Design of Fully Balanced Analog Systems Based on Ordinary and/or Modified Single-Ended Opamps

The system architectures, which allow a high performance fully balanced (FB) system based on ordinary/modified single-ended opamps to be implemented, are investigated and the basic and general requirements are formulated. Two new methods of an FB analog system design, which contribute towards achieving both a high performance IC system implementation and a great reduction of the design time are presented. It is shown that a single-ended system based on any type of opamp (rail-to-rail, constant g _m , etc.), realized in any technology (CMOS, bipolar, BiCMOS, GaAs), can be easily and effectively converted to its FB counterpart in a very practical way. Using the proposed rules, any FB system implementation with opamps (data converter, modulator, filter, etc.) requires only a single-ended system version design and the drawbacks related to a conventional FB system design are avoided. The principles of the design are pointed out and they are verified by experimental results.     

High-performance organic field-effect transistors with binary ionic liquids

High-performance rubrene single-crystal field-effect transistors are developed with binary ionic liquid electrolytes used for gating. Inclusion of small amount of inorganic salts in the ionic liquids enhances the degree of dissociation for the organic ions and accelerates formation of the electric-double-layers in response to the gate voltage. High carrier mobility of 2.9 cm²/Vs is achieved in the rubrene single-crystal transistors with the mixture ionic liquid. In addition to the advantage of the low-voltage operation due to concentrated field in ultra-thin electric-double-layers, drastically increased capacitance at above 100 Hz makes the technique of the ionic liquid gating more attractive for fast-switching devices.     

Fabrication method for IC-oriented Si single-electron transistors

A new fabrication method for Si single-electron transistors (SETs) is proposed. The method applies thermal oxidation to a Si wire with a fine trench across it on a silicon-on-insulator substrate. During the oxidation, the Si wire with the fine trench is converted, in a self-organized manner, into a twin SET structure with two single-electron islands, one along each edge of the trench, due to position-dependent oxidation-rate modulation caused by stress accumulation. Test devices demonstrated, at 40 K, that the twin SET structure can operate as two individual SET's. Since the present method produces two SET's at the same time in a tiny area, it is suitable for integrating logic circuits based on pass-transistor type logic and CMOS-type logic, which promises to lead to the fabrication of single-electron logic LSIs     

300 ps switching of spontaneous emission by quantum confined fieldeffect in a light emitting triode

A high-speed switching, as fast as 300 ps, of spontaneous emission is achieved in the recently developed quantum-confined field-effect light emitting triode. As a result of the combination of the field control of radiative life time with modulation of carrier-generation rate, the light intensity modulation does not rely on changes in carrier population at all but on the field control of the radiative life time in the quantum well structure of the device. Elaborated is the allowance for the deviation of the modulation depth of injection current from an optimum value in the modulation scheme     

Negative giant surface potential of vacuum-evaporated tris(7-propyl-8-hydroxyquinolinolato) aluminum(III) [Al(7-Prq)3] film

Negative giant surface potential was realized in a vacuum-evaporated film of tris(7-propyl-8-hydroxyquinolinolato) aluminum(III) [Al(7-Prq)₃]. Electroabsorption response of the film presented an inverted polarity to that of tris(8-hydroxyquinolinolato) aluminum (Alq₃), suggesting opposite noncentrosymmetry of molecular orientation. Asymmetric dice model with molecular geometric effect has been proposed, and propyl substitution at 7 position of the ligands was indicated to affects the molecular posture on the surface to invert the polarity of noncentrosymmetry. Our results opened a new possibility of controlling molecular orientation in a film for device applications.     

Budding of fowlpox and pigeonpox viruses at the surface of infected cells

Chick embryo fibroblasts and chorioallantoic membranes infected with fowlpox virus (FWPV) or pigeonpox virus (PPV) were examined by transmission and scanning electron microscopy. Immature virus particles were observed in finely granular areas, i.e. virus factories, of the cytoplasm. These particles had various forms depending on their stages of development. Many tubular structures were also seen in these regions. Mature virus particles with ellipsoidal or brick-shaped forms enclosing electron-dense cores were detected throughout the cytoplasm. Notably, there was a high frequency of virus budding at the cell surface, but only occasional virus wrapping in the cytoplasm. Another remarkable feature of the infected cells was accumulation of many virions just beneath the plasma membrane, indicating that this phenomenon is closely related to virus budding. Based on the observed frequency of budding, this mechanism seems to be the predominant way for FWPV and PPV to exit the cell.     

L-band Er3+-doped fluorophosphate glass-fibre amplifier

The first L-band EDFA to employ fluorophosphate glass as the host glass material has been realised. The lowest fibre loss yet reported for fluorophosphate glass fibre of 0.7 dB/m is achieved. The amplifier achieved a flat gain with an average value of 21.7 dB in the L-band.     

Effects of Heavy Element Substitution on Electronic Structure and Lattice Thermal Conductivity of Fe2VAl Thermoelectric Material

By using first-principles cluster calculations, we identified that Ta or W substitution for V is useful for decreasing the lattice thermal conductivity of the Fe₂VAl Heusler alloy without greatly affecting the electron transport properties. It was clearly confirmed that the Fe₂(V_1?x Ta _x )Al_0.95Si_0.05 (x?=?0, 0.025, 0.05), Fe₂(V_0.9?x Ta _x Ti_0.1)Al (x?=?0, 0.10, 0.20), and Fe₂(V_0.9?2x W _x Ti_0.1+x )Al (x?=?0, 0.05, 0.10) alloys indeed possessed large Seebeck coefficient regardless of the amounts of substituted elements, while their lattice thermal conductivity was effectively reduced. As a result of partial substitution of Ta for V, we succeeded in increasing the magnitude of the dimensionless figure of merit of the Heusler phase up to 0.2, which is five times as large as the Ta-free compound.     

A bidirectional common polarization control method for coherentoptical FDM transmission system

A bidirectional common polarization control method with a single polarization controller for a coherent optical FDM bidirectional transmission system is discussed. This method is promising for realizing a reliable and low-cost terminal in a coherent multichannel distribution system because the polarization controller can be placed in common only at a central office. Theoretical and experimental results show that the frequency separation δf has to be 6×bit rate<δf<120/Δτ (GHz) for FSK bidirectional transmission. The method is effective not only for reducing the complexity of the subscriber terminal but also for improving the reliability in a coherent CATV system