The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications. 相似文献
The design of coplanar waveguide (CPW)-fed bow-tie antenna for the 2.4-GHz ISM band is described. A coplanar waveguide-to-coplanar strips (CPW-to-CPS) balun is used to obtain the balanced feed line for the printed bow-tie. An analysis method based on the mixed potential integral equation method is used to characterize the input characteristics of the bow-tie antenna. The numerical results obtained are in good agreement with the experimental data. Through experiments with bow-tie antennas of various extended angles, the bow-tie antenna with a 90° extended angle exhibits the widest bandwidth in the desired frequency band which has a bandwidth of 17% for a VSWR <1.5:1 相似文献
BACKGROUND: To determine the best cutoff values of aspartate aminotransferase (AST) and alanine amino-transferase (ALT) in detecting viral hepatitis C infection among patients of continuous ambulatory peritoneal dialysis (CAPD). METHODS: 90 (44 male and 46 female) CAPD patients and 526 adult controls (266 male, 260 female) were enrolled. Serum AST and ALT were measured by an auto-analyser monthly. Serum HBsAg was examined using a RIA method and anti-HCV by an second-generation EIA method. The best cutoff values of AST and ALT for detecting viral hepatitis were obtained from the ROC (receiver-operating characteristic) curve. RESULTS: The prevalence of anti-HCV(+) was significantly higher in CAPD patients (16.7%) than in normal controls (4.9%), while that of HBsAg(+) was similar in both groups. CAPD patients had significantly lower levels of serum aminotransferases compared to normal controls. Mean AST were 23.8 IU/l in normal control and 18.8 IU/l in the CAPD patients (P < 0.001). Mean ALT were 21.9 IU/l in normal controls and 15.3 IU/l in the CAPD patients (P < 0.001). CAPD patients with HCV infection had higher serum AST and ALT levels than those without. However, HBV infection did not cause significant serum aminotransferase elevation in patients. The conventional cutoff values of AST (40 IU/l) and ALT (40 IU/l) for detecting viral hepatitis yielded only a sensitivity of 27.3 and 18.2% respectively; on the contrary, our revised cutoff values of AST (24 IU/l) and ALT (17 IU/l) had better sensitivities (AST, 72.7%; ALT, 63.6%). For serial aminotransferase values, the sensitivity of AST and ALT for detecting HCV were 36.4 and 27.3% by conventional criteria, and were both 81.8%, by our newly revised criteria. CONCLUSIONS: Serum aminotransferase cutoff values should be modified for screening viral hepatitis in a CAPD population. Our new cutoff criteria had important clinical implications in providing benefits of earlier detection and possible prevention from chronic hepatic deteriorations. 相似文献
TiO2 nanotubes can be prepared in gram quantities by treating anatase TiO2 powder with concentrated NaOH solution. These TiO2 nanotubes acquired strong acidity after being impregnated with sulfuric acid solution and calcined at 300 °C. The anatase TiO2 powder used to prepare the nanotube did not catalyze the esterification between cyclohexanol and acetic acid, while sulfated TiO2 nanotubes were very reactive toward the esterification reaction. 相似文献
Using the concept of loss compensation, novel broad-band monolithic microwave integrated circuits (MMICs), including an amplifier and an analog multiplier/mixer, with LC ladder matching networks in a commercial 0.35-mum SiGe BiCMOS technology are demonstrated for the first time. An HBT two-stage cascade single-stage distributed amplifier (2-CSSDA) using the modified loss-compensation technique is presented. It demonstrates a small-signal gain of better than 15 dB from dc to 28 GHz (gain-bandwidth product=157 GHz) with a low power consumption of 48 mW and a miniature chip size of 0.63 mm2 including testing pads. The gain-bandwidth product of the modified loss-compensated CSSDA is improved approximately 68% compared with the conventional attenuation-compensation technique. The wide-band amplifier achieves a high gain-bandwidth product with the lowest power consumption and smallest chip size. The broad-band mixer designed using a Gilbert cell with the modified loss-compensation technique achieves a measured power conversion gain of 19 dB with a 3-dB bandwidth from 0.1 to 23 GHz, which is the highest gain-bandwidth product of operation among previously reported MMIC mixers. As an analog multiplier, the measured sensitivity is better than 3000 V/W from 0.1 to 25 GHz, and the measured low-frequency noise floor and corner frequency can be estimated to be 20 nV/sqrt(Hz) and 1.2 kHz, respectively. The mixer performance represents state-of-the-art result of the MMIC broad-band mixers using commercial silicon-based technologies 相似文献
A newly developed membrane performance enhancer (MPE) was used to prevent membrane fouling in a membrane bioreactor (MBR) process. It transpired that 1,000 mg/l of MPE reduced polysaccharide levels from 41 mg/I to 21 mg/I on average under the experimental condition. Repeated experiments also confirmed that 50-1,000 mg/l of MPE could reduce membrane fouling significantly and increase the intervals between membrane cleanings. Depending on MPE dosages and experimental conditions, trans-membrane pressure (TMP) increase was suppressed for 20-30 days, while baseline TMP surged within a few days. In addition, MPE allowed MBR operation even at 50,000 mg/l of total solid and reduced permeate COD. However, no evidence of toxicity for sludge was found from respiratory works. 相似文献
Polycylic aromatic hydrocarbons (PAHs) are listed as carcinogenic and mutagenic priority pollutants, belonging to the environmental endocrine disrupters. Most PAHs in the environment stem from the atmospheric deposition and diesel emission. Consequently, the elimination of PAHs in the off-gases is one of the priority and emerging challenges. Catalytic oxidation has been widely used in the destruction of organic compounds due to its high efficiency (or conversion of reactants), its economic benefits and good applicability.
This study investigates the application of the catalytic oxidation using Pt/γ-Al2O3 catalysts to decompose PAHs and taking naphthalene (the simplest and least toxic PAH) as a target compound. It studies the relationships between conversion, operating parameters and relevant factors such as treatment temperatures, catalyst sizes and space velocities. Also, a related reaction kinetic expression is proposed to provide a simplified expression of the relevant kinetic parameters.
The results indicate that the Pt/γ-Al2O3 catalyst used accelerates the reaction rate of the decomposition of naphthalene and decreases the reaction temperature. A high conversion (over 95%) can be achieved at a moderate reaction temperature of 480 K and space velocity below 35,000 h−1. Non-catalytic (thermal) oxidation achieves the same conversion at a temperature beyond 1000 K. The results also indicate that Rideal–Eley mechanism and Arrhenius equation can be reasonably applied to describe the data by using the pseudo-first-order reaction kinetic equation with activation energy of 149.97 kJ/mol and frequency factor equal to 3.26 × 1017 s−1. 相似文献
Rollback-dependency trackability (RDT) is a property stating that all rollback dependencies between local checkpoints are online trackable by using a transitive dependency vector. The most crucial RDT characterizations introduced in the literature can be represented as certain types of RDT-PXCM-paths. Here, let the U-path and V-path be any two types of RDT-PXCM-paths. We investigate several properties of communication-induced checkpointing protocols that ensure the RDT property. First, we prove that if an online RDT protocol encounters a U-path at a point of a checkpoint and communication pattern associated with a distributed computation, it also encounters a V-path there. Moreover, if this encountered U-path is invisibly doubled, the corresponding encountered V-path is invisibly doubled as well. Therefore, we can conclude that breaking all invisibly doubled U-paths is equivalent to breaking all invisibly doubled V-paths for an online RDT protocol. Next, we continue to demonstrate that a visibly doubled U-path must contain a doubled U-cycle in the causal past. These results can further deduce that some different checkpointing protocols actually have the same behavior for all possible patterns. Finally, we present a commendatory systematic technique for comparing the performance of online RDT protocols. 相似文献
The following letter presents a study regarding GaN-based light-emitting diodes (LEDs) with p-type AlGaN electron blocking layers (EBLs) of different thicknesses. The study revealed that the LEDs could endure higher electrostatic discharge (ESD) levels as the thickness of the AlGaN EBL increased. The observed improvement in the ESD endurance ability could be attributed to the fact that the thickened p-AlGaN EBL may partly fill the dislocation-related pits that occur on the surface of the InGaN-GaN multiple-quantum well (MQW) and that are due to the strain and the low-temperature-growth process. If these dislocation-related pits are not partly suppressed, they will eventually result in numerous surface pits associated with threading dislocations that intersect the InGaN-GaN (MQW), thereby reducing the ESD endurance ability. The results of the experiment show that the ESD endurance voltages could increase from 1500 to 6000 V when the thickness of the p-AlGaN EBL in the GaN LEDs is increased from 32.5 to 130 nm, while the forward voltages and light output powers remained almost the same. 相似文献