Physical model of drain conductance, gd, degradation ofNMOSFET's due to interface state generation by hot carrierinjection

Degradation of analog device parameters such as drain conductance, g_d, due to hot carrier injection has been modeled for NMOSFET's. In this modeling, mobility reduction caused by interface state generation by hot carrier injection and the gradual channel approximation were employed. It has been found that g_d degradation can be calculated from linear region transconductance, g_m, degradation which is usually monitored for hot carrier degradation of MOSFET's. The values of g_d degradation calculated from g_m degradation fit well to the measured values of g_d degradation The dependence of the g_d degradation lifetime on L_eff has been also studied, this model also provides an explanation of the dependence on L_eff. The model is then useful for lifetime predictions of analog circuits in which g_d degradation is usually more important than g_m degradation     

Integration of mobile vehicles for automated material handlingusing Profibus and IEEE 802.11 networks

This paper focuses on a method to integrate mobile devices such as a mobile robot, automated guided vehicle, and unmanned container transporter to form an automated material handling system. In this paper, the stationary devices are connected via a Profibus network while the mobile devices are communicating via an IEEE 802.11 wireless LAN. In order to integrate these two networks, a protocol converter is developed on a PC platform that runs two interacting processes with shared internal buffers. The protocol converter performs a role of translator between two different protocols by converting the format of a data frame. In addition to this basic conversion function, the protocol converter has a virtual polling algorithm to reduce the uncertainty involved in accessing the wireless network. Finally, the integrated network. of Profibus and IEEE 802.11 is experimentally evaluated for its data latency and throughput, which shows the feasibility of the Profibus-IEEE 802.11 network for industrial applications involving mobile devices     

Spectrally stable Er-fiber laser for application in phase-sensitive optical time-domain reflectometry

A high degree of frequency stability in an Er-fiber laser with the Fabry-Perot configuration was achieved using a long (25-km) optical-feedback loop. The frequency-drift rate was determined to be <1 MHz/min by observing temporal fringes in an unbalanced Mach-Zehnder interferometer. Instantaneous linewidth measured with a delayed self-heterodyne interferometer was less than the 3-kHz resolution limit. The laser was utilized in an optical time-domain reflectometry experiment to detect and locate a time-varying phase perturbation applied to an optical fiber.     

Deactivation of copper-ion-exchanged hydrogen-mordenite-type zeolite catalyst by SO2 for no reduction by NH3

Deactivation of copper-ion-exchanged hydrogen-mordenite-type zeolite catalyst by SO₂ for NO reduction by NH₃ was examined in a fixed-bed flow reactor. The deactivation of the catalyst was strongly dependent on reaction temperature. At high reaction temperatures over 300°C, the catalyst did not lose its initial activity up to 50 h of operation, regardless of SO₂ feed concentration from 500 to 20,000 ppm. However, at low reaction temperatures near 250°C, apparent deactivation did occur. Changes in the physicochemical properties such as surface area and sulfur content of deactivated catalyst well correlated with catalyst activity, depending upon reaction temperatures. The deactivation was due to pore blocking and/or filling by deactivating agents, which plugged and/or filled the pores of catalyst. The deactivating agents deposited on the catalyst surface were presumed to be (NH₄)₂SO₄ and/or (NH₄)HSO₄ from the results of TGA and ion-chromatography measurement.     

Monolithic SiGe Up‐/Down‐Conversion Mixers with Active Baluns

The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on‐chip 1 to 6 GHz up‐conversion and 1 to 8 GHz down‐conversion mixers using a 0.8 µm SiGe hetero‐junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up‐conversion mixer was implemented on‐chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up‐conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down‐conversion mixer was implemented on‐chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down‐conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz.     

Effects of α‐form or β‐form nuclei on polymorphic crystalline morphology of poly(butylene adipate)

The effects of α‐form and β‐form nuclei on polymorphic morphology of poly(butylene adipate) (PBA) upon recrystallization from the molten state up to various T_max values were examined by differential scanning calorimetry (DSC), wide‐angle X‐ray diffraction (WAXD) and polarized light microscopy (PLM). In this study, PBA with complex melting and polymorphism behaviour was used as a model for examining different types and extents of residual nuclei. As the PBA initially containing the sole α‐crystal was brought to a molten state of various T_max, the extents of trace α‐form crystal nuclei varied and were dependent on T_max. Furthermore, it did not matter whether, initially, the PBA contained α‐ or β‐form crystals (or both) because only a single type of α‐nuclei could be left upon treatment to the molten liquid state at T_max. Therefore, only the α‐crystal in PBA had ‘memory capacity’ in the molten liquid state while the β‐crystal did not. This was so because the latter had been completely transformed into the solid state prior to being heated into a liquid. PBA crystallized before α‐nuclei could be packed into α‐crystal, regardless of the crystallization temperature (T_c). For recrystallization from molten PBA without any nuclei, the crystalline polymorphism was correspondingly influenced by T_c. Copyright © 2005 Society of Chemical Industry     

A novel high-efficiency linear transmitter using injection-locked pulsed oscillator

This letter presents a novel high-efficiency linear transmitter using pulse-width modulation (PWM). An envelope of radio frequency (RF) input signal is modulated by the PWM. The modulated signal is applied to the gate bias of a class F injection-locked power oscillator and switches it on and off. By filtering the pulsed oscillating output signal of the injection-locked oscillator using high-Q bandpass filter, the input signal is restored. This technique enables the transmitter to have high efficiency with good linearity. Also, there is little distortion near saturation point of an active device. The measured results show efficiency of 54.6% and very good linearity in PCS band at 26.4-dBm output power.     

An Analog Front‐End Circuit for ISO/IEC 14443‐Compatible RFID Interrogators

An analog front‐end circuit for ISO/IEC 14443‐compatible radio frequency identification (RFID) interrogators was designed and fabricated by using a 0.25 µm double‐poly CMOS process. The fabricated chip was operated using a 3.3 Volt single‐voltage supply. The results of this work could be provided as reusable IPs in the form of hard or firm IPs for designing single‐chip ISO/IEC 14443‐compatible RFID interrogators.     

Error Concealment Based on Semantic Prioritization with Hardware‐Based Face Tracking

With video compression standards such as MPEG‐4, a transmission error happens in a video‐packet basis, rather than in a macroblock basis. In this context, we propose a semantic error prioritization method that determines the size of a video packet based on the importance of its contents. A video packet length is made to be short for an important area such as a facial area in order to reduce the possibility of error accumulation. To facilitate the semantic error prioritization, an efficient hardware algorithm for face tracking is proposed. The increase of hardware complexity is minimal because a motion estimation engine is efficiently re‐used for face tracking. Experimental results demonstrate that the facial area is well protected with the proposed scheme.     

Structure and processability of iodinated poly(vinyl alcohol). IV. Drawability of the films iodinated at solution before casting

The drawability of iodinated at solution before casting (IBC) polyvinyl alcohol films prepared by casting aqueous solutions of 10 wt % PVA containing 15.2, 39.8, 83.2, 117.0, and 140.1% was examined with a tensile tester at 20–60°C. The tensile behavior of IBC films showed that the yield and breaking loads were much lower, and the breaking elongation was even higher than those of the unoriented iodinated after casting (IAC) films as well as the untreated PVA films. The maximum draw ratios of the films with the weight gain of 15.2, 39.8, 83.2, 117, and 140.1% were 4.5, 5.5, 8.5, 8.0, and 7.5, respectively, which were achieved at 20°C in all. The crystallinity of all films increased by the maximum draw, regardless of crystallinity before drawing. The crystalline structure was recovered to the original PVA crystalline lattice by deiodination. Amorphous orientation and initial moduli increased with the maximum draw ratio, while the orientation of crystals was constant. The orientation and moduli increased up to the weight gain of 83.2%, whose highest draw ratio and initial modulus were 8.5 and of 7.1 GPa, respectively, and then decreased. © 2007 Wiley Periodicals, Inc. J Appl Polym Sci 2008