首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   206688篇
  免费   2241篇
  国内免费   569篇
电工技术   3525篇
综合类   144篇
化学工业   31958篇
金属工艺   10274篇
机械仪表   7052篇
建筑科学   4000篇
矿业工程   2162篇
能源动力   4651篇
轻工业   12926篇
水利工程   2923篇
石油天然气   7727篇
武器工业   22篇
无线电   21556篇
一般工业技术   45306篇
冶金工业   34418篇
原子能技术   6625篇
自动化技术   14229篇
  2021年   2069篇
  2019年   2015篇
  2018年   3708篇
  2017年   3751篇
  2016年   4039篇
  2015年   2258篇
  2014年   3815篇
  2013年   8786篇
  2012年   5711篇
  2011年   7256篇
  2010年   5871篇
  2009年   6509篇
  2008年   6626篇
  2007年   6510篇
  2006年   5578篇
  2005年   5124篇
  2004年   4637篇
  2003年   4566篇
  2002年   4373篇
  2001年   4483篇
  2000年   4195篇
  1999年   4202篇
  1998年   10197篇
  1997年   7192篇
  1996年   5504篇
  1995年   4134篇
  1994年   3603篇
  1993年   3846篇
  1992年   2991篇
  1991年   3002篇
  1990年   2893篇
  1989年   2856篇
  1988年   2867篇
  1987年   2514篇
  1986年   2571篇
  1985年   2856篇
  1984年   2689篇
  1983年   2555篇
  1982年   2306篇
  1981年   2272篇
  1980年   2347篇
  1979年   2360篇
  1978年   2382篇
  1977年   2488篇
  1976年   2876篇
  1975年   2189篇
  1974年   2068篇
  1973年   2166篇
  1972年   1940篇
  1971年   1755篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
41.
A method for fabricating single crystal blades that combines the techniques of seed crystals and selection is suggested. The method realizes the advantages of both techniques, i.e., the high structural perfection and the possibility of fabricating single crystals with specified spatial orientation. Metallographic and x-ray diffraction analyses are used to study the processes of nucleation of the single crystal structure of blade castings fabricated from high-temperature nickel alloys by the method of selection and seed crystals. A commercial process for fabricating cast single crystal turbine blades by the new method is suggested.  相似文献   
42.
This paper demonstrates the use of computer simulation for topological design and performance engineering of transparent wavelength-division multiplexing metropolitan-area networks. Engineering of these networks involves the study of various transport-layer impairments such as amplifier noise, component ripple, chirp/dispersion, optical crosstalk, waveform distortion due to filter concatenation, fiber nonlinearities, and polarization effects. A computer simulation methodology composed of three main simulation steps is derived and implemented. This methodology obtains performance estimations by applying efficient wavelength-domain simulations on the entire network topology, followed by time-/frequency-domain simulations on selected paths of the network and finally Q-budgeting on an identified worst case path. The above technique provides an efficient tool for topological design and network performance engineering. Accurate simulation models are presented for each of the performance impairments, and the computer simulation methodology is used for the design and engineering of a number of actual metro network architectures  相似文献   
43.
Pre-metal-deposition reactive ion etching (RIE) was performed on an Al0.3Ga0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs  相似文献   
44.
In this letter, a concise process technology is proposed for the first time to enable the fabrication of good quality three-dimensional (3-D) suspended radio frequency (RF) micro-inductors on bulk silicon, without utilizing the lithography process on sidewall and trench-bottom patterning. Samples were fabricated to demonstrate the applicability of the proposed process technology.  相似文献   
45.
46.
S N Maitra 《Sadhana》1985,8(4):373-385
The burn time and burnout velocity of a multistage rocket flown vertically in vacuum with constant thrust tangential to the flight path and a prescribed initial/final thrust-to-weight ratio in an arbitrary stage have been determined. The present paper also deals with optimal staging under given conditions of flight.  相似文献   
47.
48.
49.
Existing duality principles in structural optimisation are briefly reviewed and then they are extended to structures with segment-wise constant cross-sections. All theories are discussed in the particular context of optimal plastic beam design with symmetric convex specific cost functions and are confirmed by independent calculations on illustrative examples. It is shown that the optimal solution is always associated with a displacement field in which the mean absolute curvature value for each segment equals the subgradient of the specific cost function, with respect to the maximum absolute moment value for that segment. Moreover, the dual problem consists of the maximisation of the difference of two terms: the first one is the integral of the product of load and deflection (external work), and the second is the sum of products of segment lengths and the mean complementary cost values (taken with respect to the mean absolute curvature for that segment). Finally, some tentative proposals for a class of non-convex optimisation problems are presented. For special cases, the proposed general statements reduce to theorems by Heyman, Foulkes and Hemp.  相似文献   
50.
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号