Influence of the silicon surface treatment by plasma etching and scratching on the nucleation of diamond grown in HFCVD - a comparative study

A comparative study for the nucleation of diamond was carried out using surface treatment like (i) surface scratching with 1 μm diamond paste and (ii) surface etching using chlorine plasma at different RF powers (50, 100 and 150 W). Atomic force microscopic study shows variation in roughness from 31 nm to 110 nm. Scratching results in random scratches, whereas plasma etches a surface uniformly. Scanning electron microscopic observations show well faceted crystallites with a predominance of angular shaped grains corresponding to 〈100〉 and 〈110〉 crystallite surfaces for the scratched as well as plasma etched substrate. Surface etching at 150 W plasma power results in a better growth in comparison with 50 and 100 W plasma powers. Chlorine-radical is found responsible for the changes in the growth morphology. Raman spectroscopy shows a sharp peak at 1,332 cm⁻¹ and a peak at ∼1,580 cm⁻¹ for both samples.     

Sintering of an ultra pure α-alumina powder: I. Densification,grain growth and sintering path

Sintering in air of an ultra pure α-alumina powder has been investigated. Isothermal experiments have been conducted on green samples shaped by slip casting. The grain growth and densification kinetics have been established. The “relative density/grain size” trajectory, called “sintering path”, has been drawn. Hypotheses concerning the mechanisms controlling grain growth and densification have been formulated. For the first time, it is shown that grain growth and densification kinetics exhibit two distinct regimes, where an initial point defect formation step plays a key role. When point defects have been generated, the diffusion of the associated Al³⁺ cations controls grain growth and densification.     

Preface

Multibody System Dynamics -     

Data decomposition using independent component analysis with prior constraints

In many data analysis problems, it is useful to consider the data as generated from a set of unknown (latent) generators or sources. The observations we make of a system are then taken to be related to these sources through some unknown function. Furthermore, the (unknown) number of underlying latent sources may be less than the number of observations. Recent developments in independent component analysis (ICA) have shown that, in the case where the unknown function linking sources to observations is linear, such data decomposition may be achieved in a mathematically elegant manner. In this paper, we extend the general ICA paradigm to include a very flexible source model, prior constraints and conditioning on sets of intermediate variables so that ICA forms one part of a hierarchical system. We show that such an approach allows for efficient discovery of hidden representation in data and for unsupervised data partitioning.     

Radiation polymerization of acrylonitrile in a viscous system with styrene

Radiation polymerization of acrylonitrile in a viscous system with styrene was performed at ambient temperature by using γ‐rays. It is found that the overall rate of polymerization was accelerated after critical conversion due to the gel effect. As the molar fraction of styrene in monomer feed (f_St) is increased, both the total polymer conversion and molar fraction of acrylonitrile in the copolymer feed (F_AN) were decreased. The monomer reactivity ratios for acrylonitrile and styerne were determined to be r₁ (AN) = 0.25 and r₂ (St) = 2.0, respectively. The copolymers obtained were characterized by Fourier transformed infrared spectra (FTIR), X‐ray diffraction (XRD), scanning electron microscopy (SEM), ¹H‐NMR, and pyrolysis mass spectrometry (PMS). It was found that the slight addition of styrene to acrylonitrile strongly changes crystallinity, morphology, and thermal decomposition of the resulting polymer. ¹H‐NMR measurment of AN/St copolymer showed the appearance of aromatic proton signals and shifted the resonance of the methylene proton to lower chemical shifts. The mass spectra of AN/St copolymers showed fragments of pyrolysates corresponding to oligonitriles with styrene end groups. © 2002 Wiley Periodicals, Inc. J Appl Polym Sci 84: 268–275, 2002; DOI 10.1002/app.10324     

Low-temperature unit-cell parameters of La1−x Pr x CaBaCu3O7 compounds

The suppression of the superconductivity by praseodymium in La_1−x Pr _x CaBaCu₃O₇ may be explained in terms of the difference in the electronic or crystal structure between these compounds. Three compositions with x=0.0, 0.5, 1.0 were, therefore, investigated by X-ray diffraction in order to determine the unit-cell dimensions at room temperature as well as at lower temperatures down to 5 K. The results showed no considerable changes in the orthorhombic unit-cell dimensions on decreasing the temperature to 5 K. Unit-cell volumes at low temperatures were 0.99 of the room temperature values. The intensity sequence of reflections in the diffraction pattern was the same for all samples throughout the range of temperature studied.     

MC-CDMA with exponential power profile in Nakagami fading channel

A refined study of multi-carrier code division multiple access transmission over a Nakagami fading channel is proposed. The channel power is modeled with an exponential power profile rather than the uniform profile prevalent in other papers. An expression for the bit error rate (BER) is then derived. Numerical results show that MC-CDMA performances depend on the power dispersion of interferers around the desired user power.     

New mechanisms in photo-assisted MOVPE of II-VI semiconductors

The first detailed comparison has been made of the metalorganic vapor phase epitaxy growth rates of CdTe, ZnTe, and ZnSe, measured in situ with laser reflectometry. The comparison also includes the photo-assisted growth with visible radiation from an argon ion laser. Using a standard Group II precursor (DMCd or DMZn.TEN) partial pressure of 1.5 × 10⁻⁴ atm, VI/II ratio of 1 and DIPM (M = Te, Se) the maximum growth rates are in the region of 10 to 15 AU/ s. Decrease in growth rates of ZnTe at higher temperatures or higher laser powers have been attributed to the desorption from the substrate of unreacted Te precursor. The behavior of DTBSe is quite different from DIPSe for both pyrolytic and photo-assisted growth. The maximum growth rate is around 1 AU/ s with very little photo-enhancement, except at 300°C. Secondary ion mass spectroscopy analysis of hydrogen concentration in the ZnSe layers shows high concentrations, up to 5.9 × 10¹⁹ atoms cm⁻³ for DTBSe grown ZnSe under pyrolytic conditions. These results show that the growth kinetics play an important part in the incorporation of hydrogen and passivation of acceptor doped material.     

The electrical properties of post-deposition annealed and as-deposited In-doped CdTe thin films

The electrical properties of CdTe thin film have been studied and discussed, including, the conduction mechanism, and the effect of temperature and indium doping on the current passing through the CdTe film and hence on the film conductivity. It is observed that the CdTe film is of the modified Poole–Frenkel conduction mechanism and the resistivity of the film can be lowered by more than one order of magnitude due to indium doping.     

A General Reliable Quadratic Form: An Extension of Affine Arithmetic

In this article, a new extension of affine arithmetic is introduced. This technique is based on a quadratic form named general quadratic form. We focus here on the computation of reliable bounds of a function over a hypercube by using this new tool. Some properties of first quadratic functions and then polynomial ones are reported. In order to show the efficiency of such a method, ten polynomial global optimization problems are presented and solved by using an interval branch-and-bound based algorithm. The work of the first author was also supported by the Laboratoire de Mathématiques Appliquées CNRS–FRE 2570, Université de Pau et des Pays de l'Adour, France, and by the Laboratoire d'Electrotechnique et d'Electronique Industrielle CNRS–UMR5828, Group EM³, INPT–ENSEEIHT.