A transmit/receive IF chip set for WCDMA mobiles in 0.35 /spl mu/m CMOS

An implementation of the IF section of WCDMA mobile transceivers with a set of two chips fabricated in an inexpensive 0.35-/spl mu/m two-poly three-metal CMOS process is presented. The transmit/receive chip set integrates quadrature modulators and demodulators, wide dynamic range automatic gain control (AGC) amplifiers, with linear-in-decibel gain control, and associated circuitry. This paper describes the problems encountered and the solutions envisaged to meet stringent specifications, with process and temperature variations, thus overcoming the limitations of CMOS devices, while operating at frequencies in the range of 100 MHz-1 GHz. Detailed measurement results corroborating successful application of the new techniques are reported. A receive AGC dynamic range of 73 dB with linearity error of less than /spl plusmn/2 dB and spread of less than 5 dB for a temperature range of -30/spl deg/C to +85/spl deg/C in the gain control characteristic has been measured. The modulator measurement shows a carrier suppression of 35 dB and sideband/third harmonic suppression of over 46 dB. The core die area of each chip is 1.5 mm/sup 2/.     

A framework for reconfigurable computing: task scheduling and context management-a summary

Reconfigurable computing is consolidating itself as a real alternative to ASICs (Application Specific Integrated Circuits) and general-purpose processors. The main advantage of reconfigurable computing derives from its unique combination of broad applicability, provided by the reconfiguration capability, and achievable performance, through the potential parallelism exploitation. The key aspects of the scheduling problem in a reconfigurable architecture are discussed, focusing on a task scheduling methodology for DSP and multimedia applications, as well as the context management and scheduling optimizations.     

What decides: high mortality in paediatric acute renal failure?

Forty paediatric cases of A.R.F. (Acute Renal Failure) of various aetiology were included in the study. 60% of patients were less than 4 years of age with male predominance. 80% cases reported to us very late with oligoanuria of more than 24 hours (2-7 days). Diarrhoea, vomiting and fever were other dominant symptoms. Maximum cases were severely anaemic (87.5%) with mean Hb 7.73 +/- 1.9 gm%. 40% cases were of underweight while only one case (2.5%) was of over weight, inspite of volume excess in 40% cases. All 24 cases, who were estimated for serum albumin, found to have marked hypoalbuminemia. Mortality was found to be as high as 65% inspite of effective peritoneal dialysis in all cases. High mortality seems to be due to profound anuria of many days (because of marked delay in reaching the hospital), fever and malnutrition besides other factors as aetiology.     

Electron energy distribution at the insulator-semiconductorinterface in AC thin film electroluminescent display devices

Electron emission from insulator-semiconductor interface in ZnS:Mn ac thin film electroluminescent (ACTFEL) display devices was investigated by studying the current and field waveforms. A new technique for measuring the interface electron energy distribution at insulator-semiconductor interfaces was developed. The technique involves the measurement of tunnel current transients and can be used to study the interface electron energy distribution between any insulator-semiconductor pair with which an ac thin film test structure can be fabricated. It was applied to a ZnS:Mn display device at two temperatures of 10 K and 300 K and to a metal interface device structure     

Generating optimal adaptive fuzzy-neural models of dynamicalsystems with applications to control

The paper describes an approach to generating optimal adaptive fuzzy neural models from I/O data. This approach combines structure and parameter identification of Takagi-Sugeno-Kang (TSK) fuzzy models. We propose to achieve structure determination via a combination of modified mountain clustering (MMC) algorithm, recursive least squares estimation (RLSE), and group method of data handling (GMDH). Parameter adjustment is achieved by training the initial TSK model using the algorithm of an adaptive network based fuzzy inference system (ANFIS), which employs backpropagation (BP) and RLSE. Further, a procedure for generating locally optimal model structures is suggested. The structure optimization procedure is composed of two phases: 1) locally optimal rule premise variables subsets (LOPVS) are identified using MMC, GMDH, and a search tree (ST); and 2) locally optimal numbers of model rules (LONOR) are determined using MMC/RLSE along with parallel simulation mean square error (PSMSE) as a performance index. The effectiveness of the proposed approach is verified by a variety of simulation examples. The examples include modeling of a nonlinear dynamical process from I/O data and modeling nonlinear components of dynamical plants, followed by tracking control based on a model reference adaptive scheme (MRAC). Simulation results show that this approach is fast and accurate and leads to several optimal models     

The impact of single-wafer processing on semiconductor manufacturing

In this paper, we have described the importance of single-wafer processing (SWP) in semiconductor manufacturing. As compared to batch processing, reduced cycle time, better control of surface and interface properties, and reduced defect densities are some of the attractive features of SWP. We have provided the example of new SWP tools that have the answers to address virtually all process integration issues in dealing with new materials as well as conventional materials in ultra small dimensions. Driven by reduced I/O pitches, and emergence of system-on-chip, system-in-package or system-on-package as the driver of semiconductor growth, SWP tools have started to play an important role in the surface cleaning in IC assembly and packaging. Global acceptance of SWP in manufacturing can address the supply chain problem of the semiconductor industry.     

Chemical Interactions in Diboride-Reinforced Oxide-Matrix Composites

Thermochemical analyses of interfacial reactions in titanium, zirconium, and hafnium diboride reinforced oxidematrix composites have been carried out to evaluate the chemical compatibility. The chemical reactivity of these diborides with oxygen and the high volatility of B₂O₃( l ) at reduced oxygen pressures are concerns during processing and operating conditions. The thermochemical stability and the vaporization behavior of B₂O₃( l ) are discussed in terms of partial pressures of dominant gaseous species of the boron-oxygen system at 1700 and 2300 K. The TiB₂/ZrO₂ and TiB₂/HfO₂ systems are thermodynamically stable in a limited oxygen pressure range. The TiB₂/Al₂O₃ system is stable, but the reactions in this system may apparently be accompanied by formation of gaseous products (B₂O₃, AlO, Al₂O, and lower boron oxides) in the presence of elemental oxygen. These thermochemical considerations are very useful in evaluating the effectiveness of oxides as diffusion barrier coatings on diboride reinforcements.