Characterization and electrochemical properties of CF4 plasma-treated boron-doped diamond surfaces

The effect of CF₄ plasma etching on diamond surfaces, with respect to treatment time, was investigated using scanning electron microscopy (SEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and electrochemical measurements. SEM observations and Raman spectra indicated an increase in surface roughening on a scale of 10–20 nm, and an increase in crystal defect density was apparent with treatment time in the range of 10 s to 30 min. In contrast, alteration of the diamond surface terminations from oxygen to fluorine was found to be rather rapid, with saturation of the F/C atomic ratio estimated from XPS analysis after treatment durations of 1 min and more. The redox kinetics of Fe(CN)₆^3−/4− was also found to be significantly modified after 10 s of CF₄ plasma treatment. This behavior shows that C–F terminations predominantly affect the redox kinetics compared to the effect on the surface roughness and crystal defects. The double-layer capacitance (C_dl) of the electrolyte/CF₄ plasma-treated boron-doped diamond interface was found to show a minimum value at 1 min of treatment. These results indicate that a short-duration CF₄ plasma treatment is effective for the fabrication of fluorine-terminated diamond surfaces without undesirable surface damage.     

A Nonvolatile Organic Memory Device Using ITO Surfaces Modified by Ag‐Nanodots

We report on a single‐layer organic memory device made of poly(N‐vinylcarbazole) embedded between an Al electrode and ITO modified with Ag nanodots (Ag‐NDs). Devices exhibit high ON/OFF switching ratios of 10⁴. This level of performance could be achieved by modifying the ITO electrodes with some Ag‐NDs that act as trapping sites, reducing the current in the OFF state. Temperature dependence of the electrical characteristics suggest that the current of the low‐resistance state can be attributed to Schottky charge tunnelling through low‐resistance pathways of Al particles in the polymer layer and that the high‐resistance state can be controlled by charge trapping by the Al particles and Ag‐NDs.     

Real-time measurement of pointing action by using DSP

This paper presents an approach of measuring in real-time the vector of finger that is pointing to an object. DSP is used in the operation processing unit in order to do the real-time processing. The steps include the extraction of flesh-colored regions from an image, the labeling of the flesh-colored regions, and the detection of two characteristic positions on the finger so that the direction that the finger is pointing at will be calculated. The entire process takes about 29 msec, which makes it possible to have the frame rate of 34 fps. With this frame rate, this measurement approach is considered real-time and promising to be merged into other application systems. This work was presented in part at the 13th International Symposium on Artificial Life and Robotics, Oita, Japan, January 31–February 2, 2008     

Construction of the plasmid PMEX8-HAK1 and random site-directed mutagenesis of human cytosolic adenylate kinase

The pMEX8-hAK1 vector was devised from the pAK plasmid (Kim J. H. et al., 1989, Protein Engineering 5, 379-386), which could directly express human adenylate kinase proteins without recombination and its single strand DNA could be withdrawn with helper phage for random site-directed mutagenesis. The conserved key residues at Lys21, Lys27, and Thr39 were engineered to obtain mutants for kinetic analysis. Three mutants were obtained as K21P, K27R, and T39S, their specific activities were strikingly reduced compared to those of wild type adenylate kinase. This pMEX8-hAK1 will be a powerful tool for site-directed mutagenesis to detect the substrate-enzyme interaction for human adenylate kinase including various other enzymes.     

An equation of state for 1,1-difluroethane (HFC 152a)

An equation of state for 1,1-difluoroethane (HFC 152a, CH₃CHF₂) has been developed on the basis of reliable experimental data including PVT, liquid C_p, and saturated-liquid-density data measured by our group. It is a non-dimensionalized virial equation whose functional form is the same as that originally developed for 1,1,1,2-tetrafluoroethane (HFC 134a) in our group. The effective range is for pressures up to 15 MPa, temperatures from 230 to 450 K, and densities to 1000 kg m⁻³. The equation represents reliable PVT measurements within ± 1% in pressure for the superheated vapour and supercritical fluid, while within ±0.5% in density for the compressed liquid. In addition, it should be noted that the equation represents the other essential thermodynamic properties including vapour pressures, saturated-liquid/ vapour densities, isobaric/isochoric specific heats and sound velocity in both the liquid and gaseous phase of HFC 152a.     

New balance ground relay for parallel four-circuit transmission lines

A 66-kV network generally is grounded through a neutral grounding resistor. In this network a single-phase ground-fault current is limited to as small as 100 to 400 A. There are parallel four-circuit transmission lines mounted on the same tower in the 66-kV network. In such transmission lines, the load and the fault currents could induce circulating current that flows through the lines. Since the circulating current has zero-phase-sequence and negative-phase-sequence components, it could cause unwanted operation of a balance ground relay using zero-phase-sequence current. However, it is difficult to compensate for the circulating current by the conventional vector compensation scheme. This paper presents a new balance ground relay to deal with the circulating current. In the relay from the ground-fault inception until first tripping, the difference current Δ3I_2d of negative-phase-sequence current 3I_2d of the differential current between two protected lines is used as an input current. The Δ3I_2d is the difference current of 3I_2d between, before and during faults. After the first tripping, the difference current of positive-phase-sequence load current and zero-phase-sequence current of the forementioned differential current are used as an input current. Consequently, a higher sensitivity of the ground-fault protection for these lines has been achieved. The correct operation of the new balance ground relay was confirmed when a single-phase-ground-fault occurred in the parallel four-circuit transmission lines, to which the relay is applied.     

Air vent in water chamber and surface coating on liner slides concerning auxiliary cooling system for the high temperature engineering test reactor

Experimental study was made to confirm the validity of new designs of the auxiliary cooling system for the high temperature engineering test reactor (HTTR). First, it is necessary to vent residence air in outlet side of water chamber of the auxiliary heat exchanger for the HTTR. Accordingly, we have proposed to mount a proper bend duct in the outlet side of the water chamber. Air vent is done by difference between pressures at both ends of the bend duct caused by the forced water circulation using the water pumps. From flow tests, it was confirmed that it is capable of venting the air through the bend duct by circulating the water in maximum capacity of the water pumps. Second, it is essential to prevent seizure and excessive wear of the liner slides of the auxiliary concentric hot gas duct for the HTTR at a service temperature of 950°C. Therefore, we have put forward to coat titanium nitride (TiN) on the surface of the liner slides made of nickel-based superalloy Hastelloy XR using the thermochemical vapor deposition method. As a result of seizure and wear tests, it was confirmed that the TiN coating film of 3 μm on the surface of Hastelloy XR is sufficient.     

Boron removal by titanium addition in solidification refining of silicon with Si-Al melt

In order to effectively remove B from Si for its use in solar cells, a process involving B removal by solidification refining of Si using a Si-Al melt with Ti addition was investigated. For clarifying the effect of Ti addition on B removal from the Si-Al melt, TiB₂ solubilities in Si-64.6 at. pct Al melt at 1173 K and Si-60.0 at. pct Al melt at 1273 K were determined by measuring the equilibrium concentrations of B and Ti in the presence of TiB₂ precipitates. The small solubilities of TiB₂ in the Si-Al melt indicate the effective removal of B from the Si-Al melt by Ti addition. Further, solidification experiments of Si-Al alloys containing B by Ti addition were performed, and the effect of Ti addition on the solidification refining of Si with the Si-Al melt was successfully confirmed.     

The gamma-ray-induced crosslinking of polyacrylamide

The gamma-ray-induced crosslinking of polyacrylamide was carried out under various conditions. The molecular weight of the polymer before inrradiation was found to be the most important factor for crosslinking. When polymers have low molecular weights such as 80,000, the intensity of radiation, the external pressure applied, and the water content of the polymer powder became important for crosslinking. Although the polycrylamide hydrogel can be obtained directly by irradiating the monomer, it was obtained more conveniently by the irradiation of monomer—polymer mixtures. The hydrogels obtained by the radiation with a dose of over 50 kgray, absorb water by 1000–1500 wt %.     

Analysis of XANES for identification of highly dispersed transition metal oxides on supports

XANES of vanadium and niobium oxide on silica or alumina have been analyzed quantitatively by a deconvolution technique. Based on the results for reference compounds, local structures of supported vanadium and niobium species were identified. The composition was estimated from difference spectra for the samples which consisted of two kinds of species.