Atherogenic effect of oxidized products of cholesterol

Cholesterol under certain in vitro and possibly in vivo conditions may be oxidized to oxysterols, which are suspected of being initiators of atherosclerotic plaques. Oxysterols inhibit HMG-CoA reductase activity resulting in a decreased cholesterol concentration in the cell membrane, which leads to endothelial membrane injury and probable premature cell death. Exogenous oxidation of cholesterol in human tissues under certain unusual conditions is highly probable. Dietary oxysterols are absorbed in the gastrointestinal tract and are selectively transported by the athrogenic lipoproteins LDL and VLDL. The oxysterols cholestanetriol and 25-OH cholesterol have been shown to be atherogenic. Oxysterols are commonly found in dried egg products, powdered milk, cheeses and in a variety of high temperature dried animal products.     

Contact-Barrier Free,High Mobility,Dual-Gated Junctionless Transistor Using Tellurium Nanowire

The gate-all-around nanowire transistor, due to its extremely tight electrostatic control and vertical integration capability, is a highly promising candidate for sub-5 nm technology nodes. In particular, the junctionless nanowire transistors are highly scalable with reduced variability due to avoidance of steep source/drain junction formation by ion implantation. Here a dual-gated junctionless nanowire p-type field effect transistor is demonstrated using tellurium nanowire as the channel. The dangling-bond-free surface due to the unique helical crystal structure of the nanowire, coupled with an integration of dangling-bond-free, high quality hBN gate dielectric, allows for a phonon-limited field effect hole mobility of 570 cm² V⁻¹ s⁻¹ at 270 K, which is well above state-of-the-art strained Si hole mobility. By lowering the temperature, the mobility increases to 1390 cm² V⁻¹ s⁻¹ and becomes primarily limited by Coulomb scattering. The combination of an electron affinity of ≈ 4 eV and a small bandgap of tellurium provides zero Schottky barrier height for hole injection at the metal-contact interface, which is remarkable for reduction of contact resistance in a highly scaled transistor. Exploiting these properties, coupled with the dual-gated operation, we achieve a high drive current of 216 μA μm⁻¹ while maintaining an on-off ratio in excess of 2 × 10⁴. The findings have intriguing prospects for alternate channel material based next-generation electronics.     

S-band erbium-doped silica fibre amplifier with flattened-gain ofover 21 dB

A gain-flattened erbium-doped silica fibre amplifier (EDSFA) has been developed for amplifying WDM signals in the S-band. The EDSFA exhibits a signal gain of over 21 dB, a gain excursion of less than 1.9 dB, and a noise figure of less than 6.7 dB in the 1491-1518 nm wavelength range     

Limit of gate oxide thickness scaling in MOSFETs due to apparentthreshold voltage fluctuation induced by tunnel leakage current

We report on a new roadblock which will limit the gate oxide thickness scaling of MOSFETs. It is found that statistical distribution of direct tunnel leakage current through 1.2 to 2.8 nm thick gate oxides induces significant fluctuations in the threshold voltage and transconductance when the gate oxide tunnel resistance becomes comparable to gate poly-Si resistance. By calculating the measured tunnel current based on multiple scattering theory, it is shown that the device characteristics fluctuations will be problematic when the gate oxide thickness is scaled down to less than 1 nm     

Design of Fully Balanced Analog Systems Based on Ordinary and/or Modified Single-Ended Opamps

The system architectures, which allow a high performance fully balanced (FB) system based on ordinary/modified single-ended opamps to be implemented, are investigated and the basic and general requirements are formulated. Two new methods of an FB analog system design, which contribute towards achieving both a high performance IC system implementation and a great reduction of the design time are presented. It is shown that a single-ended system based on any type of opamp (rail-to-rail, constant g _m , etc.), realized in any technology (CMOS, bipolar, BiCMOS, GaAs), can be easily and effectively converted to its FB counterpart in a very practical way. Using the proposed rules, any FB system implementation with opamps (data converter, modulator, filter, etc.) requires only a single-ended system version design and the drawbacks related to a conventional FB system design are avoided. The principles of the design are pointed out and they are verified by experimental results.     

High-performance C60 and picene thin film field-effect transistors with conducting polymer electrodes in bottom contact structure

C₆₀ and picene thin film field-effect transistors (FETs) in bottom contact structure have been fabricated with poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) electrodes for a realization of mechanical flexible organic FETs. The C₆₀ thin film FETs showed n-channel enhancement-type characteristics with the field-effect mobility μ value of 0.41 cm² V^?1 s^?1, while the picene thin film FET showed p-channel enhancement-type characteristics with the μ of 0.61 cm² V^?1 s^?1. The μ values recorded for C₆₀ and picene thin film FETs are comparable to those for C₆₀ and picene thin film FETs with Au electrodes.     

BEOL工艺统合Integration--low-k Dual/Damascene的形成

1简介 当前,从成膜方法来讲,ILD loW-k材料大致上分为两类:一类是以SiCOH为代表的CVD(化学气相淀积)膜,另一类是SOD(旋转涂层)膜,它包括有机的、无机的和SiCOH.     

Observation of polarization property in near-field optical imaging by a polarization-maintaining fiber probe

We fabricated an original near-field scanning optical microscopy (NSOM) fiber probe made of polarization-maintaining and attenuation-reducing (PANDA)-type polarization-maintaining optical fiber, and observed the polarization property of propagation light in a polymer optical waveguide. The distribution of the transmission coefficient in polarization angles through this NSOM probe showed that the linear polarization is maintained in the two crossing directions: the fast and slow axes. The polarization degree parallel to the slow axis decreases from 1000:1 to 2:1 by bending the fiber probe and the decrease is independent of the bending direction. Using this PANDA-type NSOM probe, we investigated the polarization property of periodic intensity modulation. It was found that the intensity modulation was observed clearly with the electric vector parallel to the radius direction of the waveguide, but was observed vaguely with the electric vector perpendicular to the radius direction.     

Use of support vector regression and numerically predicted cloudiness to forecast power output of a photovoltaic power plant in Kitakyushu,Japan

The development of a methodology to forecast accurately the power produced by photovoltaic systems can be an important tool for the dissemination and integration of such systems on the public electricity grids. Thus, the objective of this study was to forecast the power production of a 1‐MW photovoltaic power plant in Kitakyushu, Japan, using a new methodology based on support vector machines and on the use of several numerically predicted weather variables, including cloudiness. Hourly forecasts of the power produced for 1 year were carried out. Moreover, the effect of the use of numerically predicted cloudiness on the quality of the forecasts was also investigated. The forecasts of power production obtained with the proposed methodology had a root mean square error of 0.0948 MW h and a mean absolute error of 0.058 MW h. It was also found that the forecast and measured values of power production had a good level of correlation varying from 0.8 to 0.88 according to the season of the year. Finally, the use of numerically predicted cloudiness had an important role in the accuracy of the forecasts, and when cloudiness was not used, the root mean square error of the forecasts increased more than 32%, and the mean absolute error increased more than 42%. Copyright © 2011 John Wiley & Sons, Ltd.     

Development of a 385–500 GHz Sideband-Separating Balanced SIS Mixer

A submillimeter (385–500 GHz) low-noise sideband-separating balanced SIS (Superconductor Insulator Superconductor) mixer (Balanced 2SB mixer) with high IRR (Image Rejection Ratio) has been successfully developed, whose SSB (Single SideBand) noise temperature is ～ 200 K (10hf/k) with an image rejection ratio of ≥?～10 dB. Balanced mixers have become a promising technology which would break through the limitation especially in terahertz receivers and heterodyne arrays. However, though there are examples in microwave with relatively worse noise performance, submillimeter and terahertz balanced mixers have rarely been developed in spite of their astronomical importance. The developed balanced 2SB mixer is not only the first one demonstrated at submillimeter frequency range, but also has very low noise, high IRR, wide detectable frequencies (385–500 GHz), and a flat IF output spectrum. The balanced 2SB mixer is composed of three RF hybrids, four DSB (Double SideBand) mixers, two 180° IF hybrids, and an IF quadrature hybrid. Several important performance indicators such as noise temperature, IRR, required LO (Local Oscillator) power, and IF spectra were measured. The measured LO power required for the balanced 2SB mixer was typically ~ 14 dB less than that of the single-ended mixers.