MOSFET亚阈特性分析与低温按比例缩小理论的研究

器件尺寸按比例缩小是实现超大规模集成电路的有效途径，但寄生和二级效应却将器件限在一定的水平，本文在对比分析常温与低温下小尺寸器件效应的基础上，重点研究了ＭＯＳ器件亚阈特性对器件性能及按比例缩小的影响，并根据低温工作的特点，提出了ＭＯＳ器件一种低温按比例缩小规则，该原则对低温器的优化设计，从而更大程度在提高电路与系统性能具有重要的指导意义。     

1477 nm LD泵浦掺铒光纤放大器的研究

报道了采用１４７７ｎｍ激光二极管（ＬＤ）泵浦的掺铒光纤放大器的实验结果。研究了放大器的增益和时域特性。对１５２０ｎｍ的信号光，获得了２３ｄＢ的增益，泵浦效率为２．２８ｄＢ／ｍＷ。低频脉冲信号经过放大器后未发生波形畸变。     

用单片机控制的安全报警器的设计

文中简要地介绍了一个具有分散采集信号，集中报警的安全报警器的设计，作者利用单片机的优点和功能，成功地设计了复盖地域大，既简单又灵活的报警器。     

Nd：碲酸盐玻璃的光谱和激光性质

对比了各种激光玻璃的光谱性质，指出碲酸盐玻璃是一咱理想的激光介质，并资产在室温下实现了钛宝石激光器泵浦了Ｎｄ：碲酸盐块体玻璃的激光发射，激光阈值４．２０ｍＪ，斜率效率１４．７％。     

NUMERICAL SIMULATION OF STRATIFIED FLOW WITH BOTH VERTICAL TEMPERATURE GRADIENT AND VERTICAL SALINITY GRADIENT

Density stratified flow with both the vertical temperature gradient and the verti-cal salinity gradient is simulated numerically, in which turbulent terms are calculated by a sim-plified turbulence stress/flux algebraic model. The feature of stratification and turbulence is de-scribed correctly by the model. The computational results agree well with the experimental data.However, the k-e turbulence model is not so successful.     

RH-KTB耐材长寿技术研究及应用

介绍了宝钢RH-KTB工艺条件下RH用镁铬砖的应用和提高浸渍管管龄、下部槽槽龄的方法.     

方盒形带凸缘件的板料形状优化设计

本文用大变形刚塑性有限元模拟正方形板料在方冲头拉延下的凸缘变形过程，并以所获得的工件形状与金属流动方向为依据，对初始板料形状进行修正。对修正后的坯料形状进行二次模拟，获得了与给定凸缘形状基本吻合的拉延件形状。文中对不同凸缘圆角对极料优化形状的影响作了计算，讨论了在保证边界轮廓位置不变的条件下网格划分的方法。     

WQ—10型煤气平焰烧嘴的半工业性试验研究

对ＷＱ－１０型煤气平焰烧嘴进行半工业性试验，得到了该烧嘴较长时间运行下的一些性能。结果表明，该烧嘴平火焰稳定，炉顶温度分布均匀，燃烧烟气中ＣＯ、ＮＯ含量达到了ＹＢ／Ｔ０６２－９４标准的要求。     

TiNi shape memory alloys prepared by normal sintering

This paper covers the use of conventional press and sinter of titanium and nickel equiatomic blends, involving transient liquid phases. A notable development has been the fabrication of homogeneous compacts from the elemental powders. Results indicate that employment of a double-stage sintering cycle is effective to sustain the geometrical integrity of the sintered sample. The TiNi alloy prepared in this manner exhibits a recovery strain of 4.6% by generating a restoring stress of 230 MPa, with a martensitic transformation point M_s of 34 °C.