Dynamic nuclear self-polarization of Ⅲ-Ⅴ semiconductors

Ⅲ-Ⅴ semiconductors exhibit dynamic nuclear self-polarization (DYNASP) owing to the contact hyperfine interaction (HFI) between optically excited conduction electrons and lattice nuclei.In the self-polarization process at a low temperature,electron spin state and the nuclear polarization (magnetization) exchange a positive feedback,increasing energy splitting of the conduction electron states,thereby a large nuclear polarization.This phenomenon was theoretically predicted previously for conduction electrons excited linearly and elliptically polarized light.The polarization of the conduction electrons was represented by a parameter α in a formula for nuclear polarization (Eq.(9) in Ref.[1]);however,the effect of external magnetic fields on the nuclear polarization was not considered.Therefore,this study introduces this effect by further extending the previous studies.Herein,α'represents the combination of the effects of elliptically polarized electrons and an external magnetic field,which is used in the equations presented in previous studies.When α'=0,a large nuclear polarization is obtained below critical temperature Tc,but no polarization occurs above Tc.When α'＞ 0,the nuclear polarization is enhanced above Tc.Below Tc,the nuclear polarization follows a hysteresis curve when α'is partially manipulated by adjusting the degree of the polarization of the exciting laser.     

A new wastewater treatment technology for mixed acid drainagecontaining fluorine

A new environment-friendly wastewater treatment technology was developed for the treatment of mixed acid drainage containing fluorine. The ordinary wastewater system using “slaked lime” is ineffective at removing fluorine; besides, it cannot decompose “hard-type surfactants” in the wastewater, so the amount of generated sludge and the quality of treated wastewater are not at the satisfactory level. This newly developed wastewater system uses microorganisms and calcium carbonate to treat the industrial wastewater that contains strong chemicals such as acids, bases, and hydrogen peroxide. By changing the structure and construction of the treatment tanks, it is possible to treat calcium carbonate and microorganisms at the same time and decompose hard-type surfactants. This greatly contributes to improved water quality, saves resources, and reduces greenhouse gas emissions to one third those of the old system     

A high fill factor and progressive scan PtSi Schottky-barrier IR-CCD image sensor using new wiring technology

A back surface illuminated 130/spl times/130 pixel PtSi Schottky-barrier (SB) IR-CCD image sensor has been developed by using new wiring technology, referred to as CLOSE Wiring, CLOSE Wiring, designed to effectively utilize the space over the SB photodiodes, brings about flexibility in clock line designing, high fill factor, and large charge handling capability in a vertical CCD (VCCD). This image sensor uses a progressive scanned interline-scheme, and has a 64.4% fill factor in a 30 /spl mu/m/spl times/30 /spl mu/m pixel, a 3.9 mm/spl times/3.9 mm image area, and a 5.5 mm/spl times/5.5 mm chip size. The charge handling capability for the 3.3 /spl mu/m wide VCCD achieves 9.8/spl times/10/sup 5/ electrons, The noise equivalent temperature difference obtained was 0.099 K for operation at 120 frames/sec with a 50 mm f/1.3 lens.<>     

Two-dimensional numerical simulation of side-gating effect in GaAsMESFETs

Two-dimensional device simulations that confirm that the side-gating effect in GaAs MESFETs occurs on semi-insulating substrates containing hole traps are discussed. A negative voltage applied on a side gate, a separate n-type doped region, causes an increase in the thickness of the negatively charged layer at the FET channel interface in the substrate, through hole emission from hole traps. The FET channel current is modulated by the electron depletion of the n-type channel, which results from the compensation for the extension of the negatively charged layer at the n-i interface into the i-substrate containing hole traps. The magnitude of the drain current reduction is determined by the total acceptor concentration in the substrate and the donor concentration of the channel. However, the magnitude is independent of the side-gate distances     

Threshold voltage uniformity and characterization of microwaveperformance for GaAs/AlGaAs high electron-mobility transistors grown onSi substrates

We report on DC and microwave characteristics for high electron-mobility transistors (HEMT's) grown on Si substrates by metal-organic chemical vapor deposition (MOCVD). Threshold voltage (V _th) distribution in a 3-in wafer shows standard deviation of V_th (σV_th) of 36 mV with V_th of -2.41 V for depletion mode HEMT's/Si and σV_th of 31 mV with V_th of 0.01 V for enhancement mode, respectively. The evaluation of V_th in a 1.95×1.9 mm² area shows high uniformity for as-grown HEMT's/Si with σV_th of 9 mV for V_th of -0.10 V, which is comparable to that for HEMT's/GaAs. Comparing the V_th distribution pattern in the area with that for annealed HEMT's/Si, it is indicated that the high uniformity of V_th is obtained irrelevant of a number of the dislocations existing in the GaAs/Si. From microwave characteristic evaluation for HEMT's with a middle-(10~50 Ω·cm) and a high-(2000~6000 Ω·cm) resistivity Si substrate using a new equivalent circuit model, it is demonstrated that HEMT's/Si have the disadvantage for parasitic capacitances and resistances originated not from the substrate resistivity but from a conductive layer at the Si-GaAs interface. The parasitic parameters, especially the capacitances, can be overcome by the reduction of electrode areas for bonding pads and by the insertion of a dielectric layer under the electrode, which bring high cut-off frequency (f_T) and maximum frequency of operation (f_max) of 24 GHz for a gate length of 0.8 (μm). These results indicate that HEMT's/Si are sufficiently applicable for IC's and discrete devices and have a potential to be substituted for HEMT's/GaAs     

Improved selective growth of InP around dry-etched mesas by metalorganic chemical vapor deposition at low growth temperature

A comparative study has been carried out regarding selective embedding growth of InP by metalorganic chemical vapor deposition (MOCVD) around dry-etched mesas, using two types of reactors: a conventional horizontal type and a highspeed rotating-susceptor type. In the case of the conventional horizontal-type MOCVD, overgrowth on the mask was observed when the growth temperature was low (600°C). On the other hand, an almost planar grown surface without such overgrowth was achieved by using the high-speed rotating-susceptor MOCVD for a wide range of growth temperatures, especially even at a low growth temperature of 580°C. Regarding the high-speed rotating-susceptor MOCVD, we have also investigated the effects of dopants on the growth behaviors and have found a remarkable difference between n-type S-doped and p-type Zn-doped InP in the growth behaviors. The mechanism for suppressing overgrowth in case of the high-speed rotating-susceptor MOCVD, as well as the cause for the different effects between the dopants, are discussed.     

High-mobility strained-Si PMOSFET's

Operation and fabrication of a new high channel mobility strained-Si PMOSFET are presented. The growth of high-quality strained Si layer on completely relaxed, step-graded, SiGe buffer layer is demonstrated by gas source MBE. The strained-Si layer is characterized by double crystal X-ray diffraction, photoluminescence, and transmission electron microscopy. The operation of a PMOSFET is shown by device simulation and experiment. The high-mobility strained-Si PMOSFET is fabricated on strained-Si, which is grown epitaxially on a completely relaxed step-graded Si_0.82Ge_0.18 buffer layer on Si(100) substrate. At high vertical fields (high |V_g|), the channel mobility of the strained-Si device is found to be 40% and 200% higher at 300 K and 77 K, respectively, compared to those of the bulk Si device. In the case of the strained-Si device, degradation of channel mobility due to Si/SiO₂ interface scattering is found to be more pronounced compared to that of the bulk Si device. Carrier confinement at the type-II strained-Si/SiGe-buffer interface is clearly demonstrated from device transconductance and C-V measurements at 300 K and 77 K     

An analysis of a waveguide T junction with an inductive post

The authors analyze the T junction with an inductive post, taking its diameter into account for the case where the current distribution is assumed on the surface of the post. A single cylindrical post placed in a T junction improves the impedance matching and compensates the junction discontinuity in a wide frequency band. The effects of the design parameters, such as the diameter of the post and its location, are clarified. The measured return loss is accurately predicted. On the basis of this analysis, an effective design procedure for the T junction is proposed, and the reflection below -30 dB is realized over 4% bandwidth     

An improved procedure of electron microscopic in situ hybridization for detecting adenovirus DNA

Electron microscopic in situ hybridization (EM-ISH) is a useful method in determining the localization of a specific nucleic acid at the ultrastructural level. Since the EM-ISH protocol includes many steps, no standard protocol for EM-ISH is available yet. In this study, we optimized quantitatively the critical conditions with respect to embedding resin, nucleic acid labeling and hybridization reaction time, by using adenovirus-infected cells as the indicator cells. The optimal detection of an adenovirus-specific nucleic acid was obtained by overnight hybridization reaction on sections embedded in Lowicryl K4M resin. Random-primed-labeled probes improved the reactivity. At least 60% of virus particles in paracrystalline arrays was found to contain viral DNA. These arrays in adenovirus-infected cells are useful in evaluating quantitatively the efficiency of protocols of EM-ISH.     

Generation of pedestal-free 22-fs ultrashort pulse using highly nonlinear fiber and reverse-dispersion fiber

We present an all-fiber system for generating pedestal-free 22-fs ultrashort pulses with a single-peak spectrum. High-power Raman soliton pulses and a normally dispersive highly nonlinear fiber are used to generate a smooth, broadened single-peak spectrum. Then, the higher order dispersion is compensated for using a hybrid fiber composed of a reverse-dispersion fiber and a standard single-mode fiber, which allows pedestal-free ultrashort pulses to be successfully generated. To our knowledge, this is the first demonstration of pedestal-free 20-fs-class ultrashort pulse generation without spectral distortion using an all-fiber configuration.