Home Environments

Results from double directional ultrawideband (UWB) channel sounding in a wooden house are described. The double directional channel sounder estimates directional information at both ends of the link, so that we can separate antenna directivity from the channel sounding results. We investigated the dominant propagation mechanisms by introducing cluster analyses. The detected propagation paths from the channel sounding were first classified into clusters in the angular-delay domain, and then properties of the clusters such as standard deviation of path positions, dynamic range of path power, and power distribution of clusters were derived. From the results, we discussed the similarities and differences between the measurement environment and the physical propagation phenomena. Finally, different types of scattering losses of the propagation paths were derived and modeled. The results from sounding and analysis contribute in the development of UWB propagation models and can be used in UWB propagation simulations     

Dielectric spectroscopy of metal nanoparticle doped liquid crystal displays exhibiting frequency modulation response

Twisted nematic liquid crystal displays (TN-LCDs), doped with the nanoparticles of metal, such as Pd, Ag, or Ag-Pd, which are protected with ligand molecules, such as nematic liquid crystal, exhibit a frequency modulation (FM) electro-optical (EO) response with short response time of milliseconds (ms) or sub-ms order together with the ordinary rms voltage response. These devices are called FM/AM-TN-LCDs; they are distinct from the ordinary LCDs featured by the amplitude modulation (AM) response. The phenomena of the FM/AM LCDs may be attributed to the dielectric dispersion of a heterogeneous dielectric medium known as the Maxwell-Wagner effect. It is experimentally shown that the frequency range spreads from several tens hertz to several tens kilohertz and the spectrum is more or less centered about the dielectric relaxation frequency. We formulated a theory based on an equivalent circuit model to evaluate the dielectric relaxation frequency and the dielectric strengths; and we succeeded in explaining the dependence of the dielectric relaxation frequency on the concentration of nanoparticles and the their dielectric and electrical properties, whereas conventional theories based on electromagnetic theory are unable to explain this concentration dependence. This paper reports on the experimental results of the EO effects and the dielectric spectroscopy including the dielectric relaxation times and the dielectric strengths of nematic liquid crystal, 5CB (4-pentyl-4'-cyanobiphenyl), doped with the metal nanoparticles of I'd alone and Ag-Pd composite; and discusses how the observed dielectric relaxation frequency or dielectric relaxation time depend on the concentration of the doped nanoparticles and also their electrical and dielectric properties.     

Monolithically integrated 780-nm-band high-power and 650-nm-bandlaser diodes with real refractive index guided self-aligned structure

780-nm-band high-power and 650-nm-band laser diodes (LDs) with real refractive index guided self-aligned (RISA) structures are monolithically integrated for the first time. High-power and fundamental transverse mode operation at an output power of 100-mW continuous wave (CW) up to 80°C is attained for the 780-nm-band LD. For the 650-nm-band LD, high temperature and fundamental transverse mode operation at an output power of 10-mW CW up to 80°C is obtained     

Electron microscopic visualization of collagen aggregates without chemical staining.

Lateral, uni-directional aggregates of collagen, segment-long-spacing crystallites (SLS), were made by dialyzing collagen solutions against acetic acid containing ATP, and were examined by transmission electron microscopes without electron staining. There detected were at least 20 dark (electron dense) cross-striations within SLS. The banding pattern was compared with the biochemical and biophysical properties of the amino acid side chains along the collagen molecule. The banding pattern of unstained SLS was mostly correlated with the intramolecular distribution of basic amino acid residues. Since basic amino acids have relatively large side chains, the distribution of mass (molecular weight of amino acids) along the molecule (local density profile) partially explained the cross-striation. Addition of fractions of molecular weight of ATP to basic residues made the local density profile much better correlate to the banding pattern. We conclude that the electron microscopic banding pattern of unstained SLS was generated by the local amount of material or local density profile along the collagen aggregates, which was enhanced by ATP bound to positively charged basic residues. The concept that the electron density correlates with the amount of material is fundamental in electron microscopy, and it has been proven with biological materials in this paper.     

CMOS-compatible lateral bipolar transistor for BiCMOS technology.II. Experimental results

For Pt.I see ibid., vol.39, no.4, p.948-51 (1992). Characteristics of a CMOS-compatible lateral bipolar transistor suitable for low-cost and high-speed BiCMOS LSIs are described. The proposed transistor has a structure analogous to that of the NMOS transistor, which employs a source and drain self-aligned structure to form an emitter and collector. The obtained values of h_FE, BV_CEO, R _CS, f_Tmax, and r_bb', are 20, 7 V, 50 Ω, 6.3 GHz, and 450 Ω, respectively. Moreover, delay times of a two-input NAND BiCMOS gate circuit are 0.28 ns when unloaded, and 0.42 and 0.53 ns when load capacitances are 1 and 2 pF, respectively. These values are comparable to those for BiCMOS circuits using the conventional vertical bipolar transistors     

Analysis and synthesis of tapered microstrip transmission lines

The input voltage reflection coefficient on a tapered microstrip transmission line is analyzed and a new Fourier transform pair is derived which introduces echo time and frequency as variables. Calculations of the input reflection coefficient take into account the frequency dispersion-characteristics of the effective permittivity. An efficient method is proposed for analysis and synthesis of microstrip tapers and numerical results are presented for microstrip exponential tapers and microstrip Chebyshev tapers     

A new erasing and row decoding scheme for low supply voltageoperation 16-Mb/64-Mb flash memories

To improve the performance of high-density flash memories, several circuit technologies have been developed. A word-line boost and clamp scheme realizes low supply voltage read operations. A flash programming scheme utilizing Fowler-Nordheim (F-N) tunneling for programming before erasure and a negative gate biased erasing scheme accomplish low-power, high-speed, and 5-V-only erase operations. The chip size penalty is estimated to be only 3% for the 16-Mb flash memories     

A Bit-Error Rate Measurement and Error Analysis of Wireline Data Transmission using Current Source Model for Single Event Effect under Irradiation Environment

A high-speed wireline interfaces, e.g. LVDS (Low Voltage Differential Signaling), are widely used in the aerospace field for powerful computing in artificial satellites and aircraft [19]. This paper describes Bit Error Rate (BER) prediction methodology for wireline data transmission under irradiation environment at the design stage of data transmitter, which is useful in proactively determining if the design circuit meets the BER criteria of the target system. Using a custom-designed LVDS transmitter (TX) to enhance latch-up immunity [42], the relationship between transistor size and BER has been analyzed with focusing on Single Event Effect (SEE) as a cause of the bit error. The measurement was executed under ⁸⁴Kr¹⁷⁺ exposure of 322.0 MeV at various flux condition from 1?×?10³ to 5?×?10⁵ count/cm²/sec using cyclotron facility. For the analysis of the bit error, circuit simulation by SPICE was utilized with expressing the irradiation environment by a current source model. The current source model represents a single event strike into the circuit at drain and substrate junctions in bulk MOSFETs. For the construction of the current source model, a charge collection was simulated at the single particle strike with the creation of 3D Technology CAD (TCAD) models for the MOS devices of bulk transistor process technology. The simulation result of the charge correction was converted to a simple time-domain equation, and the single-event current source model was produced using the equation. The single-event current source was applied to SPICE simulation at bias current related circuits in the LVDS transmitter, then simulation results are carefully verified whether the output data is disturbed enough to cause bit errors on wireline data transmission. By the simulation, sensitive MOSFETs have been specified and a sum of the gate area for these MOSFETs has 29% better correlation than the normal evaluation index (sum of the drain area) by comparison to the actual BER measurement. Through the precise revelation of the sensitive area by SPICE simulation using the current model, it became possible to estimate BER under irradiation environment at the pre-fabrication design stage.