用P1905.1设计新一代家庭网络

家庭互连技术正在向第二代演变,将能提供运营商和消费者所希望的服务质量,并能让用户透明地使用家庭网络.本文就是介绍了一种新的家庭网络设计方案.     

Sleepy keeper style based Low Power VLSI Architecture of a Viterbi Decoder applying for the Wireless LAN Operation sustainability

Analog Integrated Circuits and Signal Processing - Remarkable progress in the field of wireless communication has created a research interest for Viterbi decoder with long duration of battery life,...     

Assessing the performance of crack detection tests for solder joints

This paper presents both modelling and experimental test data to characterise the performance of four non-destructive tests. The focus is on determining the presence and rough magnitude of thermal fatigue cracks within the solder joints for a surface mount resistor on a strip of FR4 PCB. The tests all operate by applying mechanical loads to the PCB and monitoring the strain response at the top of the resistor. The modelling results show that of the four tests investigated, three are sensitive to the presence of a crack in the joint and its magnitude. Hence these tests show promise in being able to detect cracking caused by accelerated testing. The experimental data supports these results although more validation is required.     

Development of the high-pressure electro-dynamic gradient crystal-growth technology for semi-insulating CdZnTe growth for radiation detector applications

The high-pressure electro-dynamic gradient (HP-EDG) crystal-growth technology has been recently developed and introduced at eV PRODUCTS to grow large-volume, semi-insulating (SI) CdZnTe single crystals for room-temperature x-ray and gamma-ray detector applications. The new HP growth technology significantly improves the downstream CdZnTe device-fabrication yield compared to earlier versions of the HP crystal-growth technology because of the improved structural and charge-transport properties of the CdZnTe ingots. The new state-of-the-art, HP-EDG crystal-growth systems offer exceptional flexibility and thermal and mechanical stability and allow the growth of high-purity CdZnTe ingots. The flexibility of the multi-zone heater system allows the dynamic control of heat flow to optimize the growth-interface shape during crystallization. This flexibility combined with an advanced control system, improved system diagnostics, and realistic heat-transport modeling provides an excellent platform for continuing process development. Initial results on large-diameter (140 mm), SI Cd_1−xZn_xTe (x=0.1) ingots grown in low temperature gradients with the HP-EDG technique show reduced defect density and complete elimination of ingot cracking. The increased single-crystal yield combined with the improved charge transport allows the fabrication of large-volume, high-sensitivity, high energy-resolution detector devices at increased yield. The CdZnTe ingots grown to date produced large-volume crystals (≥1cm³) with electron mobility-lifetime product (μτ_e) in the (3–7) × 10⁻³ cm²/V range. The lower-than-desired charge-transport uniformity of the HP-EDG CdZnTe ingots is associated with the high density of Te inclusions formed in the ingots during crystallization. The latest process-development efforts show a reduction in the Te-inclusion density, an increase of the charge-transport uniformity, and improved energy resolution of the large-volume detectors fabricated from these crystals.     

Singular value decomposition based fusion for super-resolution image reconstruction

In this paper, we address a super-resolution problem of generating a high-resolution image from low-resolution images. The proposed super-resolution method consists of three steps: image registration, singular value decomposition (SVD)-based image fusion and interpolation. The contribution of this work is two-fold. First we customize an image registration approach using Scale Invariant Feature Transform (SIFT), Belief Propagation and Random Sampling Consensus (RANSAC) for super-resolution. Second, we propose SVD-based fusion to integrate the important features from the low-resolution images. The proposed image registration and fusion steps effectively maintain the important features and greatly improve the super-resolution results. Results, for a variety of image examples, show that the proposed method successfully generates high-resolution images from low-resolution images.     

Key processing with control vectors

A method is presented for controlling cryptographic key usage based on control vectors. Each cryptographic key has an associated control vector that defines the permitted uses of the key within the cryptographic system. At key generation, the control vector is cryptographically coupled to the key by way of a special encryption process. Each encrypted key and control vector are stored and distributed within the cryptographic system as a single token. Decryption of a key requires respecification of the control vector. As part of the decryption process, the cryptographic hardware verifies that the requested use of the key is authorized by the control vector. This article focuses mainly on the use of control vectors in cryptosystems based on the Data Encryption Algorithm.     

Laser-Printed Plasmonic Metasurface Supporting Bound States in the Continuum Enhances and Shapes Infrared Spontaneous Emission of Coupled HgTe Quantum Dots

In order to advance the development of quantum emitter-based devices, it is essential to enhance light-matter interactions through coupling between semiconductor quantum dots with high quality factor resonators. Here, efficient tuning of the emission properties of HgTe quantum dots in the infrared spectral region is demonstrated by coupling them to a plasmonic metasurface that supports bound states in the continuum. The plasmonic metasurface, composed of an array of gold nanobumps, is fabricated using single-step direct laser printing, opening up new opportunities for creating exclusive 3D plasmonic nanostructures and advanced photonic devices in the infrared region. A 12-fold enhancement of the photoluminescence in the 900–1700 nm range is observed under optimal coupling conditions. By tuning the geometry of the plasmonic arrays, controllable shaping of the emission spectra is achieved, selectively enhancing specific wavelength ranges across the emission spectrum. The observed enhancement and shaping of the emission are attributed to the Purcell effect, as corroborated by systematic measurements of radiative lifetimes and optical simulations based on the numerical solution of Maxwell's equations. Moreover, coupling of the HgTe photoluminescence to high quality factor modes of the metasurface improves emission directivity, concentrating output within an ≈20° angle.     

Intrinsically Low Thermal Conductivity in BiSbSe3: A Promising Thermoelectric Material with Multiple Conduction Bands

Bi₂Se₃, as a Te‐free alternative of room‐temperature state‐of‐the‐art thermoelectric (TE) Bi₂Te₃, has attracted little attention due to its poor electrical transport properties and high thermal conductivity. Interestingly, BiSbSe₃, a product of alloying 50% Sb on Bi sites, shows outstanding electron and phonon transports. BiSbSe₃ possesses orthorhombic structure and exhibits multiple conduction bands, which can be activated when the carrier density is increased as high as ≈3.7 × 10²⁰ cm^?3 through heavily Br doping, resulting in simultaneously enhancing the electrical conductivities and Seebeck coefficients. Meanwhile, an extremely low thermal conductivity (≈0.6–0.4 W m^?1 K^?1 at 300–800 K) is found in BiSbSe₃. Both first‐principles calculations and elastic properties measurements show the strong anharmonicity and support the ultra‐low thermal conductivity of BiSbSe₃. Finally, a maximum dimensionless figure of merit ZT ～ 1.4 at 800 K is achieved in BiSb(Se_0.94Br_0.06)₃, which is comparable to the most n‐type Te‐free TE materials. The present results indicate that BiSbSe₃ is a new and a robust candidate for TE power generation in medium‐temperature range.     

Atomistic Origin of the Enhanced Crystallization Speed and n‐Type Conductivity in Bi‐doped Ge‐Sb‐Te Phase‐Change Materials

Phase‐change alloys are the functional materials at the heart of an emerging digital‐storage technology. The GeTe‐Sb₂Te₃ pseudo‐binary systems, in particular the composition Ge₂Sb₂Te₅ (GST), are one of a handful of materials which meet the unique requirements of a stable amorphous phase, rapid amorphous‐to‐crystalline phase transition, and significant contrasts in optical and electrical properties between material states. The properties of GST can be optimized by doping with p‐block elements, of which Bi has interesting effects on the crystallization kinetics and electrical properties. A comprehensive simulational study of Bi‐doped GST is carried out, looking at trends in behavior and properties as a function of dopant concentration. The results reveal how Bi integrates into the host matrix, and provide insight into its enhancement of the crystallization speed. A straightforward explanation is proposed for the reversal of the charge‐carrier sign beyond a critical doping threshold. The effect of Bi on the optical properties of GST is also investigated. The microscopic insight from this study may assist in the future selection of dopants to optimize the phase‐change properties of GST, and also of other PCMs, and the general methods employed in this work should be applicable to the study of related materials, for example, doped chalcogenide glasses.     

Nanowire-Based Soft Wearable Human–Machine Interfaces for Future Virtual and Augmented Reality Applications

A virtual world has now become a reality as augmented reality (AR) and virtual reality (VR) technology become commercially available. Similar to how humans interact with the physical world, AR and VR systems rely on human–machine interface (HMI) sensors to interact with the virtual world. Currently, this is achieved via state of-the-art wearable visual and auditory tools that are rigid, bulky, and burdensome, thereby causing discomfort during practical application. To this end, a skin sensory interface has the potential to serve as the next-generation AR/VR technology because skin-like wearable sensors have advantages in that they can be ultrathin, ultra-soft, conformal, and imperceptible, which provides the ultimate comfort and immersive experience for users. In this progress report, nanowire-based soft wearable HMI sensors including acoustic, strain, pressure sensors, and physiological sensors are reviewed that may be adopted as skin sensory inputs in future AR/VR systems. Further, nanowire-based soft contact lenses, haptic force, and thermal and vibration actuators are covered as potential means of feedback for future AR/VR systems. Considering the possible effects of the virtual world on human health, skin-like wearable artery pulses, glucose, and lactate sensors are also described, which may enable imperceptible health monitoring during future AR/VR practices.