The characteristics and measuring technique of refractory dissolved organic substances in urban runoff.

It is considered that refractory dissolved organic substances have caused an increase in the COD concentration in Lake Biwa in recent years. We investigated the organic matter in the first flush of stormwater runoff from a road in the watershed area of the lake, and studied the possibility of improvement in the water environment from that aspect. After percolating the stormwater through soil, we analyzed organic substances fractionated by using GPC-TC. And we examined the effect of removal of organic substances by comparing the peak height before and after percolation. In the result of the experiments, we found that soil infiltration reduced the refractory dissolved organic substance and we successfully designed a system for a simple and easy experimental facility to treat urban runoff.     

Room-temperature CW operation of InGaAsP lasers on Si fabricated by wafer bonding

1.3-/spl mu/m InGaAsP-InP lasers have been successfully fabricated on Si substrates by wafer bonding with heat treatment at 400/spl deg/C. A pressure of 4 kg/cm/sup 2/ has been applied on the wafers before the heat treatment and this pressure application has enabled us to achieve bonding strength required for the device fabrication even when the bonding temperature is as low as 400/spl deg/C. Room-temperature continuous-wave operation with threshold current of 49 mA has been achieved for 7-/spl mu/m-wide mesa lasers.     

Air trenches for sharp silica waveguide bends

Air trench structures for reduced-size bends in low-index contrast waveguides are proposed. To minimize junction loss, the structures are designed to provide adiabatic mode shaping between low- and high-index contrast regions, which is achieved by the introduction of "cladding tapers." Drastic reduction in effective bend radius is predicted. We present two-dimensional (2-D) finite-difference time-domain/effective index method simulations of bends in representative silica index contrasts. We also argue that substrate loss, while present, can be controlled with such air trenches and reduced to arbitrarily low levels limited only by fabrication capabilities. The required trench depth, given an acceptable substrate loss, is calculated in three dimensions using an approximate equivalent current sheet method and also by a numerical solver for full-vector leaky modes. A simple, compact waveguide T-splitter using air trench bends is presented.     

Direct growth of CdTe on (100), (211), and (111) Si by metalorganic chemical vapor deposition

CdTe epilayers were grown directly on (100), (211), and (111) silicon substrates by metalorganic chemical vapor deposition (MOCVD). The crystallinity and the growth orientation of the CdTe film were dependent on the surface treatment of the Si substrate. The surface treatment consisted of exposure of the Si surface to diethyltelluride (DETe) at temperatures over 600°C prior to CdTe growth. Direct growth of CdTe on (100) Si produced polycrystalline films whereas (lll)B single crystals grew when Si was exposed to DETe prior to CdTe growth. On (211) Si, single crystal films with (133)A orientation was obtained when grown directly; but produced films with (211)A orientation when the Si surface was exposed to DETe. On the other hand, only (lll)A CdTe films were possible on (111) Si, both with and without Te source exposure, although twinning was increased after exposure. The results indicate that the exposure to a Te-source changes the initial growth stage significantly, except for the growth on (111) Si. We propose a model in which a Te atom replaces a Si atom that is bound to two Si atoms.     

The integral experiment on beryllium with D-T neutrons for verification of tritium breeding

A clean benchmark experiment on beryllium was performed with D-T neutrons at the FNS facility of the Japan Atomic Energy Agency. The main objective was to verify the integral data related to the tritium production on lithium isotopes. Tritium production rates, as well as activation reaction rates were measured inside the beryllium assembly that was shaped as a pseudo-cylindrical slab with an area-equivalent diameter of 628 mm and a thickness of 355 mm. Experimental results were analyzed with a three-dimensional Monte Carlo transport code MCNP-4C and FENDL/MC-2.0, JENDL-3.2/3.3 neutron transport libraries. Evaluation of reaction rates was based on the cross section data taken from the JENDL Dosimetry File and ENDF B-VI data libraries. Analysis shows that all calculation combinations (transport and activation cross section libraries) used for evaluation of reaction rates give data that is agreeable with measured values within 10%.     

Synthesis and characterization of silicon nitride whiskers

Silicon nitride whiskers were synthesized by the carbothermal reduction of silica under nitrogen gas flow. The formation of silicon nitride whiskers occurs through a gas-phase reaction, 3SiO(g)+3CO(g)+2N₂(g)=Si₃N₄()+3CO₂(g), and the VS mechanism. The generation of SiO gas was enhanced by the application of a halide bath. Various nitrogen flow rates resulted in different whisker yields and morphologies. A suitable gas composition range of N₂, SiO and O₂ is necessary to make silicon nitride stable and grow in a whisker form. The oxygen partial pressure of the gas phase was measured by an oxygen sensor and the gas phase was analysed for CO/CO₂ by gas chromatography. Silicon nitride was first formed as a granule, typically a polycrystalline, and then grown as a single crystal whisker from the {1 0 0} plane of the granule along the 210 direction. The whiskers were identified as-sialon with Z value ranging from 0.8 to 1.1, determined by lattice parameter measurements.     

How to Prove Impossibility Under Global Fairness: On Space Complexity of Self-Stabilizing Leader Election on a Population Protocol Model

A population protocol is one of distributed computing models for passively-mobile systems, where a number of agents change their states by pairwise interactions between two agents. In this paper, we investigate the solvability of the self-stabilizing leader election in population protocols without any kind of oracles. We identify the necessary and sufficient conditions to solve the self-stabilizing leader election in population protocols from the aspects of local memory complexity and fairness assumptions. This paper shows that under the assumption of global fairness, no protocol using only n−1 states can solve the self-stabilizing leader election in complete interaction graphs, where n is the number of agents in the system. To prove this impossibility, we introduce a novel proof technique, called closed-set argument. In addition, we propose a self-stabilizing leader election protocol using n states that works even under the unfairness assumption. This protocol requires the exact knowledge about the number of agents in the system. We also show that such knowledge is necessary to construct any self-stabilizing leader election protocol.     

Band Gap Modification of Diamond Photonic Crystals by Changing the Volume Fraction of the Dielectric Lattice

Photonic crystals with a diamond structure of epoxy lattices in which TiO₂-based ceramic particles are dispersed were fabricated by stereolithography. The periodicity of the lattice was designed to reflect electromagnetic waves in the gigahertz range. The volume fraction (β) of the dielectric lattice medium was modified from 14% to 33% by changing the rod diameter of the lattice. The photonic band gap was observed along Γ-L 〈111〉, Γ-X 〈100〉, and Γ-K 〈110〉 directions and the complete photonic band gap was formed at over β= 20%. The width of the forbidden gap increased gradually when the β increased over 14%, and reached 2.4 GHz at β= 33%. These results agreed with the band calculation using the plane wave expansion method.