Quantification of surface damage of tool steels after EDM

The surface transformation and damage in AISI O1, A2, D2 and D6 tool steels after EDM were investigated. The results show that the recast layer is composed of two distinct layers: a topmost layer solidifying inwards from the specimen surface and an intermediate layer solidifying outwards from the base of the molten metal. The depth of surface cracks is found to correlate well with the thickness of the white layer, the latter being a layer of rapidly solidified material which, depending on the tool steel material, may consist either primarily of the topmost recast layer, or both the topmost and a large part of the intermediate recast layer. The density of surface cracks, however, correlates better with the thickness of the overall recast layer.

Attempts were made to quantify the depth of white (or damaged) layer with respect to the process parameters and surface roughness after EDM. It is found that with a fixed dielectric and flushing condition, the damaged layer correlates well with the pulse energy irrespective of thetool steel material. On the other hand, even though the thickness of the white layer increases with the surface roughness, the result shows considerably more scatter. Based on the present findings, ways of estimating the depth of the damaged layer produced by EDM are proposed.     

Optical and Electrical Properties of TixSi1‐xOy Films

Ti_xSi_1xO_y (TSO) thin films are fabricated using plasma‐enhanced atomic layer deposition. The Ti content in the TSO films is controlled by adjusting the sub‐cycle ratio of TiO₂ and SiO₂. The refractive indices of SiO₂ and TiO₂ are 1.4 and 2.4, respectively. Hence, tailoring of the refractivity indices from 1.4 to 2.4 is feasible. The controllability of the refractive index and film thickness enables application of an antireflection coating layer to TSO films for use as a thin film solar cell. The TSO coating layer on an Si wafer dramatically reduces reflectivity compared to a bare Si wafer. In the measurement of the current‐voltage characteristics, a nonlinear coefficient of 13.6 is obtained in the TSO films.     

Performance of DS/CDMA-based equatorial LEO satellite system usingturbo-codes

Improving the bit error rate (BER) performance at low elevation angles is a crucial determining factor for the capacity of any low earth orbit (LEO) satellite system. In previous work, it has been demonstrated that the BER performance of a DS/CDMA-based equatorial LEO satellite system on a downlink can be improved significantly by using satellite diversity. The authors address the issue of improving BER at low elevation angles by using turbo codes     

Surface graft copolymerization enhanced adhesion of an epoxy-basedprinted circuit board substrate (FR-4) to copper

The lamination of surface modified printed circuit board (PCB) substrate, FR-4(R), from argon plasma pretreatment and UV-induced graft copolymerization with glycidyl methacrylate (GMA), to copper foil was carried out at elevated temperature and in the presence of an epoxy adhesive. The structure and chemical composition of the graft copolymerized surfaces and interfaces of the glass fiber-reinforced and epoxy-based FR-4 substrates were studied by X-ray photoelectron spectroscopy (XPS). The effects of the plasma pretreatment time, the UV illumination time, as well as the curing temperature, on the adhesion strength between the FR-4 substrate and copper were investigated. The assemblies involving GMA graft copolymerized FR-4, or the FR-4-GMA/epoxy resin/Cu assemblies, exhibited a significantly higher interfacial adhesion strength and reliability, in comparison to those assemblies in which only epoxy adhesive alone was used. The enhanced adhesion in the assemblies involving GMA graft copolymerized substrate arises from the fact that the covalently tethered GMA graft chains on the FR-4 surface can become covalently incorporated into the epoxy resin, resulting in the toughening of the epoxy matrix and increased interaction with copper     

A 16-bit carry-lookahead adder using reversible energy recoverylogic for ultra-low-energy systems

In this paper, we describe an energy-efficient carry-lookahead adder using reversible energy recovery logic (RERL), which is a new dual-rail reversible adiabatic logic. We also describe an eight-phase, clocked power generator that requires an off-chip inductor. For the energy-efficient design of reversible logic, we explain how to control the overhead of reversibility with a self-energy-recovery circuit. A test chip was implemented with a 0.8 μm CMOS technology, which included two 16-bit carry-lookahead adders to allow fair comparison: an RERL one and a static CMOS one. Experimental results showed that the RERL adder had substantial advantages in energy consumption over the static CMOS one at low operating frequencies. We also confirmed that we could minimize the energy consumption in the RERL circuit by reducing the operating frequency until adiabatic and leakage losses were equal     

A power-factor controller for single-phase PWM rectifiers

A novel power-factor controller for single-phase pulsewidth modulated rectifiers is proposed. The unity power-factor controller for a sinusoidal input current is derived using the feedback linearization concept. Two active switches and two diodes are utilized for AC-to-DC power conversion. Experimental results obtained on a 4 kW prototype are discussed     

Anodization for Simplified Processing and Efficient Charge Transport in Vertical Organic Field‐Effect Transistors

Vertical organic transistors are an attractive alternative to realize short channel transistors, which are required for powerful electronic devices and flexible electronic circuits operating at high frequencies. Unfortunately, the vertical device architecture comes along with an increased device fabrication complexity, limiting the potential of this technology for application. A new design of vertical organic field‐effect transistors (VOFETs) with superior electrical performance and simplified processing is reported. By using electrochemical oxidized aluminum oxide (AlO_x) as a pseudo self‐aligned charge‐blocking structure in vertical organic transistors, direct leakage current between the source and drain can be effectively suppressed, enabling VOFETs with very low off‐current levels despite the short channel length. The anodization technique is easy to apply and can be surprisingly used on both n‐type and p‐type organic semiconductor thin films with significant signs of degradation. Hence, the anodization technique enables a simplified process of high‐performance p‐type and n‐type VOFETs, paving the road toward complementary circuits made of vertical transistors.     

Plasmonic Light Beaming Manipulation and its Detection Using Holographic Microscopy

Plasmonic off axis beaming and focusing of light by the use of asymmetric or non-periodic dielectric gratings around a metallic slit are experimentally demonstrated. The far-field probing was done by holographic microscopy. While the conventional near-field microscopes can probe only near-fields, our four-step phase-shift interferometer provides an efficient way of probing and reconstructing light paths coming out from the plasmonic devices. We hope our experimental work contributes to the practical applications of plasmonics such as optical interconnection and optical data storage.      

Ultra-wideband (from DC to 110 GHz) CPW to CPS transition

A new ultra-wideband, low-loss and small-size coplanar waveguide (CPW) to coplanar strip (CPS) transition which can be used from DC to 110 GHz is presented. The proposed transition connects CPW with CPS by the reformed air-bridge. Two ground planes of CPW are tied at their ends by a line and the centre of the line is connected to the ground strip of CPS by another line. Owing to the symmetry of the proposed structure, the currents of two ground planes of CPW are combined with the same phase and transferred to the ground strip of CPS. With height of 3 μm, the signal line of CPW passes over two connecting lines and is connected to the signal strip of CPS. For the back-to-back transition structure, insertion loss <1 dB and return loss >15 dB are obtained from 0.5 to 110 GHz     

Virtual-node-based multicast routing and wavelength assignment in sparse-splitting optical networks

This paper investigates several problems associated with optical multicast routing and wavelength assignment in sparse-splitting optical networks for interactive real-time media distribution. Unfortunately, the constrained multicast routing with optimized wavelength assignment leads to NP-complete condition. Thus, in this paper, a virtual-node-based multicast routing algorithm is first proposed to satisfy the requirements of interactive real-time multicasting as well as the constraints from underlying optical networks. For the constructed multicast tree, we then associate an effective wavelength assignment algorithm. The experimental results show that the proposed algorithm combination performs well in terms of (1) the wavelength channel cost, (2) the maximum variation of inter-destination node delays, (3) the signal quality, and (4) the number of wavelength conversions.