Equations for Thermal Conductivity of Natural Refrigerants

Experimental results for the thermal conductivity of ammonia, propane, butane, isobutane, and propylene are reviewed, with special attention given to the liquid phase. New equations for the thermal conductivity of these five substances applicable for practical use over wide ranges of temperature and pressure including the critical region are proposed based on the experimental data. The present equations as well as the existing equations are compared with the experimental data. Compared with existing equations for ammonia, isobutane, and propylene, which are not reliable in the liquid phase, the behavior of the thermal conductivity for these substances is much improved using the present equations.     

Development and Evaluation of a Robust Sandwich Immunoassay System Detecting Serum WFA-Reactive IgA1 for Diagnosis of IgA Nephropathy

Aberrant glycosylation of IgA1 is involved in the development of IgA nephropathy (IgAN). There are many reports of IgAN markers focusing on the glycoform of IgA1. None have been clinically applied as a routine test. In this study, we established an automated sandwich immunoassay system for detecting aberrant glycosylated IgA1, using Wisteria floribunda agglutinin (WFA) and anti-IgA1 monoclonal antibody. The diagnostic performance as an IgAN marker was evaluated. The usefulness of WFA for immunoassays was investigated by lectin microarray. A reliable standard for quantitative immunoassay measurements was designed by modifying a purified IgA1 substrate. A validation study using multiple serum specimens was performed using the established WFA-antibody sandwich automated immunoassay. Lectin microarray results showed that WFA specifically recognized N-glycans of agglutinated IgA1 in IgAN patients. The constructed IgA1 standard exhibited a wide dynamic range and high reactivity. In the validation study, serum WFA-reactive IgA1 (WFA+-IgA1) differed significantly between healthy control subjects and IgAN patients. The findings indicate that WFA is a suitable lectin that specifically targets abnormal agglutinated IgA1 in serum. We also describe an automated immunoassay system for detecting WFA+-IgA1, focusing on N-glycans.     

W-band waveguide photomixer using a uni-traveling-carrier photodiode with 2-mW output

Developed a W-band (75-110 GHz) waveguide photomixer with a uni-traveling carrier photodiode, which can be driven by two 1.5-/spl mu/m lasers. It generates an output power of 2.2/spl plusmn/0.2 mW at 100 GHz with a laser power of less than 100 mW, and its relative power variation is as small as 3 dB across the entire frequency range of the W-band. A 100-GHz superconductor-insulator-superconductor receiver driven by this photomixer shows the same noise temperature around 26 K as that driven by a conventional Gunn oscillator.     

A 16-Mb CMOS SRAM with a 2.3-μm2 single-bit-linememory cell

A novel architecture that enables fast write/read in poly-PMOS load or high-resistance polyload single-bit-line cells is developed. The architecture for write uses alternate twin word activation (ATWA) with bit-line pulsing. A dummy cell is used to obtain a reference voltage for reading. An excellent balance between a normal cell signal line and a dummy cell signal line is attained using balanced common data-line architecture. A newly developed self-bias-control (SBC) sense amplifier provides excellent stability and fast sensing performance for input voltages close to V_CC at a low power supply of 2.5 V. The single-bit-line architecture is incorporated in a 16-Mb SRAM, which was fabricated using 0.25-μm CMOS technology. The proposed single-bit-line architecture reduces the cell area to 2.3-μm² , which is two-thirds of a conventional two-bit-line cell with the same processes. The 16-Mb SRAM, a test chip for a 64-Mb SRAM, shows a 15-ns address access time and a 20-ns cycle time     

Measurement and analysis of neutron-induced soft errors insub-half-micron CMOS circuits

Neutron-induced soft error rates (SERs) of subhalf-micron CMOS SRAM and Latch circuits were studied both experimentally and analytically to investigate cosmic ray neutron-induced soft errors (SEs). Because the neutron beam used in the measurement has an energy spectrum similar to that of sea-level atmospheric neutrons, our SER data corresponds to those induced by cosmic ray neutrons. The α-particle induced SERs were also measured for comparison with the neutron-induced SER's. Neutron-induced SEs occurred in both circuits. On the other hand, α-induced SEs occurred in SRAM, but not in the Latch circuits. The measured SERs agreed with simulated results. We discussed the significance of how cosmic ray neutrons affects CMOS circuits at ground level     

A novel GaAs power MESFET with low distortion characteristicsemploying semi-insulating setback layer under the gate

A low distortion GaAs power MESFET has been developed by employing a semi-insulating setback layer under the gate. The setback region was obtained by diffusing chromium from the Cr/Pt/Au gate metal in self-aligned manner. The novel power FET with the setback layer was found to be insensitive to surface trapping effects. They showed only 5-6 percent frequency dispersion of drain current at 1 MHz compared to DC condition. Because of this small frequency dispersion, the typical measurement FET, which has a surface setback layer, with a gate width of 36 mm exhibited 1.5 dB larger output power at 1 dB gain compression point than that of the FET without the setback layer. Moreover, in the π/4 shift-QPSK modulation that has been most popular in digital mobile communication system, the FET exhibited 11 dB smaller adjacent channel leakage power than the conventional one at the output power of 31.5 dBm