Hydromagnetic boundary layer flow with heat transfer past a rotating disc embedded in a porous medium

In this study, the effect of Coriolis force along with the Darcy parameter has been analyzed on time-dependent forced convective boundary layer flow of conducting fluids over a rotating disc embedded in a porous medium. The modeled system is solved by power series approximations in the Mathematica environment shooted values. The significant impact of the rheological properties, such as Darcy parameter $\beta$ and Prandtl number $\mathit{Pr}$, of water, hydrocarbon, and kerosene-based conducting fluids for the deviation of parameter $\xi$ (Karman) has been noted and then analyzed qualitatively and quantitatively with graphs and tables.     

Structural and electronic properties of lead nanowires: Ab-initio study

Ab-initio self-consistent study has been performed to analyze the stability of lead nanowires in its six stable configurations like linear, zigzag, triangular, ladder, square and dumbbell. In the present study, the lowest energy structures have been analyzed under the revised Perdew-Burke-Ernzerhof (revPBE) parameterization of generalized gradient approximation (GGA) potential. The two-atom zigzag shaped atomic configuration with highest binding energy and lowest total energy has been confirmed as the most stable structure out of the six atomic configurations. The electronic band structure and density of states have been discussed in detail with a remarkable observation in case of three-atom triangular lead nanowire having a very small band gap while other configurations are found to be metallic. Bulk modulus, pressure derivatives and lattice parameters for different lead nanowires have also been computed and discussed.     

Facile one-step transfer process of graphene

Chemical vapour deposition (CVD) is emerging as a popular method for growing large-area graphene on metal substrates. For transferring graphene to other substrates the technique generally used involves deposition of a polymer support with subsequent etching of the metal substrate. Here we report a simpler one-step transfer process. Few-layer graphene (FLG) grown on a Cu substrate were transferred to a silanized wafer by just pressing them together. Hydrogen bonding between the hydroxyl group on FLG and the amine group on silane molecules facilitate the transfer.     

RF, DC, and reliability characteristics of ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate MIM capacitors for Si RF IC applications

High-performance metal-insulator-metal capacitors using atomic layer-deposited HfO/sub 2/-Al/sub 2/O/sub 3/ laminate are fabricated and characterized for RF and mixed-signal applications. The laminate capacitor can offer high capacitance density (12.8 fF//spl mu/m/sup 2/) up to 20 GHz, low leakage current of 4.9/spl times/10/sup -8/ A/cm/sup 2/ at 2 V and 125/spl deg/C, and small linear voltage coefficient of capacitance of 211 ppm/V at 1 MHz, which can easily satisfy RF capacitor requirements for year 2007 according to the International Technology Roadmap for Semiconductors. In addition, effects of constant voltage stress and temperature on leakage current and voltage linearity are comprehensively investigated, and dependences of quadratic voltage coefficient of capacitance (/spl alpha/) on frequency and thickness are also demonstrated. Meanwhile, the underlying mechanisms are also discussed.     

Analysis of Frequency- and Temperature-Dependent Substrate Eddy Currents in On-Chip Spiral Inductors Using the Complex Image Method

Using the complex image method (CIM), we have analyzed the frequency and temperature dependencies of substrate eddy currents for single-ended and differential spiral inductors on a lossy silicon substrate. From our analysis, we have derived a set of accurate closed-form expressions for calculating inductances and substrate losses due to substrate eddy currents. Here, we propose a frequency-dependent eleven-element equivalent circuit model based on these formulas. We established the validity of the model by comparing the simulated and measured results, which are in good agreement.     

Characterisation of linearly graded p-n junction

Electrostatic potential, carrier densities and space charge density distributions have been calculated using an iterative scheme for linearly graded p-n junction. It is found that the results obtained from this scheme are close to those given by rigorous numerical formulations, especially at applied forward bias. As an application of this scheme the charge-defined emitter space-charge-layer transit time has been calculated and results compared with those of numerical algorithms.     

A Wideband Scalable and SPICE-Compatible Model for On-Chip Interconnects Up to 110 GHz

A fully scalable and SPICE compatible wideband model of on-chip interconnects valid up to 110 GHz is presented in this paper. The series branches of the proposed multisegment model consist of an RL ladder network to capture the skin and proximity effects, as well as the substrate skin effect. Their values are obtained from a technique based on a modified effective loop inductance approach and complex image method. A CG network is used in the shunt branches of the model, which accounts for capacitive coupling through the oxide and substrate loss due to the electrical field, as well as the impact of dummy metal fills. The values of these elements are determined by analytical and semiempirical formulas. The model is validated by a full-wave electromagnetic field solver, as well as measurements. The simulated S-parameters of the model agree well with the measured S-parameters of on-chip interconnects with different widths and lengths over a wide frequency range from dc up to 110 GHz.     

Ge-Rich (70%) SiGe Nanowire MOSFET Fabricated Using Pattern-Dependent Ge-Condensation Technique

A top-down approach of forming SiGe-nanowire (SGNW) MOSFET, with Ge concentration modulated along the source/drain (Si_0.7Ge_0.3) to channel (Si_0.3Ge_0.7) regions, is presented. Fabricated by utilizing a pattern-size-dependent Ge-condensation technique, the SGNW heterostructure PMOS device exhibits 4.5times enhancement in the drive current and transconductance (G_m) as compared to the homojunction planar device (Si_0.7Ge_0.3). This large enhancement can be attributed to several factors including Omega-gated nanowire structure, enhanced hole injection efficiency (due to valence band offset), and improved hole mobility (due to compressive strain and Ge enrichment in the nanowire channel).