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11.
A potential barrier model along the grain boundaries in ultrathin tin dioxide (SnO2) gas sensors is presented. It is assumed that the negatively charged oxygens are adsorbed only on the grain boundaries. The potential barrier depth is expressed as functions of grain size, donor concentration and surface coverage of adsorbed oxygen ions at the boundaries. A direct consequence is that the conduction electrons are effectively confined in a grain when the film thickness becomes smaller than a critical value. This indicates a drastic increase in resistivity with decreasing film thickness in air, and thus an occurrence of an extremely high gas sensitivity.  相似文献   
12.
This 512 Kw×8 b×3 way synchronous BiCMOS SRAM uses a 2-stage wave-pipeline scheme, a PLL self-timing generator and a 0.4-μm BiCMOS process to achieve 220 MHz fully-random read/write operations with a GTL I/O interface. Newly developed circuit technologies include: 1) a zig-zag double word-line scheme, 2) a centered bit-line load layout scheme, and 3) a phase-locked-loop (PLL) with a multistage-tapped ring oscillator which generates a clock cycle proportional pulse (CCPP) and a clock edge lookahead pulse (CELP)  相似文献   
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The structural change of diamond induced by hydrogen plasma exposure at room temperature, and its thermal stability, were investigated using electron spin resonance (ESR), X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) techniques. ESR observation revealed that it gave rise to a highly defective structure (spin concentration of 1020 cm− 3), which is very similar to the structure of hydrogenated amorphous carbon (a-C : H) confirmed by XPS and FTIR. Post-annealing was also carried out to clarify the thermal stability of the defects. The number of spin centers decreased with increasing annealing temperature, and eventually, the defective structure changed to a graphitic one by annealing at 800 °C.  相似文献   
16.
A BiCMOS logic circuit with very small input capacitance has been developed, which operates at low supply voltages. A High-beta BiCMOS (Hβ-BiCMOS) gate circuit which fully utilizes the bipolar transistor features achieves 10 times the speed of a CMOS gate circuit with the same input capacitance and operating at 3.3 V supply voltage. In order to lower the minimum supply voltage of Hβ-BiCMOS, a BiCMOS circuit configuration using a charge pump to pull up the output high level of the BiCMOS gate circuit is proposed. By introducing a BiCMOS charge pump, Hβ-BiCMOS achieves very high speed operation at sub-2.0 V supply voltage. It has also been demonstrated that only a very small number of charge pump circuits are required to drive a large number of Hβ-BiCMOS gate circuits  相似文献   
17.
Using in situ hybridization techniques, we examined the expression of ornithine decarboxylase (ODC) mRNA in the skin of five patients with systemic sclerosis (SSc) and five normal controls. Sections treated with an anti-sense probe showed concentrated grains exclusively in the epidermis of SSc patients, but not in that of normal controls. Because our subcloned anti-sense probe specifically hybridizes with ODC mRNA, these findings indicate that the expression of ODC mRNA is elevated in SSc epidermis. Possibly polyamines have an important part to play in the skin changes of SSc.  相似文献   
18.
The preparation and characterization of indium oxide (InO x )/tin oxide (SnO y ) multilayered films deposited by ion-beam sputtering are described and compared with indium tin oxide (ITO) films. The structure and the optoelectrical properties of the films are studied in relation to the layered structures and the post-deposition annealing. Low-angle X-ray diffraction analysis showed that most films retained the regular layered structures even after annealing at 500° C for 16 h. As an example, we obtained a resistivity of 6×10–4 cm and a transparency of about 85% in the visible range at a thickness of 110 nm in a multilayered film of InO x (2.0 nm)/SnO y (0.2 nm)×50 pairs when annealed at 300° C for 0.5 h in air. Hall coefficient measurements showed that this film had a mobility of 17 cm2 V–1 sec–1 and a carrier concentration (electron density) of 5×1020 cm–3.  相似文献   
19.
A Pt-deposited carbon nanotube (CNT) shows higher performance than a commercial Pt-deposited carbon black (CB) with reducing 60% Pt load per electrode area in polymer electrolyte fuel cells (PEFCs) below 500 mA/cm2. K2PtCl4 and H2PtCl6·6(H2O) are used for the Pt deposition onto multi-walled CNTs (MWCNTs), which are produced by the catalytic decomposition of hydrocarbons. The electric power densities produced using the Pt/CNT electrodes are greater than that of the Pt/CB by a factor of two to four on the basis of the Pt load per power. CNTs are thus found to be a good support of Pt particles for PEFC electrodes. TEM images show 2–4-nm Pt nanoparticles dispersed on the CNT surfaces. These high performances are considered to be due to the efficient formation of the triple-phase boundaries of gas–electrode–electrolyte. The mechanisms of Pt deposition are discussed for these Pt-deposited CNTs.  相似文献   
20.
This paper addresses a phase space partitioning problem in motion planning systems. A class of kinematic and dynamic motion planning systems, including rapid semioptimal motion-planning (RASMO), uses partitions for phase spaces in cumulative optimization criteria. In these systems, a partition results in a uniquely planned motion with a quality that is determined by a selected optimization criterion. In this paper, state-dispersion-based phase space partitioning (SDPP) that generates adaptive partitions is proposed. These partitions allow the motion planning systems to plan better motions. Uniform partitions and adaptively fixed partitions of SDPP are compared under several conditions using RASMO and a double inverted pendulum model while setting the optimality criterion of RASMO to time. The results reveal that RASMO with SDPP plans smaller time motions than those obtained with RASMO using uniform partitions.  相似文献   
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