Prediction of ultrasonic wave velocity in particleboard and fiberboard

Ultrasonic wave velocities were determined at parallel and perpendicular to manufacturing direction and at the interval angles of 15° in clockwise and counterclockwise directions of particleboard and fiberboard. The experimental results were compared with the predicted values using some empirical formulae such as Hankinson and Jacoby equations. The results showed that the ultrasonic wave velocity were the highest in parallel direction in particleboard and fiberboard and decreases with increase of angle and the lowest values occurred in perpendicular direction. The predicted ultrasonic velocity using Hankinson and Jacoby equations are in close agreement with the measured values. Relationship between ultrasonic wave velocities and particles and fibers angle could be successfully presented by cubic and quadratic regression equations as well.     

Preparation of gold nanoparticles (GNP) aqueous suspensions by a new method involving Tiron

A new method is proposed to produce gold nanoparticles (GNP) by in situ reduction of a gold salt dissolved in water. The reducing agent used is Tiron instead of the citrate anion most often mentioned in literature. The influence of various parameters has been investigated, such as the content of Tiron with respect to that of the precursor of gold HAuCl₄, or the initial pH of the solution after mixing of reactants. It is shown that Tiron also exerts a positive influence as a dispersant, which impedes agglomeration of gold nanoparticles. The typical average size of GNP synthesized in the present work is close to 7 nm.     

蓝牙技术在某型飞机机载火控故障诊断系统中的应用研究

蓝牙技术是一种短距离无线通信技术,具有低成本、低功耗、灵活、快速、抗干扰能力强等特点,目的是取代终端的连接电缆.为提高部队的作战效能,采用蓝牙技术和计算机测量与控制技术,研制了机载火控故障诊断系统;该系统在实际应用中取得了良好效果,并具有诊断结果准确、自动化程度高、工作稳定可靠、操作简便、易于转移和维护等优点,为技术人员进行机载火控系统的性能检测与故障诊断提供了便利.     

Reverse short channel effects in high-k gated nMOSFETs

Anomalous threshold voltage roll-up behavior, commonly referred as reverse short channel effect (RSCE), has been observed in high-k (HfO₂ on SiON buffer, Al₂O₃ on SiON buffer) gated submicron nMOSFETs, while the SiO₂ or SiON control samples show normal short channel effect (SCE) behavior. The possible causes such as inhomogeneous channel doping profile and gate oxide thickness variation near S/D ends have been ruled out. The results indicate that interface trap density that dependents on channel length is the main cause of the RSCE observed here. In addition, oxide charge also plays a role.     

Grazing incidence reflection absorption Fourier transform infrared (GIRA-FTIR) spectroscopic studies on the ferroelectric behavior of poly(vinylidene fluoride–trifluoroethylene) ultrathin films

Grazing incidence reflection absorption Fourier transform infrared (GIRA-FTIR) spectroscopy was used to characterize the ferroelectric behavior of a thin poly(vinylidene fluoride–trifluoroethylene) P(VDF–TrFE) copolymer. The lab-built GIRA-FTIR apparatus allowed the heating and corona poling process to be carried out whilst collecting the GIRA spectra of the thin polymer film. The Curie transition from the ferroelectric to paraelectric phase was confirmed from the abrupt change in intensity of the 849 cm⁻¹ band in the RA-FTIR spectrum. It was found that the Curie temperature dropped dramatically when the film thickness was lowered to below a certain critical value of approximately 100 nm. The switching of the CF₂ dipoles in the ferroelectric crystals after applying the external electric field could be determined by monitoring the change in the 849 cm⁻¹ band intensity. For the 600 nm thick P(VDF–TrFE) film, the switching of the dipoles appears to occur almost instantaneously, while the kinetics of dipole switching of the 75 nm thick film were significantly retarded. The repeated switchability of the CF₂ dipoles upon the application of a bipolar cyclic electric field was also confirmed. The bistability of the film due to remnant polarization was also confirmed from the absorbance of the 849 cm⁻¹ band after removing the applied voltage during corona poling.     

Stimulation of negative magnetoresistance by an electric field and light in silicon doped with boron and manganese

It is experimentally ascertained that light stimulates the negative magnetoresistance observed in a high electric field in silicon doped with boron and manganese. The optimum conditions (the electric field, temperature, illumination, and resistivity of the material) for observation of the largest magnitude of negative magnetoresistance in (Si:B):Mn are determined. The dependence of the negative magnetoresistance on the concentration of compensating impurity is established.