绿色建筑的意识形态批判

<正>如今建筑界绿色建筑、低碳城市的概念备受推崇。国家大力发展绿色经济、绿色建筑,建设低碳城市,建筑师们则一窝蜂地学习讨论与此概念相关的问题,就连以前对绿色建筑不感冒的众多开发商也开始申报LEED认证和国家绿色建筑认证。针对"绿色建筑热"一直也有批评的声音,但无论是批评者还是拥护者都认为绿色建筑虽有不足之处,可其观念是正确的,出发点是好的,绿色建筑是大势所趋。我的观点相反,绿色建筑某些细枝末节或许可取,但总体上特别在意识形态上是非常值得怀疑的。我们要把自发地追求节约,利用建筑手段改善通风、采光、保温条件,尊重环境的建筑与特定的绿色     

应变纤锌矿ZnO/MgxZn1-xO量子点中离子施主束缚激子的光学性质

Within the framework of the effective-mass approximation and the dipole approximation, considering the three-dimensional confinement of the electron and hole and the strong built-in electric field(BEF) in strained wurtzite Zn O/Mg0:25Zn0:75O quantum dots(QDs), the optical properties of ionized donor-bound excitons(D+, X)are investigated theoretically using a variational method. The computations are performed in the case of finite band offset. Numerical results indicate that the optical properties of(D+, X) complexes sensitively depend on the donor position, the QD size and the BEF. The binding energy of(D+, X) complexes is larger when the donor is located in the vicinity of the left interface of the QDs, and it decreases with increasing QD size. The oscillator strength reduces with an increase in the dot height and increases with an increase in the dot radius. Furthermore, when the QD size decreases, the absorption peak intensity shows a marked increment, and the absorption coefficient peak has a blueshift. The strong BEF causes a redshift of the absorption coefficient peak and causes the absorption peak intensity to decrease remarkably. The physical reasons for these relationships have been analyzed in depth.     

A Preamble Re-utilizing Access Scheme for Machine-Type Communications with Optimal Access Class Barring

Wireless Personal Communications - The existing long term evolution networks originally designed for human-to-human communications are hard to tackle numerous and bursty random access requests from...     

基于密钥共享的分层混合认证模型

随着信息时代的迅速发展,云计算数据访问安全已经成为了用户最关心的问题。身份认证技术是确保参与者在开放的网络环境中实现安全通信的一种重要手段,如何利用身份认证技术为云环境安全保驾护航,成为学者研究的热点。文中通过公钥基础设施(Public Key Infrastructure,PKI)颁发CA证书以在不同云服务间建立信任,将多个采用身份密码体制(Identity-Based Encryption,IBE)的云联合起来；采用分层身份加密体系,引入共享密钥技术,通过选取成环结构,提出一种PKI-IBE混合认证模型方案,并对方案的安全性进行分析,从理论上证明了云环境下PKI-IBE(Public Key Infrastructure-Identity-Based Encryption)同层成环模型提供服务的可行性。同时文中设计了一种基于该模型的签密技术,通过公私密钥对实现云内认证以及跨云认证。安全性理论证明与性能分析表明,该方案在计算量稍增加的前提下,保证了足够的安全性,更加满足云环境下的用户分属不同云域的认证以及用户安全访问的需求,有效解决了云环境中数据访问的安全问题。     

Effects of different carbon sources and C/N values on nonvolatile taste components of Pleurotus eryngii

Pleurotus eryngii, the second largest industrial cultivation mushroom in China, is usually cultivated on substrates mainly consisting of sawdust and corncob. In this study, experiments were performed to determine the effects of different carbon sources and C/N values on nonvolatile taste components of P. eryngii. The effects of different carbon sources on nonvolatile taste components levels revealed that sawdust was beneficial to high levels of crude protein, amino acids, 5′‐nucleotides and equivalent umami concentration, while corncob was beneficial to high contents of carbohydrate, polysaccharides and trehalose. At the similar C/N values, relatively higher sawdust content was beneficial to umami amino acid production, while relatively higher corncob content was beneficial to high contents of carbohydrate, polysaccharides and mannitol. Higher C/N value was beneficial to high levels of crude protein, amino acids, 5′‐nucleotides and equivalent umami concentration, while lower C/N value was beneficial to high contents of carbohydrate, polysaccharides and trehalose. These results provided information for P. eryngii fruit body industrial cultivation to obtain specific nonvolatile taste components with high levels.     

THE effect of Srandom DOPANT fluctuation on threshold voltage and drain current variation in junctionless nanotransistors

We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.