Capacity of practical wireless multihop broadcast networks

In a wireless multihop broadcasting scenario, a number of relay nodes may cooperate the source node in order to improve the capacity of the network. However, the imposition of total energy and maximum hop constraints to this system in a practical setting. In this paper, we study an ad-hoc network with infinitely many nodes and analytically find the number and positions of rebroadcasting relay nodes to achieve the optimal broadcast capacity. The interference due to multiple transmissions in the same geographical area is taken into account. According to the results of this theoretical model, we propose two heuristics, one distributed and one centralized, as suboptimal but practical solutions to the relay selection problem in wireless multihop broadcasting. We discuss the broadcast capacity performances and CSI (channel state information) requirements of these algorithms. The results illustrate that the benefits of peer-assisted broadcasting are more pronounced in the centralized relay selection algorithm when compared to the fully randomized and distributed selection under a realistic system model.     

英国海上油气矿业权出让经验及其对中国发展路径的启示

中国海上油气资源丰富,发展潜力巨大。探索合理的海上油气矿业权出让制度改革路径,可有效促进我国对深海油气的开发,助力能源革命战略的推进。英国有着丰富的海上油气勘探开发经验,其合理的油气矿业权出让制度可为我国提供借鉴和参考。为此,采用规范分析、实证分析和经验制度分析相结合的方法,从油气开发的国家战略和法律体系、矿业权出让的主要制度设计等方面,对英国的海上油气矿业权出让制度进行了剖析。进而提出了我国海上油气矿业权出让制度的发展路径及改革建议:(1)从完善油气矿业权出让的顶层制度设计、建立油气区块的信息库制度、优化制度中程序设计、加强评委资质管理等4个方面着手,建构完善的油气矿业权出让体系;(2)放宽海上油气矿业权的勘查开发门槛,鼓励多种主体、国际、资本与技术间的联合开发与联合投标;(3)设置海上油气开发的监管机构;(4)设置跨部门的企业信用积分体系。     

基于熵权法的储层非均质性定量评价——以珠江口盆地A油田为例

珠江口盆地流花礁灰岩油藏的储集条件复杂、非均质性强。综合珠江口盆地A油田地震、测井、沉积和地质等资料,分析其礁灰岩储层的沉积微相、隔夹层等对储层非均质性的影响;进而在相控条件约束下,利用熵权法对储层非均质性进行定量评价,并建立不同约束条件下的随机储层非均质综合评价模型。实例研究结果显示,该方法可以定量表征储层质量参数和几何形态参数;综合储层非均质综合评价模型与油藏动态资料,确定研究区储层非均质综合指数为0.5~0.7的区域为剩余油分布潜力区,且剩余油主要富集于研究区礁体西北翼、东南翼以及靠近西南翼断层的构造高部位。在剩余油分布潜力区部署9口水平井,均获得较高的平均日产油量,与ODP设计日产油量相比,提高至少50 m~3/d,且平均含水饱和度上升较缓慢,剩余油分布潜力区具有较长的稳产时间。因此,利用熵权法对礁灰岩储层非均质性进行定量评价的结果基本可以表征其储层的非均质特征。     

Electrical characteristics of low temperature-Al0.3Ga0.7As

In this work, we present electrical characterizations of n⁺ GaAs/low temperature (LT)-Al_0.3Ga_0.7As/n⁺ GaAs resistor structures in which the LT layers are grown at nominal substrate temperatures of 250 and 300°C. The resistivity and V_tfl parameters of these LT-Al_0.3Ga_0.7As layers are compared with those of LT-GaAs and Al_0.3Ga_0.7As grown at a normal growth temperature of 720°C. Low-temperature Al_0.3Ga_0.7As layers exhibit resistivities as high as 10¹² ohm-cm, nearly four orders of magnitude higher than that of LT-GaAs, and V_tfl values as high as 45 V, over twice that of LT-GaAs. We also find that the LT-Al_0.3Ga_0.7As materials grown at 250 and 300°C appear to show opposite and contradictory trends with respect to resistivity and V_tfl. We propose that this result can be explained by residual hopping conduction in the 250°C material. Temperature dependent conductivity measurements confirm the presence of a hopping mechanism in LT-Al_0.3Ga_0.7As grown at 250°C and yield activation energies of 0.77 and 0.95 eV for LT-GaAs and LT-Al_0.3Ga_0.7As, respectively.     

环形孔径对部分相干光光谱的影响

本文推导了部分相干光在经过环形孔径之后,远场轴上点的光谱S(ω)与环形孔径处光的光谱S~(0)(ω)之间的关系。数值计算结果表明,S(ω)不仅依赖于S~(0)(ω),而且还与环形孔径处光的相干性以及环形孔径的参数有关。     

人工神经网络处理光纤阵列传感信号的原理,结构及其仿真结果

人工神经网络技术作为机敏材料与结构的关键技术之一，在国外已受到人们的关注。本文探索将人工神经网络技术应用于光纤阵列传感信号处理中的原理、结构及应用于材料与结构损伤估计的方法。给出了适应于此，已用程序实现的两种神经网络模型的仿真处理结果。     

Recessed-gate AlGaAs-InGaAs-GaAs pseudomorphic HEMT withSi-planar-doped etch stop layer

An improved slot etch technique based on an Si planar doped layer has been applied to gate recessing in the fabrication of AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors (HEMTs). The devices exhibited comparable g_m with much better breakdown and leakage behaviour than conventional pseudomorphic HEMT devices     

Design optimization of ARROW-type diode lasers

Antiresonant reflecting optical wavelength (ARROW)-type diode lasers have been optimized for high-power, single-spatial-mode operation. Calculated modal behavior predicts strong intermodal discrimination with low loss for the fundamental ARROW mode. Single-lobe far-field operation is obtained only when the high-index reflecting (antiresonant) cladding layers correspond to an optical thickness of λ₁ (m+3/4), where λ is the lateral (projected) wavelength of the leaky wave in the high-index layers, and m is an integer (m=0, 1,. . .). Experimental results include stable, single-spatial mode operation to 500-mW peak pulsed power and 300-mW CW power at an emission wavelength of 0.98 μm     

光泵用大功率半导体激光器列阵

本文报导工作波长适合于泵浦掺Nd固体激光器的GaAIAs/G&As激光锁相列阵。采用氧化物掩蔽和Zn扩散条形结构工艺,获得了十单元列阵器件。其工作波长为809±5nm,输出功率大于200mW。已用于Nd∶YAG和Nd玻璃激光器的泵浦。     

Simulating process-induced gate oxide damage in circuits

Advanced processing techniques such as plasma etching and ion implantation can damage the gate oxides of MOS devices and thus pose a problem to circuit reliability. In this paper, we present a simulator which predicts oxide failure rates during and after processing and pinpoints strong charging current locations in the layout where changes can be made to improve circuit hot-carrier reliability. We present the models and experimental results used to develop the simulator and demonstrate the usefulness of this simulator