Monolithic SiGe Up‐/Down‐Conversion Mixers with Active Baluns

The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on‐chip 1 to 6 GHz up‐conversion and 1 to 8 GHz down‐conversion mixers using a 0.8 µm SiGe hetero‐junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up‐conversion mixer was implemented on‐chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up‐conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down‐conversion mixer was implemented on‐chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down‐conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz.     

无抗性选择标记的植酸酶基因转化DNA的构建

构建了无抗性选择标记植酸酶基因的转化片段DNAphyAⅡ。两侧设置了高等植物基因组DNA保守序列CAATbox，TATAbox和polyA的DNA片段（DNAphyAⅡ，5‘-CAATbox-TATAbox-CaMV35S-phyA Ⅱ-GUS-Nos-Tem-polyA-3‘)，为提高转化率奠定了分子基础，此外DNAphyAⅡ中植酸酶蛋白编码基因phyA Ⅱ前后的启动子和终止子序列，确保了phyA Ⅱ会得以正确表达。     

移动消息类业务的发展演进趋势分析

随着国内外SMS业务的巨大成功，移动消息类业务的市场潜力初步显露，并逐步呈现了SMS与EMS、UMS、MMS、IM等多种不同标准的消息类业务互相竞争的局面。通过对移动消息业业务发展历史的回顾，在对SMS的成功要素与UMS、MMS业务对比分析基础上，探讨了移动消息类业务发展演进趋势。     

Dynamic Survivability in WDM Mesh Networks Under Dynamic Traffic

Network survivability is a crucial requirement in WDM mesh networks. In this paper, we systematically consider the problem of dynamic survivability with dynamic single link failure in WDM networks under dynamic traffic demands. Specifically, we investigate various protection schemes, such as dedicated path protection (DPP), shared path protection (SPP), dedicated link protection (DLP), shared link protection (SLP), and two restoration schemes, path restoration (PR) and link restoration (LR). Moreover, two new shared protection methods are proposed, i.e., SRLG-based shared link protection (SRLG-SLP) and SRLG-based shared path protection (SRLG-SPP). The SRLG (shared risk link group) constraint defines the availability of protection resources to a working path, which requires that any two working paths sharing the same risk of failure (or in the same SRLG) cannot share the same protection resources. Furthermore, in our study, we consider a more practical dynamic single-link failure model, in which the link-failure-interarrival time and link-failure-holding time are considered as two independent parameters. Based on this link-failure model, extensive simulations are done to analyze and compare the dynamic survivable performance of various protection and restoration schemes. Resource utilization, protection efficiency, restoration efficiency, and service disruption ratio are employed as survivable performance metrics versus traffic load, link-failure frequency, and link-failure reparation time to evaluate the survivable performance. Many meaningful results are given. In addition, we show that the developed SRLG-SLP and SRLG-SPP protection schemes perform very well in terms of protection efficiency and service disruption ratio, while sacrificing some performance in terms of resource utilization.     

P-channel Ge/Si Hetero-nanocrystal Based MOSFET Memory

The charge storage characteristics of P-channel Ge/Si hetero-nanocrystal based MOSFET memory has been investigated and a logical array has been constructed using this memory cell. In the case of the thickness of tunneling oxide T_ox=2nm and the dimensions of Si- and Ge-nanocrystal D_Si=D_Ge=5nm, the retention time of this device can reach ten years(~1×10~8s) while the programming and erasing time achieve the orders of microsecond and millisecond at the control gate voltage |V_g|=3V with respect to N-wells, respectively. Therefore, this novel device, as an excellent nonvolatile memory operating at room temperature, is desired to obtain application in future VLSI.     

东营凹陷古近系烃源岩超压特征及分布规律

统计分析1307口探井实测压力系数和83l口探井使用的钻井液密度数据，发现东营凹陷古近系沙三段、沙四段普遍存在异常超压，超压(压力系数1．1-1．5)主要出现在2100-3500m深度，强超压(压力系数大于1．5)主要出现在2800-3500m深度。东营凹陷沙三段、沙四段主力烃源岩超压平面分布具有北高南低、东高西低的总体特点，超压主要分布在洼陷带、断裂构造带和中央背斜带上。烃源岩压力系数等值线北部陡坡带比较密集，南部缓坡带相对稀疏。生油洼陷中心附近异常高压带的分布与生油洼陷基本一致，洼陷深陷区压力系数很大，向周围斜坡和构造高部位呈辐射状逐渐减小至正常，压力分布带与洼陷、边缘斜坡和构造较高部位的欠压实与压实带发育、分布规律的一致性很好。图3表l参9     

纤维防漏增韧水泥浆应用研究

在室内进行纤维水泥防漏实验研究和纤维水泥增强增韧实验研究的基础上,进行了纤维防漏增韧水泥浆应用研究。试验中选择了低弹矿物纤维ZRF,该纤维分子链中含部分亲水基团,在一定范围较易分散,可以杂乱地分布于水泥浆中,使水泥硬化后具有显著的抗冲击性,射孔试验结果证实了纤维的这种作用。地面模拟实验结果和现场固井应用试验说明,防漏增韧水泥浆体系能够满足现场固井施工要求,既能提高水泥石韧性,又具有防漏功能,同时解决了固井过程中的水泥浆漏失和水泥石脆性的难题,有利于提高固井质量,延长油气井寿命。