Interfacial Reactions of Sn, Sn-3.0Ag-0.5Cu, and Sn-9Zn Lead-Free Solders with Fe-42Ni Substrates

Interfacial reactions between Sn, Sn-3.0 wt.%Ag-0.5 wt.%Cu (SAC), and Sn-9 wt.%Zn (SZ) lead-free solders and Fe-42 wt.%Ni (alloy 42) substrates at 240°C, 255°C, and 270°C were investigated in this study. FeSn₂, (Fe,Ni, Cu)Sn₂, and (Ni,Fe)₅Zn₂₁ phases were formed, respectively, at the interface in the Sn/alloy 42, SAC/alloy 42, and SZ/alloy 42 couples. As the reaction time and temperature were increased, the layered intermetallic compound (IMC) assumed two distinct structures, i.e., a thicker layer and a pillar-shaped IMC, in all couples. The IMC thickness of these couples increased with the increase of reaction time and temperature. The IMC thickness was also proportional to the square root of the reaction time. The interfacial reaction mechanism of these couples was diffusion controlled.     

Ambient‐Stable,Annealing‐Free,and Ambipolar Organic Field‐Effect Transistors Based on Solution‐Processable Poly(2,2′‐bis(trifluoromethyl)biphenyl‐alt‐2,5‐divinylthiophene) without Long Alkyl Side Chains

An ambipolar conjugated polymer CF₃‐PBTV, poly(2,2′‐bis(trifluoromethyl)biphenyl‐alt‐2,5‐divinylthiophene), consisting of thienylenevinylene as the donor and trifluoromethyl‐substituted biphenyl as the acceptor has been successfully synthesized. CF₃‐PBTV shows solution‐processability without electrically insulating long alkyl side chains. Grazing incidence X‐ray diffraction results suggest a nearly equal population of flat‐on and end‐on domains in CF₃‐PBTV thin film. The excellent ambipolarity of CF₃‐PBTV is demonstrated by well‐equivalent charge mobilities of 0.065 and 0.078 cm² V^?1 s^?1 for p‐ and n‐channel, respectively. The organic field‐effect transistors (OFET) also shows very high on/off ratio (≈10⁷) which is attributed to the relatively large bandgap and low‐lying highest occupied molecular orbital (HOMO) of CF₃‐PBTV. The OFET performance barely changes after the device is stored in ambient conditions for 90 days. The ambient‐stability is attributed to the enhanced oxidative stability from its low‐lying HOMO and the better moisture resistance from its fluorine contents. The performance of CF₃‐PBTV based OFET is annealing independent. It is noteworthy that the solution‐processable, ambipolar, and thienylenevinylene‐containing conjugated polymer without any long alkyl side chains is reported for the first time. And to the best of our knowledge, it is the first ambient‐stable, annealing‐free OFET with well‐equivalent ambipolarity.     

Performance enhancement of III–V compound multijunction solar cell incorporating transparent electrode and surface treatment

To enhance the performance of tandem‐type III–V compound multijunction solar cells, the transparent indium‐tin‐oxide (ITO) film was used to replace conventional metal electrode for increasing the incident light area. For performing ohmic contact between the n‐AlInP window layer and the ITO film, a transition layer of Au/AuGeNi thin metals was used and investigated. Besides, to improve ohmic performance and to passivate the surface states, (NH₄)₂S_x surface treatment was used. The conversion efficiency of the (NH₄)₂S_x‐treated triple‐junction solar cells was increased more than 3.09%. Furthermore, an improved oblique SiO₂/SiO₂/ITO triple antireflection structure was designed to reduce the reflectivity of illuminating sunlight. The conversion efficiency of the (NH₄)₂S_x‐treated triple‐junction solar cell with improved antireflection structure could be improved more than 4.23%. Simple and effective approaches were designed to improve the performances of tandem‐type III–V triple‐junction solar cells. Copyright © 2010 John Wiley & Sons, Ltd.     

Morphological Stabilization by Supramolecular Perfluorophenyl‐C60 Interactions Leading to Efficient and Thermally Stable Organic Photovoltaics

A new PC₆₁BM‐based fullerene, [6,6]‐phenyl‐C₆₁ butyric acid pentafluorophenyl ester (PC₆₁BP^F) is designed and synthesized. This new n‐type material can replace PC₆₁BM to form a P3HT:PC₆₁BP^F binary blend or serve as an additive to form a P3HT:PC₆₁BM:PC₆₁BP^F ternary blend. Supramolecular attraction between the pentafluorophenyl group of PC₆₁BP^F and the C₆₀ cores of PC₆₁BP^F/PC₆₁BM can effectively suppress the PC₆₁BP^F/PC₆₁BM materials from severe aggregation. By doping only 8.3 wt% PC₆₁BP^F, device PC₆₁BP^F651 exhibits a PCE of 3.88% and decreases slightly to 3.68% after heating for 25 h, preserving 95% of its original value. When PC₆₁BP with non‐fluorinated phenyl group is used to substitute PC₆₁BP^F, the stabilizing ability disappears completely. The efficiencies of PC₆₁BP651 and PC₆₁BP321 devices significantly decay to 0.44% and 0.11%, respectively, after 25 h isothermal heating. Most significantly, this strategy is demonstrated to be effective for a blend system incorporating a low band‐gap polymer. By adding only 10 wt% PC₆₁BP^F, the PDTBCDTB: PC₇₁BM‐based device exhibits thermally stable morphology and device characteristics. These findings demonstrate that smart utilization of supramolecular interactions is an effective and practical strategy to control morphological evolution.     

Fast Symbol Detection for Massive G-STBC MIMO Systems

In this paper, a group-based fast symbol detection scheme is proposed for massive Group-wise Space–Time Block Code Multiple-Input Multiple-Output systems. The proposed scheme first chooses a number G, (e.g. \(G=4,6,8\)) as the size of each group and then conducts the Minimum Mean Square Error (MMSE) detectors to facilitate symbol detection group by group. In particular, instead of directly using huge computational complexity to compute the MMSE detectors, the proposed scheme recursively finds the corresponding assistant matrices to determine the groups and calculate the MMSE detectors. As a result, the transmitted symbols can be recursively estimated group by group. Finally, simulation results and complexity analysis show the proposed scheme performs very close to the existing methods, while using lower computational complexity.     

Driver IC and COG Package Design

This paper investigates the interconnection between the driver integrated circuit (IC) and glass substrate via anisotropic conductive adhesive (ACF) of chip on glass package. The conductive particle deformation is evaluated using a novel method, optical microscope (OM) inspection. The proposed method is more convenient than the traditional approach using scanning electron microscopy applied in the manufacturing process. Interconnection performance is easily judged using OM, allowing poor interconnection between the driver IC and glass substrate to be screened out. Several types of driver ICs with different bump area ratios (total input bump area/total output bump area, input/output ratio) and length/width (L/W) ratios are designed in this experiment. The conductive particle deformations are investigated in this study. Driver ICs with L/W ratios larger than 15 have better conductive particle deformation uniformity at each position. The average deformation degree at the driver IC center position is larger than that at the side and edge positions. The deformation degree at the input position with a smaller bump area is better than that at the output position. The conductive resistance increases with the reliability testing time because of the thermal stress effect and softening of the ACF polymer material. The deformation degree is related to the conductive resistance of the interconnection. The conductive resistance is lower at the center and input positions with larger deformation degree.     

SCR-based transient detection circuit for on-chip protection design against system-level electrical transient disturbance

A new silicon controlled rectifier (SCR)-based transient detection circuit for on-chip protection design against system-level electrical transient disturbance is proposed. The circuit function to detect positive or negative electrical transients during system-level electrostatic discharge (ESD) and electrical fast transient (EFT) tests has been verified in silicon chip. The experimental results in a 0.18-μm CMOS process have confirmed that the new proposed detection circuit can successfully memorize the occurrence of system-level electrical transient disturbance events. The detection results can be cooperated with firmware design to execute system recovery procedures, therefore the immunity of microelectronic systems against system-level ESD or EFT tests can be effectively improved.     

Engineering a Nanoscale Al‐MOF‐Armored Antigen Carried by a “Trojan Horse”‐Like Platform for Oral Vaccination to Induce Potent and Long‐Lasting Immunity

Vaccination via the oral administration of an antigen faces many challenges, including gastrointestinal (GI) proteolysis and mucosal barriers. To limit GI proteolysis, a biomimetically mineralized aluminum‐based metal–organic framework (Al‐MOF) system that is resistant to ambient temperature and pH and can act synergistically as a delivery vehicle and an adjuvant is synthesized over a model antigen ovalbumin (OVA) to act as armor. To overcome mucosal barriers, a yeast‐derived capsule is used to carry the Al‐MOF‐armored OVA as a “Trojan Horse”‐like transport platform. In vitro experiments reveal that the mineralization of Al‐MOFs forms an armor on OVA that protects against highly acidic and degradative GI conditions. However, the mineralized Al‐MOFs can gradually disintegrate in a phosphate ion‐containing simulated intracellular fluid, slowly releasing their encapsulated OVA. In vivo studies reveal that the “Trojan Horse”‐like transport platform specifically targets intestinal M cells, favoring the transepithelial transport of the Al‐MOF‐armored OVA, followed by subsequent endocytosis in local macrophages, ultimately accumulating in mesenteric lymph nodes, yielding long‐lasting, high‐levels of mucosal S‐IgA and serum IgG antibodies. Such an engineered delivery platform may represent a promising strategy for the oral administration of prophylactic or therapeutic antigens for vaccination.     

Genetic-algorithm-assisted multiuser detection in asynchronous CDMA communications

In an asynchronous direct-sequence code-division multiple-access, a specific bit of the reference user is interfered by two asynchronously arriving surrounding bits of all the other users supported by the system. Hence, for optimum multiuser detection, the entire input bit sequence influencing the current bit decisions must be considered, which results in a high detection delay as well as a high receiver complexity. Suboptimal multiuser-detection methods have been proposed based on a truncated observation window, in which the so-called "edge" bits are tentatively estimated by some other means. Using a similar approach, a multiuser detector is developed in this contribution that invokes genetic algorithms (GAs) in order to estimate both the desired bits as well as the edge bits within the truncated observation window. Using computer simulations, we showed that by employing GAs for improving the estimation reliability of the edge bits, our proposed multiuser detector is capable of achieving a near-optimum bit-error-rate performance, while imposing a lower complexity than the optimum multiuser detector.     

Dithienocarbazole‐Based Ladder‐Type Heptacyclic Arenes with Silicon,Carbon, and Nitrogen Bridges: Synthesis,Molecular Properties,Field‐Effect Transistors,and Photovoltaic Applications

A new class of ladder‐type dithienosilolo‐carbazole ( DTSC ), dithienopyrrolo‐carbazole ( DTPC ), and dithienocyclopenta‐carbazole ( DTCC ) units is developed in which two outer thiophene subunits are covalently fastened to the central 2,7‐carbazole cores by silicon, nitrogen, and carbon bridges, respectively. The heptacyclic multifused monomers are polymerized with the benzothiadiazole ( BT ) acceptor by palladium‐catalyzed cross‐coupling to afford three alternating donor‐acceptor copolymers poly(dithienosilolo‐carbazole‐alt‐benzothiadiazole) ( PDTSCBT) , poly(dithienocyclopenta‐carbazole‐alt‐benzothiadiazole) ( PDTCCBT), and poly(dithienopyrrolo‐carbazole‐alt‐benzothiadiazole) ( PDTPCBT) . The silole units in DTSC possess electron‐accepting ability that lowers the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) energy levels of PDTSCBT , whereas stronger electron‐donating ability of the pyrrole moiety in DTPC increases the HOMO and LUMO energy levels of PDTPCBT . The optical bandgaps (E_g^opt) deduced from the absorption edges of thin film spectra are in the following order: PDTSCBT (1.83 eV) > PDTCCBT (1.64 eV) > PDTPCBT (1.50 eV). This result indicated that the donor strength of the heptacyclic arenes is in the order: DTPC > DTCC > DTSC . The devices based on PDTSCBT and PDTCCBT exhibited high hole mobilities of 0.073 and 0.110 cm² V^?1 s^?1, respectively, which are among the highest performance from the OFET devices based on the amorphous donor‐acceptor copolymers. The bulk heterojunction photovoltaic device using PDTSCBT as the p‐type material delivered a promising efficiency of 5.2% with an enhanced open circuit voltage, V_oc, of 0.82 V.