THIRD PHASE FORMATION IN EXTRACTION OF THORIUM NITRATE BY MIXTURES OF TRIALKYL PHOSPHATES

ABSTRACT

This paper reports the results of the studies on third phase formation during the extraction of thorium nitrate from zero free acidity solutions by mixtures of trialkyl phosphates. The phosphates used are tri n-butyl phosphate(TBP), triiso butyl phosphate(TiBP), tri sec butyl phosphate (TsBP) and tri n-amyl phosphate(TAP). The results indicate that small additions of a homologous phosphate can alter the Limiting Organic Concentration (LOC) above which the third phase formation takes place and thus can be advantageously utilised. Use of mixtures of the trialkyl phosphates as extractant can thus obviate the need for adding modifiers such as alcohols to the organic phase for avoiding third phase formation.     

Development of a novel metal hydride–air secondary battery

A laboratory metal hydride/air cell was evaluated. Charging was via a bifunctional air gas-diffusion electrode. Mixed nickel and cobalt oxides, supported on carbon black and activated carbon, were used as catalysts in this electrode. At 30mAcm–2 in 6m KOH, the air electrode potentials were –0.2V (oxygen reduction) and +0.65V (oxygen evolution) vs Hg/HgO. The laboratory cell was cycled for 50 cycles at the C/2 rate (10mAcm–2). The average discharge/charge voltages of the cell were 0.65 and 1.6V, respectively. The initial capacity of the metal hydride electrode decreased by about 15% after 50 cycles.     

Dispersion deposition of metal — Particle composites and the evaluation of dispersion deposited nickel — Lanthanum nickelate electrocatalyst for hydrogen evolution

A method for the preparation of high surface area coatings and its application towards fabrication of prospective composite electrocatalysts for hydrogen evolution is proposed. Exploratory studies with such a composite, (Ni/LaNiO₃), as a hydrogen electrode in alkaline solutions indicate that it is a more active electrocatalyst than sintered or electrodeposited nickel. The electrocatalytic properties were found to be a strong function of the deposition parameters as well as of the history of the oxide powder.     

Radiation performance of planar junctionless devices and junctionless SRAMs

The objective of this work is to analyze the radiation performance of the planar junctionless devices and junctionless device-based SRAMs. Bulk planar junctionless transistor (BPJLT) and silicon-on-insulator planar junctionless transistors (SOIPJLT) under heavy ions irradiation have been studied using TCAD simulations. 6T-SRAM cells built up of BPJLTs and SOIPJLTs have been investigated for their soft error performance. Even though the bipolar amplification of the SOIPJLT is more compared to BPJLT, the soft error performance of the SOIPJLT SRAM is better compared to BPJLT SRAM.     

Simulation Studies of Annealing Effect on a mc-Si Ingot for Photovoltaic Application

Silicon - A multi-crystalline silicon (mc-Si) ingot was grown by the directional solidification (DS) process for photovoltaic (PV) application. We have numerically investigated shear stress and...     

Ta2O5/Nb2O5 and Y2O3 Co-doped Zirconias for Thermal Barrier Coatings

Zirconia doped with 3.2–4.2 mol% (6–8 wt%) yttria (3–4YSZ) is currently the material of choice for thermal barrier coating topcoats. The present study examines the ZrO₂-Y₂O₃-Ta₂O₅/Nb₂O₅ systems for potential alternative chemistries that would overcome the limitations of the 3–4YSZ. A rationale for choosing specific compositions based on the effect of defect chemistry on the thermal conductivity and phase stability in zirconia-based systems is presented. The results show that it is possible to produce stable (for up to 200 h at 1000°–1500°C), single (tetragonal) or dual (tetragonal + cubic) phase chemistries that have thermal conductivity that is as low (1.8–2.8W/m K) as the 3–4YSZ, a wide range of elastic moduli (150–232 GPa), and a similar mean coefficient of thermal expansion at 1000°C. The chemistries can be plasma sprayed without change in composition or deleterious effects to phase stability. Preliminary burner rig testing results on one of the compositions are also presented.     

Effect of underlap and soft error performance in 30 nm FinFET-based 6T-SRAM cells with simultaneous and independent driven gates

The effect of Gate-Source/Drain underlap (L _un) on soft error performance in 30 nm common double gate-FinFET (simultaneously driven gates) and independent double gate-FinFET (independently driven gates) have been examined through extensive mixed mode-device and circuit simulations using Sentaurus TCAD. Four different 6T-SRAM topologies, one simultaneously driven double gate-FinFET and three independently driven double gate-FinFETs-based topologies namely Flex-V _TH, Flex-PG, and PG-SN are chosen to study the geometrical parameter L _un and also to calculate their soft error performance. When L _un increases, current decreases due to increase in parasitic series resistance. The simulation results reveal that L _un increase in independently driven double gate-FinFETs in place of access devices in 6T-SRAM does not degrade the soft error performance significantly whereas the L _un increase inside the cell, in the inverters, degrade the performance significantly.     

Are Diamonds a MEMS' Best Friend?

Next-generation military and civilian communication systems will require technologies capable of handling data/ audio, and video simultaneously while supporting multiple RF systems operating in several different frequency bands from the MHz to the GHz range [1]. RF microelectromechani-cal/nanoelectromechanical (MEMS/NEMS) devices, such as resonators and switches, are attractive to industry as they offer a means by which performance can be greatly improved for wireless applications while at the same time potentially reducing overall size and weight as well as manufacturing costs.