乙苯/苯乙烯塔分离效率问题的技术分析及整改措施

分析了齐鲁分公司200kt/a乙苯/苯乙烯装置乙苯/苯乙烯塔(T-401)分离效率低的原因,即降液管设计偏小,液体在降液管内流速过快,引起液体飞溅;安装分布器使用的石棉垫片溶胀而粉碎后堵塞了分布槽;分布器上使用的垫片脱落形成缝隙而漏液;填料装得不密实,留有缝隙;二级分布槽变形等.针对存在问题提出了相应的整改措施,并考察了整改措施实施效果.结果表明,整改后该塔的分离能力满足了工艺要求,并有一定的操作弹性.     

A hexane solution deposition of SnS2 films from tetrabutyltin via a solvothermal route at moderate temperature

SnS₂ films have been deposited on glass and alumina plate substrates by the reactions between an organotin precursor [tetrabuyltin, (CH₂CH₂CH₂CH₃)₄Sn] and carbon disulfide in n-hexane at the temperature range 180-200 °C for 10-40 h. The reaction system was oxygen free and applied at a moderate temperature. The films so prepared were characterized by techniques of X-ray diffraction, Scanning electron microscopy, Raman and Mössbauer spectroscopies. The films deposited on glass as well as on alumina plate have an average thickness of 30 μm, but have different rose-like morphologies, which are influenced by both the anisotropic growths of crystals and the different substrate structures. Photoluminescence measurements show that the films have an emission peak at approximately 590 nm.     

单螺杆挤出机—熔体泵串联挤出系统的性能与应用

从原理与应用方面，分析、探讨了单螺杆挤出机-熔体泵串联挤出系统的优异性能以及在塑料挤出成型领域的高效应用。     

液动旋冲接头冲击功测试方法研究

液动旋冲接头性能参数是旋冲接头设计的主要依据之一，如何对液动旋冲接头的参数进行检测是非常重要的工作。在分析和比较了测试液动旋冲接头性能参数各种方法的基础上，选择了冲击力法来进行破岩液动旋冲接头的性能参数测试，以YD系列测力传感器为检测元件，建立了一套比较完善的自动检测系统。分析了影响单次冲击功测试的因素，得出了测试旋冲接头的性能参数的影响规律。     

α-Fe_2O_3(SO_4~(2-),Sn)气敏电阻的温度响应特性

在气敏温度区域内研究了α-Fe_2O_3(SO_4~(2-),Sn)材料的电阻-温度特性,认为表面结构的变化导致温度特性出现峰值并呈现气敏性。可利用空气中电阻温度特性提供的信息改性或发现新的气敏材料。     

TEM method for rapid and precise evaluation of continuous recrystallization

With the aid of a double-tilt holder in a transmission electron microscope, a new method for a rapid and precise determination of the misorientations of a large number of subgrain or grain boundaries is given in this article. By use of the method, the continuous recrystallization can be rapidly and precisely evaluated when compared to the other conventional methods.     

Efficiency improvement of near-ultraviolet InGaN LEDs using patterned sapphire substrates

The use of conventional and patterned sapphire substrates (PSSs) to fabricate InGaN-based near-ultraviolet (410 nm) light-emitting diodes (LEDs) was demonstrated. The PSS was prepared using a periodic hole pattern (diameter: 3 /spl mu/m; spacing: 3 /spl mu/m) on the (0001) sapphire with different etching depths. From transmission-electron-microscopy and etch-pit-density studies, the PSS with an optimum pattern depth (D/sub h/=1.5 /spl mu/m) was confirmed to be an efficient way to reduce the thread dislocations in the GaN microstructure. It was found that the output power increased from 8.6 to 10.4 mW, corresponding to about 29% increases in the external quantum efficiency. However, the internal quantum efficiency (@ 20 mA) was about 36% and 38% for the conventional and PSS LEDs, respectively. The achieved improvement of the output power is not only due to the improvement of the internal quantum efficiency upon decreasing the dislocation density, but also due to the enhancement of the extraction efficiency using the PSS. Finally, better long-time reliability of the PSS LED performance was observed.     

Scattering of plane SH-waves by a cylindrical canyon of arbitrary shape in anisotropic media

The scattering and diffraction of plane SH-waves, by an arbitrary-shaped cylindrical canyon in anisotropic media is formulated here. Analytical solutions are obtained via the complex function theory, using the orthogonal property of the Hermite functions to solve the resulting set of infinite algebraic equations. Expressions for scattered displacements and scattered stresses are given. Three cross-sectional profile types are used in the numerical simulation of the two-dimensional canyon topography: (a) a semi-circular profile, (b) a semi-elliptical profile and (c) a triangular profile. The results obtained in (a) and (b) are consistent with known solutions computed by Trifunac and his co-workers [1,3] using a different method. As the exact solution for (c) is not known to exist, the result given here is believed to be new and would therefore serve as a useful check for numerical analysts working in this area.     

М.Ю.巴利新的粉末冶金理论

巴利新(原苏联)是世界知名的粉末冶金学家。1938年他提出的压制方程ln p=—AV+B仍为美国1984年出版的《金属手册》第九版第七卷‘粉末冶金’所引用。早在70年代,巴利新就根据他提出的一系列新理论,提出一个新的压制或固结方程式组α=~2z,f=F(,α),p=pαf,但除原苏联外,该方程鲜为人知。鉴于此,本文作者对巴利新60年代以来发表的一系列关于粉末冶金理论的论著进行了整理,现扼要地予以阐述,这对我国粉末冶金理论的研究或许是有益的。