Comprehensive heat exchange model for a semiconductor laser diode

By measuring the total energy flow from an optical device, we can develop new design strategies for thermal stabilization. Here we present a comprehensive model for heat exchange between a semiconductor laser diode and its environment that includes the mechanisms of conduction, convection, and radiation. We perform quantitative measurements of these processes for several devices, deriving parameters such as a laser's heat transfer coefficient, and then demonstrate the feasibility of thermal probing for the nondestructive wafer-scale characterization of optical devices.     

Understanding silica-supported metal catalysts: Pd/silica as a case study

Supported metal catalysts, particularly noble metals supported on SiO₂, have attracted considerable attention due to the importance of the silica–metal interface in heterogeneous catalysis and in electronic device fabrication. Several important issues, e.g., the stability of the metal–oxide interface at working temperatures and pressures, are not well-understood. In this review, the present status of our understanding of the metal–silica interface is reviewed. Recent results of model studies in our laboratories on Pd/SiO₂/Mo(1 1 2) using LEED, AES and STM are reported. In this work, epitaxial, ultrathin, well-ordered SiO₂ films were grown on a Mo(1 1 2) substrate to circumvent complications that frequently arise from the silica–silicon interface present in silica thin films grown on silicon.     

Metalorganic chemical vapor deposition of silver thin films for future interconnects by direct liquid injection system

Deposition of Ag films by direct liquid injection-metal organic chemical vapor deposition (DLI-MOCVD) was chosen because this preparation method allows precise control of precursor flow and prevents early decomposition of the precursor as compared to the bubbler-delivery. Silver(I)-2,2-dimethyl-6,6,7,7,8,8,8-heptafluoro-3,5-octanedionato-triethylphosphine [Ag(fod)(PEt₃)] as the precursor for Ag CVD was studied, which is liquid at 30 °C. Ag films were grown on different substrates of SiO₂/Si and TiN/Si. Argon and nitrogen/hydrogen carrier gas was used in a cold wall reactor at a pressure of 50–500 Pa with deposition temperature ranging between 220 °C and 350 °C. Ag films deposited on a TiN/Si diffusion barrier layer have favorable properties over films deposited on SiO₂/Si substrate. At lower temperature (220 °C), film growth is essentially reaction-limited on SiO₂ substrate. Significant dependence of the surface morphology on the deposition conditions exists in our experiments. According to XPS analysis pure Ag films are deposited by DLI-MOCVD at 250 °C by using argon as carrier gas.     

State of polarization changes: Classification and measurement

We propose a standardization procedure that provides a convenient, quantitative and reproducible laboratory-based method for measuring the state of polarization (SOP) fluctuations produced by polarization varying devices. This method is based on the SOP distributions generated by commercial polarization scramblers. We show that these devices generate distributions of the maximum change of the SOP (in a given sample time) that follow Rayleigh statistics, which scale linearly with scrambling frequency and the sample time. We use this procedure to measure the SOP fluctuations in a short length of coiled fiber subject to mechanical perturbations.     

A Digital Deformation Vacuum Gauge with an LC-Generator

The design of a sylphon bellows sensor and the basic circuits of an LC-generator and of a microprocessor unit are presented. An analytical pressure–frequency conversion function and a special method of adjusting the sensor ensure an error of less than 0.05%. The dynamic range is up to 10⁵. The instruments developed cover the ranges 10³, 10⁴, and 10⁵ Pa.     

Effect of film thickness on hydrogen content in a-Si : H

The hydrogen content, its depth distribution, and its bonding configuration have been studied in hydrogenated amorphous silicon prepared by plasma-enhanced chemical vapor deposition with hydrogen-diluted silane. Nuclear reaction analysis and infrared spectroscopy were used to determine the total amount of hydrogen and its bonded component, respectively. It has been established that the total concentration of hydrogen does not depend on the film thickness, and has a uniform depth profile. The concentration of bonded hydrogen changes with the film thickness within the measurement accuracy. The data obtained suggest the presence of molecular (non-bonded) hydrogen, uniformly distributed in concentration across the film thickness.     

Lateral ion implant straggle and mask proximity effect

Lateral scattering of retrograde well implants is shown to have an effect on the threshold voltage of nearby devices. The threshold voltage of both NMOSFETs and PMOSFETs increases in magnitude for conventional retrograde wells, but for triple-well isolated NMOSFETs the threshold voltage decreases for narrow devices near the edge of the well. Electrical data, SIMS, and SUPREM4 simulations are shown that elucidate the phenomenon.     

Unified Systolic-Like Architecture for DCT and DST Using Distributed Arithmetic

A common computing-core representation of the discrete cosine transform and discrete sine transform is derived and a reduced-complexity algorithm is developed for computation of the proposed computing-core. A parallel architecture based on the principle of distributed arithmetic is designed further for the computation of these transforms using the common-core algorithm. The proposed scheme not only leads to a systolic-like regular and modular hardware for computing these transforms, but also offers significant improvement in area-time efficiency over the existing structures. The structure proposed here is devoid of complicated input/output mapping and does not involve any complex control. Unlike the convolution-based structures, it does not restrict the transform length to be a prime or multiple of prime and can be utilized as a reusable core for cost-effective, memory-efficient, high-throughput implementation of either of these transforms     

A New Hand-Held Microsystem Architecture for Biological Analysis

This paper presents a hand-held microsystem based on new fully integrated magnetoresistive biochips for biomolecular recognition (DNA hybridization, antibody antigen interaction, etc.). Magnetoresistive chip surfaces are chemically treated, enabling the immobilization of probe biomolecules such as DNA or antibodies. Fluid handling is also integrated in the biochip. The proposed microsystem not only integrates the biochip, which is an array of 16times16 magnetoresistive sensors, but it also provides all the electronic circuitry for addressing and reading out each transducer. The proposed architecture and circuits were specifically designed for achieving a compact, programmable and portable microsystem. The microsystem also integrates a hand-held analyzer connected through a wireless channel. A prototype of the system was already developed and detection of magnetic nanoparticles was obtained. This indicates that the system may be used for magnetic label based bioassays