An error and sensitivity analysis of the atmospheric- andsoil-correcting variants of the NDVI for the MODIS-EOS

Several soil- and atmospheric-correcting variants of the normalized difference vegetation index (NDVI) have been proposed to improve the accuracy in estimating biophysical plant parameters. In this study, a sensitivity analysis, utilizing simulated model data, was conducted on the NDVI and variants by analyzing the atmospheric- and soil-perturbed responses as a continuous function of leaf area index. Percent relative error and vegetation equivalent “noise” (VEN) were calculated for soil and atmospheric influences, separately and combined. The NDVI variants included the soil-adjusted vegetation index (SAVI), the atmospherically resistant vegetation index (ARVI), the soil-adjusted and atmospherically resistant vegetation index (SARVI), the modified SAVI (MSAVI), and modified SARVI (MSARVI). Soil and atmospheric error were of similar magnitudes, but varied with the vegetation index. All new variants outperformed the NDVI. The atmospherically resistant versions minimized atmospheric noise, but enhanced soil noise, while the soil adjusted variants minimized soil noise, but remained sensitive to the atmosphere. The SARVI, which had both a soil and atmosphere calibration term, performed the best with a relative error of 10 percent and VEN of ±0.33 LAI. By contrast, the NDM had a relative error of 20 percent and VEN of ±0.97 LAI     

Suppression of boron penetration in p+ polysilicon gateP-MOSFETs using low-temperature gate-oxide N2O anneal

It has been reported that high-temperature (~1100°C) N₂ O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N₂O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO₂ interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO₂ interface is essential to effectively prevent boron diffusing into the underlying silicon substrate     

钒冶炼焙烧添加剂选择研究

对小型钒冶炼厂焙烧工艺所用添加剂进行改进的可能性进行了探讨，研究了几种常用添加剂的焙烧条件，分析比较了其性能，提出用ＮａＣｌ－Ｎａ２ＣＯ３作焙烧添加剂替代ＮａＣｌ可大幅度减少大气污染，提高冶钒转化率；且不改变工艺流程，无需设备投资，具有较好的经济效益和环境效益。     

Preparation and optical properties of CdxHg1-xTe doped silica glass

In this paper, the Cd_xHg_1-xTe (x=1-0.7) doped silica glass was prepared through two step sol-gel process and in-situ growth technique from tetraethoxysilane (TEOS), cadmium acetate, mercury acetate and telluric acid. The influence of various factors on the glass was studied. The structure of the microcrystals was investigated by XRD. The absorption and transmittance spectrum of the composite showed that the shift of absorption edge was in conformity with the quantum size effect. The third-order nonlinear optical susceptibility χ⁽³⁾ was measured by the degenerate four wave mixing (DFWM). The values of χ⁽³⁾ was in the range of 10^-11-10^-12 MO esu at wavelength of 1.06 μm.     

土钉支护结构水平位移安全监控模型研究

国内现行规范、标准是以极限变形值作为土钉支护结构水平位移安全监测报警值 ,但没有反映工程进度影响 ,不便指导工程实践。提出“过程控制”概念 ,以反正切函数为基本形式 ,基于历史经验建立“安全时程曲线”控制模型 ,要求施工过程中实测水平位移始终处在“安全时程曲线”之下 ,以确保最终变形在某一适当的阈值之内 ,已有实测结果可以为施工方案调整提供依据。通过实际案例 ,检验模型的可行性 ,表明过程控制模型较极限变形策略更具可操作性     

Application of asymptotic waveform evaluation to eigenmode expansion method for analysis of simultaneous switching noise in printed circuit boards (PCBs)

In this paper, the asymptotic waveform evaluation (AWE) technique is first applied to the conventional eigenmode expansion method for characterizing a power/ground (P/G) plane pair and analyzing the simultaneous switching noise on such plane pairs for printed circuit boards or multichip modules. The application of AWE avoids a large number of iterations in computing the impedance frequency response of a P/G plane pair structure and greatly reduces the computation time. Meanwhile, to obtain an accurate solution in an entire frequency range, we employ the complex frequency hopping technique which can help select multiple expansion points. In addition, the proposed approach can also be used to characterize the P/G plane pair structures with irregular shapes. Three examples demonstrate its high efficiency and good accuracy.     

Low RF noise and power loss for ion-implanted Si having an improved implantation process

Very-low-transmission line noise of <0.25 dB at 18 GHz and low power loss /spl les/0.6 dB at 110 GHz have been measured on transmission lines fabricated on proton-implanted Si. In contrast, a standard Si substrate gave much higher noise of 2.5 dB and worse power loss of 5 dB. The good RF integrity of proton-implanted Si results from the high isolation impedance to ground, as analyzed by an equivalent circuit model. The proton implantation is also done after forming the transmission lines at a reduced implantation energy of /spl sim/4 MeV. This enables easier process integration into current VLSI technology.     

Non‐reflecting artificial boundaries for transient scalar wave propagation in a two‐dimensional infinite homogeneous layer

This paper presents an exact non‐reflecting boundary condition for dealing with transient scalar wave propagation problems in a two‐dimensional infinite homogeneous layer. In order to model the complicated geometry and material properties in the near field, two vertical artificial boundaries are considered in the infinite layer so as to truncate the infinite domain into a finite domain. This treatment requires the appropriate boundary conditions, which are often referred to as the artificial boundary conditions, to be applied on the truncated boundaries. Since the infinite extension direction is different for these two truncated vertical boundaries, namely one extends toward x →∞ and another extends toward x→‐ ∞, the non‐reflecting boundary condition needs to be derived on these two boundaries. Applying the variable separation method to the wave equation results in a reduction in spatial variables by one. The reduced wave equation, which is a time‐dependent partial differential equation with only one spatial variable, can be further changed into a linear first‐order ordinary differential equation by using both the operator splitting method and the modal radiation function concept simultaneously. As a result, the non‐reflecting artificial boundary condition can be obtained by solving the ordinary differential equation whose stability is ensured. Some numerical examples have demonstrated that the non‐reflecting boundary condition is of high accuracy in dealing with scalar wave propagation problems in infinite and semi‐infinite media. Copyright © 2003 John Wiley & Sons, Ltd.