A quadruple well, quadruple polysilicon BiCMOS process for fast 16Mb SRAM's

An advanced, high-performance, quadruple well, quadruple polysilicon BiCMOS technology has been developed for fast 16 Mb SRAM's. A split word-line bitcell architecture, using four levels of polysilicon and two self-aligned contacts, achieves a cell area of 8.61 μm² with conventional I-line lithography and 7.32 μm² with I-line plus phase-shift or with deep UV lithography. The process features PELOX isolation to provide a 1.0 μm active pitch, MOSFET transistors designed for a 0.80 μm gate poly pitch, a double polysilicon bipolar transistor with aggressively scaled parasitics, and a thin-film polysilicon transistor to enhance bitcell stability. A quadruple-well structure improves soft error rate (SER) and allows simultaneous optimization of MOSFET and bipolar performance     

Parasitic bipolar gain in fully depleted n-channel SOI MOSFET's

Fully depleted SOI MOSFET's include an inherent parasitic lateral bipolar structure with a floating base. We present here the first complete physically based explanation of the bipolar gain mechanism, and its dependence on bias and technological parameters. A simple, one-dimensional physical model, with no fitting parameters, is constructed, and is shown to agree well with simulations and measurements performed on a new type of SOI MOSFET structure. It is shown that parameters which affect the gain, such as SOI layer thickness, body doping concentration and gate and drain voltages, do so primarily by affecting the concentration of holes in the body region. Thus, current gain falls dramatically with increasing drain voltage due to the associated impact ionization driven increase in the hole concentration. Gummel plots of this parasitic bipolar indicate an apparent ideality factor of 0.5 for the hole current, due to the body hole concentration's dependence on drain voltage     

Fabrication of low-loss IR-transmitting Ge30As10Se30Te30 glass fibers

Improved purification and processing techniques have been utilized to fabricate Ge₃₀As₁₀Se₃₀Te₃₀ glass fibers with a minimum loss of O.11 dB/m at 6.6 μm. This is the lowest loss reported for any telluride glass fiber in the infrared region. Furthermore, the fibers exhibit less than 1 dB/m loss between 5.25 and 9.5 μm     

Digital filter bank design quadratic-constrained formulation

Formulate the filter bank design problem as an quadratic-constrained least-squares minimization problem. The solution of the minimization problem converges very quickly since the cost function as well as the constraints are quadratic functions with respect to the unknown parameters. The formulations of the perfect-reconstruction cosine-modulated filter bank, of the near-perfect-reconstruction pseudo-QMF bank, and of the two-channel biorthogonal linear-phase filter bank are derived using the proposed approach. Compared with other design methods, the proposed technique yields PR filter banks with much higher stopband attenuation. The proposed technique can also be extended to design multidimensional filter banks     

Surface tailoring of an ethylene propylene diene elastomeric terpolymer via plasma‐polymerized coating of tetramethyldisiloxane

In the research presented here, we explore the use of a low‐energy plasma to deposit thin silicone polymer films using tetramethyldisiloxane (TMDSO) (H(CH₃)₂? Si? O? Si? (CH₃)₂H) on the surface of an ethylene propylene diene elastomeric terpolymer (EPDM) in order to enhance the surface hydrophobicity, lower the surface energy and improve the degradation/wear characteristics. The processing conditions were varied over a wide range of treatment times and discharge powers to control the physical characteristics, thickness, morphology and chemical structure of the plasma polymer films. Scanning electron microscopy (SEM) shows that pore‐free homogeneous plasma polymer thin films of granular microstructure composed of small grains are formed and that the morphology of the granular structure depends on the plasma processing conditions, such as plasma power and time of deposition. The thicknesses of the coatings were determined using SEM, which confirmed that the thicknesses of the deposited plasma‐polymer films could be precisely controlled by the plasma parameters. The kinetics of plasma‐polymer film deposition were also evaluated. Contact angle measurements of different solvent droplets on the coatings were used to calculate the surface energies of the coatings. These coatings appeared to be hydrophobic and had low surface energies. X‐ray photoelectron spectroscopy (XPS) and photoacoustic Fourier‐transform infrared (PA‐FT‐IR) spectroscopy were used to investigate the detailed chemical structures of the deposited films. The optimum plasma processing conditions to achieve the desired thin plasma polymer coatings are discussed in the light of the chemistry that takes place at the interfaces. Copyright © 2004 Society of Chemical Industry     

Shortest path algorithms: A computational study with the C programming language

The main purpose of this study is to evaluate the computational efficiency of algorithms for calculating shortest paths when they are correctly coded by using the C programming language. The eight algorithms that we selected for this experiment are the most efficient, either measured in terms of worst-case bounds or marked as such from previous computational studies; they include the redistributive heap algorithm. We suggest computer implementations that use the full power of C. In particular, the network representation and the various data structures used to keep the scan eligible list may be managed by using only additions and no multiplications, while it is not possible with FORTRAN. These capabilities, unique to C, yield several interesting conclusions: one may expect to speed up a shortest path algorithm by a factor of 20%; in some cases, this factor may reach 30%. Interestingly, the level of programming difficulty required to achieve these benefits is not greater than that required by implementations using arrays.     

Computer modeling of the continuous annealing furnace

A computer program to calculate the strip temperature heated in the continuous annealing furnace was developed, using the zone method for radiative heat transfer analysis with the measured gas temperature in the furnace. Using theF _E Operator, the present study considered the effects of soot and transient species, in addition to the H₂O−CO₂ gas mixture on the gas radiative heat transfer. The predicted strip temperature distribution forF _E=1.05 represented well the measured data. The maximum difference in the heat flux transfered to the strip from the combustion gas forF _E=1.0 (without soot and transient species gas radiation) and 1.05 (with soot and transient species gas radiation) was about 15%. The present study also investigated the effects of line speed and thickness variations on the strip temperature, establishing the bases for the on-line computer model.     

Fabrication of Arsenic Sulfide Optical Fiber with Low Hydrogen Impurities

Arsenic sulfide glass optical fibers typically possess extrinsic absorption bands in the infrared wavelength region associated with residual hydrogen and oxygen related impurities, despite using purified precursors. We report a purification process based on the addition of tellurium tetrachloride (TeCl₄) to the glass. During melting, the chlorine from TeCl₄ reacts with the hydrogen impurities to produce volatile products (e.g., HCl) that can be removed by subsequent dynamic distillation. The processing conditions have been modified accordingly to produce optical fibers with significantly reduced loss due to hydrogen sulfide impurity content (1.5 dB/m).     

Double melting behavior of cyclic tris(ethylene terephthalate)

Summary Cyclic tris(ethylene terephthalate) (CTET) was separated from oligomeric extract of poly(ethylene terephthalate) by the conventional solvent separation method. The structure of CTET was characterized by differential scanning calorimetry, X-ray diffraction, and scanning electron microscopy. It is shown that the double melting behavior of meltcrystallized CTET is attributed to the morphological change created by heat-treatment. The effect of the morphological change on the crystal structure of CTET was also examined.