Drift hole mobility in strained and unstrained doped Si1-xGex alloys

Results of the drift hole mobility in strained and unstrained SiGe alloys are reported for Ge fractions varying from 0 to 30% and doping levels of 10¹⁵-10¹⁹ cm^-3. The mobilities are calculated taking into account acoustic, optical, alloy, and ionized-impurity scattering. The mobilities are then compared with experimental results for a boron doping concentration of 2×10¹⁹ cm^-3. Good agreement between experimental and theoretical values is obtained. The results show an increase in the mobility relative to that of silicon     

Efficient diode-pumped single-frequency erbium:ytterbium fiberlaser

We report a 7.6-mW single-frequency fiber laser operating at 1545 nm, using for the first time an Er³⁺:Yb³⁺ doped fiber and a fiber grating output coupler. The laser did not exhibit self-pulsation, which is a typical problem in short three-level fiber lasers, and had a relative intensity noise (RIN) level below -145.5 dB/Hz at frequencies above 10 MHz. The linewidth of the laser was limited by the relaxation oscillation sidebands in the optical spectrum and was typically less than 1 MHz     

Effect of postoperative mydriatics on the iris

PURPOSE: To assess the role postoperative mydriatics play after extracapsular cataract extraction (ECCE) and posterior chamber intraocular lens (IOL) implantation in causing iris modifications and in controlling inflammation. SETTING: Outpatients Department, Ninewells Hospital, Dundee, Scotland. METHODS: The prospective study comprised 136 patients who had standardized ECCE. Half the patients used a mydriatic for 2 weeks postoperatively. Anterior chamber activity, pain, and eye redness were evaluated at 2 weeks postoperatively; pupil shape, peripheral anterior synechias, IOL position, and iris adhesions, at 6 weeks. RESULTS: Iris-lens adhesions were significantly more common in the group using a mydriatic. There was no difference between the two groups in postoperative inflammation. CONCLUSION: Mydriatics should not be used routinely after ECCE with posterior chamber IOL implantation.     

Equations of the oscillations of a deep massive foundation flexibly restrained in the ground

A new equation is derived for the rotational oscillations of a deep massive foundation flexibly restrained in the ground. An error in the corresponding equation published in the literature is indicated. Translated from Osnovaniya, Fundamenty i Mekhanika Gruntov, No. 6, pp. 7–8, November–December, 1996.     

Impact of crosstalk in an arrayed-waveguide multiplexer onN×N optical interconnection

The impact of crosstalk in an arrayed-waveguide N×N wavelength multiplexer is investigated precisely in relation to its application to wavelength-routing N×N all optical networks. In such systems multiple crosstalk light which has the same wavelength as the signal results in signal-crosstalk beat noise. We confirm that the noise is Gaussian and obtain the relation between crosstalk and power penalty. It is shown that the crosstalk must be less than -38 dB for a 16×16 system to keep the power penalty below 1 dB at a bit error rate of 10^-9     

Sorption of vapors and gases by cellulose acetate films

Cellulose diacetate and triacetate films 6–55 µm thick with a total porosity of 0.8–2% were prepared by pouring a solution on an immobile surface and by calendering. Sorption of H₂S and CO₂ gases and acetone vapors on these films was investigated in static and dynamic conditions. It was shown that films 6–10 µm thick prepared by calendering should be used for purification of air from H₂S and CO₂ and films 15–20 µm thick prepared by pouring should be used for removal of acetone vapors.Engels Institute of Technology, Saratov State University. Translated from Khimicheskie Volokna, No. 6, pp. 44–46, November–December, 1995.     

Capacity enhancement of cellular CDMA by traffic-based control ofspeech bit rate

Variable rate speech coding is now recognized as an important system component for high-capacity cellular networks because it exploits speech statistics to reduce the average bit rate, which results in reduced interference and increased capacity. Once a variable rate capability is available, an additional capacity enhancement can be achieved by introducing network control of the user bit rate in response to changing traffic levels. We introduce the concept of network control of rate and propose a particular network-control method for code-division multiple access (CDMA) systems. Based on an M/M/∞//M queueing model applied to a cell under heavy traffic conditions and a new performance measure called averaged speech quality, we obtain simulation results to demonstrate how network control of rate can achieve improved speech quality or increased capacity for a given quality objective     

Polarization dependent gain in erbium-doped fiber amplifiers:computer model and approximate formulas

A computer model for polarization dependent gain (PDG) in Er-doped fiber amplifiers (EDFA) is presented. The model assumes that each erbium ion possesses an ellipsoidal gain surface and that all ion orientations are equally likely. By dividing the ions into subsets based upon orientation and computing the inversion of each subset in the presence of polarized pump and signal waves, the model predicts the dependence of the PDG induced by this polarization hole-burning (PHB) on the design of the EDFA, the signal degree and state of polarization (SOP), and the pump SOP. For moderate gain amplifiers (made from the same fiber) with the same gain peak wavelength and the same compression level, the magnitude of the PDG is nearly independent of the EDFA gain. Internal and random fiber birefringence are included to model real fibers. In fibers which cause the signal SOP to walk rapidly around the Poincare sphere, the PDG is reduced by a factor of 2/3 when compared with a linear polarization-maintained signal. Scrambled signals and partially-polarized saturating tones are also considered. Simple rules are derived for predicting the PDG of a given EDFA     

Modeling ion implantation of HgCdTe

Ion implantation of boron is used to create n on p photodiodes in vacancy-doped mercury cadmium telluride (MC.T). The junction is formed by Hg interstitials from the implant damage region diffusing into the MC.T and annihilating Hg vacancies. The resultant doping profile is n⁺/n^-/p, where the n⁺ region is near the surface and roughly coincides with the implant damage, the n^- region is where Hg vacancies have been annihilated revealing a residual grown-in donor, and the p region remains doped by Hg vacancy double acceptors. We have recently developed a new process modeling tool for simulating junction formation in MC.T by ion implantation. The interstitial source in the damage region is represented by stored interstitials whose distribution depends on the implant dose. These interstitials are released into the bulk at a constant, user defined rate. Once released, they diffuse away from the damage region and annihilate any Hg vacancies they encounter. In this paper, we present results of simulations using this tool and show how it can be used to quantitatively analyze the effects of variations in processing conditions, including implant dose, annealing temperature, and doping background.