Improvement in D-E Hysteresis Curve Squareness of PZT Thin Films—Effect of Oxygen Partial Pressure in High-Pressure Post-Annealing

A high-pressure annealing was applied to a post-annealing process for sol-gel derived PZT thin films. The squareness of D-E hysteresis curves changes depending on both total pressure and oxygen concentration. Moreover, the change follows the product of the total pressure and the oxygen concentration, which correspond to oxygen partial pressure P_O2. Where the P_O2 is higher than 0.03 MPa, few of the squareness of the hysteresis curve are excellent. The squareness of the hysteresis curves dramatically improve as the P_O2 decreases. Where the P_O2 is lower than 0.01 MPa, the squareness deteriorates slightly. These changes in the D-E hysteresis curves are thought to be explained by the generation of lead and oxygen vacancies as a function of the P_O2.     

Health-monitoring technologies for alumina-fiber-reinforced plastics

Transmitted light could detect matrix cracks that occurred in the early stages of fracture of alumina-fiber-reinforced plastics (alumina-FRPs); these cracks could not be detected by acoustic emission (AE). An optical-fiber Bragg grating (FBG) sensor could detect the matrix cracks but it must be embedded in the FRPs. To determine which wavelength is sensitive to the defects in the FRP, the spectra of the transmitted and reflected light were measured. The intensity of the transmitted light, especially in the visible region (wavelength: 400–800 nm), decreased as the bending stiffness of the test piece decreased. It is thus concluded that to monitor the decrease in bending stiffness of FRPs, a simple sensor using a visible ray is good enough. And this transmitted-light NDE technique can work in the strong electromagentic field associated with a superconductor. It will therefore be useful for detecting defects in the FRP of the load-support system in service.     

Novel fabrication of nano-pattern with optical function by selective doping of dye vapor into novolac resin

We report selective doping of vapor of yellow dye, ferrocenedimethanol into exposed (UV-irradiated) areas of novolac resin films. When vapor of the dye was contacted with micro-patterned resin films containing both exposed and unexposed areas, the dye was doped only into the exposed areas, resulting in fabrication of micro-pattern containing the dye. On the contrary, ferrocene and other ferrocene derivatives were doped both exposed and unexposed areas of the resin. A contact angle measurement of aqueous drops on each dye indicated that the chemical affinity between hydroxyl groups of ferrocenedimethanol and exposed areas of the novolac resin will enhance selective doping of the dye into the exposed areas.     

Fabrication of 0.95Sn−0.05Au solder micro-bumps for flip-chip bonding

This letter describes the successful fabrication of a 0.95Sn−0.05Au solder microbump on a compound semiconductor wafer by reflowing of multi-layer metal film. Since the inherent interdiffusion in Au−Sn phases results in the alloying of multi-layer films, the composition of micro-bump is well controlled by the thickness of constituent metal films. The micro-bumps melt at about 220 C, which is close to the lowest eutectic temperature in a Au−Sn system. Solder bonding using 0.95Sn−0.05Au micro-bump is a very useful technique for the flipchip bonding of compound semiconductor devices.     

Repeatedly foldable AMOLED display

In this study, a 5.9‐inch foldable active‐matrix organic light emitting diode (AMOLED) display was developed. A folding test was performed repeatedly. The display survived the folding test (100,000 folds) with a curvature radius of 2 mm. To protect an organic light emitting diode (OLED) against moisture, inorganic passivation layers are provided on the upper and lower sides of the flexible display. Using our transfer technology, high density passivation layers can be obtained. The measured water vapor transmission rate of the layer is 7 × 10^?6 g/m²?day or less, which improves OLED reliability. With these techniques, we have developed a book‐type display, which is repeatedly foldable like a book, and a tri‐fold display including a display area, which is foldable in three.     

A 10-s doping technology for the application of low-temperaturepolysilicon TFTs to giant microelectronics

A bucket-type high-density (0.25-1.2-mA/cm²) low-energy (500-2000 V) ion source was utilized for high-speed phosphorus doping directly into a thin polysilicon layer without cap SiO₂. Doping gas with He dilution was selected to reduce etching of polysilicon film. Excimer laser (XeCl, 8 mm×8 mm) pulse annealing was introduced to activate effectively the doped impurity. The combination of these techniques provided a practically low sheet resistance for the TFT source, drain, and gate with a short time doping. The low-temperature polysilicon TFT fabricated with a doping time of 10 s had characteristics comparable to those of that fabricated by a longer time doping or conventional ion implantation, showing the practicality of this technology and its promise for giant microelectronics     

Investigation of transient response motion of differential planetary gear train during reverse rotation and starting by using high-speed camera monitoring

Forschung im Ingenieurwesen - Planetary gear trains (PGTs) have been used in various applications, including hybrid and electric vehicles, owing to their advantages such as compactness, light...     

Grating-coupled surface plasmon enhanced short-circuit current in organic thin-film photovoltaic cells

In this study, we demonstrate the fabrication of grating-coupled surface plasmon resonance (SPR) enhanced organic thin-film photovoltaic cells and their improved photocurrent properties. The cell consists of a grating substrate/silver/P3HT:PCBM/PEDOT:PSS structure. Blu-ray disk recordable substrates are used as the diffraction grating substrates on which silver films are deposited by vacuum evaporation. P3HT:PCBM films are spin-coated on silver/grating substrates. Low conductivity PEDOT:PSS/PDADMAC layer-by-layer ultrathin films deposited on P3HT:PCBM films act as the hole transport layer, whereas high conductivity PEDOT:PSS films deposited by spin-coating act as the anode. SPR excitations are observed in the fabricated cells upon irradiation with white light. Up to a 2-fold increase in the short-circuit photocurrent is observed when the surface plasmon (SP) is excited on the silver gratings as compared to that without SP excitation. The finite-difference time-domain simulation indicates that the electric field in the P3HT:PCBM layer can be increased using the grating-coupled SP technique.     

Cytoskeletal architecture of neuromuscular junction: Localization of vinculin

Cytoskeletons underneath the postsynaptic membrane of neuromuscular junctions were studied by using a quick-freeze deep-etched method and immunoelectron microscopy of ultrathin frozen sections. In a quick-freeze deep-etched replica of fresh, unfixed muscles, 8.9 ± 1.5-nm particles were present on the true postsynaptic membrane surface. Underneath this receptor-rich postsynaptic membrane, networks of fine filaments were observed. These cytoskeletal networks were more clearly observed in extracted samples. In these samples, diameters of the filaments which formed networks were measured. In the platinum replica, three kinds of filament were recognized—12 nm, 9 nm, and 7 nm in diameter. The 12-nm filament seemed to correspond to the intermediate filament. The other two filaments formed meshworks between intermediate filaments and plasma membrane. In ultrathin frozen sections vinculin label was localized just beneath the plasma membrane. Thirty-six percent of the label was within 18 nm from the cytoplasmic side of the plasma membrane and 50% was within 30 nm. Taking the size of the vinculin molecule into account, it was concluded that vinculin is localized just beneath the plasma membrane and might play some role in anchoring filaments which formed meshworks underneath the plasma membrane.     

Dendrite growth processes of silicon and germanium from highly undercooled melts

The crystal growth behavior of a semiconductor from a very highly undercooled melt is expected to be different from that of a metal. In the present experiment, highly pure undoped Si and Ge were undercooled by an electromagnetic levitation method, and their crystal growth velocities (V) were measured as a function of undercooling (ΔT). The value of V increased with ΔT, and V=26 m/s was observed at ΔT=260 K for Si. This result corresponds well with the predicted value based on the dendrite growth theory. The growth behaviors of Si and Ge were found to be thermally controlled in the measured range of undercooling. The microstructures of samples solidified from undercooled liquid were investigated, and the amount of dendrites immediately after recalescence increased with undercooling. The dendrite growth was also observed by a high-speed camera.