Numerical simulation of ultra-compact electro-optic modulator based on nanoscale plasmon metal gap waveguides

An ultra-compact Mach-Zehnder (MZ) electro-optic (EO) modulator composed of nanoscale metal gap waveguides is numerically demonstrated. Propagation of surface plasmon polaritons in nano-size channels and their EO modulations is investigated by the finite-difference time-domain method considering the Lorentz-Drude model. The half-wave voltage (V _pi) of the resulting MZ modulator for push-pull operation is 1.73 V using the interference arm with a sub-micron length (500-nm).     

A 64-Mb DRAM with meshed power line

A 64-Mb dynamic RAM (DRAM) has been developed with a meshed power line (MPL) and a quasi-distributed sense-amplifier driver (qDSAD) scheme. It realizes high speed, t_RAS=50 ns (typical) at V_cc=3.3 V, and 16-b input/output (I/O). This MPL+qDSAD scheme can reduce sensing delay caused by the metal layer resistance. Furthermore, to suppress crosstalk noise, a V_SS shield peripheral layout scheme has been introduced, which also widens power line widths. This 64-Mb DRAM was fabricated with 0.4-μm CMOS technology using KrF excimer laser lithography. A newly developed memory cell structure, the tunnel-shaped stacked-capacitor cell (TSSC), was adapted to this 64-Mb DRAM     

Design considerations of all-optical A/D conversion: nonlinear fiber-optic Sagnac-loop interferometer-based optical quantizing and coding

The authors describe in detail the design considerations of our previously proposed novel optical quantizing and coding method for all-optical analog-to-digital (A/D) conversion using nonlinear optical switches based on the Sagnac interferometer. The multiperiod transfer function, which is the key to quantizing and coding, is achieved through a careful design of the Sagnac interferometer. In the experiments, the intensity of the pulse train input to our A/D converter is manually changed, and the corresponding digital signals are successfully mapped generated. Although the input-pulse trains are not the sampling of real analog signal, the principle of our proposed 3-bit A/D conversion at a 10 gigasample per second (Gsps) rate is demonstrated. The proposed optical quantizing and coding, combined with existing optical sampling techniques, will enable ultrafast photonic A/D conversion without electronics. The potential in the frequency regime of over a few hundred gigasamples per second was investigated by using an optical switch that utilizes the optical Kerr effect for fast operation. It was found out that the wavelength allocations and temporal widths of control and probe pulses have to be optimized with respect to the group-velocity dispersion of highly nonlinear fiber.     

A New Approach to Suppress the Effect of Machining Error for Waveguide Septum Circular Polarizer at 230 GHz Band in Radio Astronomy

A new stepped septum-type waveguide circular polarizer (SST-CP) was developed to operate in the 230 GHz band for radio astronomy, especially submillimeter-band VLBI observations. For previously reported SST-CP models, the 230 GHz band is too high to achieve the design characteristics in manufactured devices because of unexpected machining errors. To realize a functional SST-CP that can operate in the submillimeter band, a new method was developed, in which the division surface is shifted from the top step of the septum to the second step from the top, and we simulated the expected machining error. The SST-CP using this method can compensate for specified machining errors and suppress serious deterioration. To verify the proposed method, several test pieces were manufactured, and their characteristics were measured using a VNA. These results indicated that the insertion losses were approximately 0.75 dB, and the input return losses and the crosstalk of the left- and right-hand circular polarization were greater than 20 dB at 220–245 GHz on 300 K. Moreover, a 230 GHz SST-CP was developed by the proposed method and installed in a 1.85-m radio telescope receiver systems, and then had used for scientific observations during one observation season without any problems. These achievements demonstrate the successful development of a 230 GHz SST-CP for radio astronomical observations. Furthermore, the proposed method can be applicable for observations in higher frequency bands, such as 345 GHz.     

PZT MIM capacitor with oxygen-doped Ru-electrodes for embedded FeRAM devices

An add-on-type, Pb(Zr,Ti)O/sub 3/ (PZT) metal-insulator- (MIM) capacitor on Al multilevel interconnects is developed for embedded FeRAM devices, concluding that the oxygen-doping into the ruthenium (Ru) electrodes is crucial for obtaining large remnant polarization under a limited process temperature below 450/spl deg/C. The oxygen-doped, Ru bottom-electrode with a granular structure reduces the PZT sputtering temperature below 450/spl deg/C to obtain the ferroelectric perovskite-phase. On the other hand, oxygen doping into the Ru top-electrode suppresses the reductive damage at the interface between the top-electrode and the PZT, keeping the leakage current low. The PZT MIM capacitor with these oxygen-doped, Ru electrodes exhibits the remnant polarization of 21 /spl mu/C/cm/sup 2/ on the Al multilevel interconnects with no degradation of the interconnect reliability, thus applicable to the embedded FeRAM in 0.25 /spl mu/m-CMOS logic LSIs.     

Electrical Properties of Isotropic Conductive Adhesives Composed of Silicone-Based Elastomer Binders Containing Ag Particles

The electrical properties of isotropic conductive adhesives (ICAs) with two different types of silicone-based binder containing Ag particles were examined. The ICAs were printed on glass substrates in order to prepare specimens for evaluating the electrical properties. In the case of adhesives containing a denatured silicone binder, both the curing and cooling steps in the isothermal curing process generated electrical conductivity. Adhesives that were cured at 120°C to 200°C exhibited similar values of electrical resistivity regardless of the different curing temperatures. By contrast, electrical conductivity was generated only during the cooling step when adhesives containing a dimethyl methylvinyl siloxane were isothermally cured. In this case, adhesives cured above 160°C exhibited high electrical resistivity. In evaluating the temperature dependence of the electrical resistivity, we found physical annealing to have significantly different effects on these specimens. In addition, we were able to make small sensitive variations in the properties of silicone-based ICAs by controlling the isothermal annealing and thermal cycling processes.     

Ecodesigns and applications for noble metal nanoparticles by ultrasound process

Ecodesigns for nano-sized noble metal particles were investigated by a new liquid-solid (metal oxide-alcohol) system. We have reduced noble metal oxides as low-emission starting materials by ultrasound and tried to fabricate various noble metal nanoparticles (Ag, Au, Pt, Pd) at room temperature, Noble metal oxides were investigated during decomposition. These reductions are ecologically clean, because many noble metal oxides are not toxic, and during decomposition, O/sub 2/ is evolved. By choosing suitable conditions, it is reasonable to expect that this simple sonochemical process can be extended to obtain nano-sized metal particles.     

CAD-compatible high-speed CMOS/SIMOX gate array using field-shieldisolation

A specific 0.5 μm CMOS/SIMOX technology was developed for a gate array/sea of gate (SOG) using field-shield (FS) isolation to overcome a pending problem of source-to-drain breakdown voltage (BV_ds) lowering. FS isolation is capable of improving BV_ds because surplus holes generated by impact ionization at the drain region are collected through the body region under the FS gate. BV_ds was maintained at a level of junction breakdown before reaching the punchthrough limitation at a gate length of around 0.3 μm using the FS isolation. The FS isolation technique was successfully applied to an SOG gate array on a SIMOX substrate. The gate array has the same area as that on the bulk-Si and is compatible to a conventional bulk-Si CAD system because the layout is basically the same. A 53-stage ring oscillator fabricated on the FS isolated SOG gate array exhibited 1.7 times higher speed operation than that on a bulk-Si counterpart, keeping low power consumption characteristics up to a drain voltage of 3 V     

Robust porous SiOCH/Cu interconnects with ultrathin sidewall protection liners

Robust porous low-k/Cu interconnects have been developed for 65-nm-node ultralarge-scale integrations (ULSIs) with 180-nm/200-nm pitched lines and 100-nm diameter vias in a single damascene architecture. A porous plasma-enhanced chemical vapor deposition (PECVD)-SiOCH film (k=2.6) with subnanometer pores is introduced into the intermetal dielectrics on the interlayer dielectrics of a rigid PECVD-SiOCH film (k=2.9). This porous-on-rigid hybrid SiOCH structure achieves a 35% reduction in interline capacitance per grid in the 65-nm-node interconnect compared to that in a 90-nm-node interconnect with a fully rigid SiOCH. A via resistance of 9.7 /spl Omega/ was obtained in 100-nm diameter vias. Interconnect reliability, such as electromigration, and stress-induced voiding were retained with interface modification technologies. One of the key breakthroughs was a special liner technique to maintain dielectric reliability between the narrow-pitched lines. The porous surface on the trench-etched sidewall was covered with an ultrathin plasma-polymerized benzocyclobuten liner (k=2.7), thus enhancing interline time-dependent dielectric breakdown reliability. The introduction of a porous material and the control of the sidewall are essential for 65-nm-node and beyond scaled-down ULSIs to ensure high levels of reliability.