Novel one-step route for synthesizing sub-micrometer PSt hollow spheres via redox interfacial-initiated method in inversed emulsion

Interfacial-initiated polymerization of styrene (St) was carried out in inversed emulsion with cumene hydroperoxide (CHPO) and ferrous sulfate (FeSO₄)/disodium ethylenediaminetetraacetate (NaEDTA)/sodium formaldehyde sulfoxylate (SFS) as the redox initiation system. The water-soluble Fe²⁺-NaEDTA-SFS acted as the reducing component and the oil-soluble CHPO as the oxidant component of the redox initiation system. Therefore, the primary radicals were produced mainly at the oil/water interface to initiate the polymerization of St. Thus, sub-micrometer hollow polystyrene (PSt) spheres were obtained by one-stage polymerization, which was supported by the techniques of transmission electron microscopy (TEM) and field emission scanning electron microscopy (FESEM).     

单壁碳纳米管的制备及生长特性研究

采用Fe/MgO作为催化剂 ,催化裂解CH4制备了较纯的单壁碳纳米管 ,用TEM和Raman对碳纳米管进行了表征 ,对不同生长温度下制备的碳纳米管Raman径向呼吸振动峰 (RBM)进行了分析 ,研究了生长温度对单壁碳纳米管生长特性和结构特性的影响     

TPS/TDC3000系统串口通讯的规划与应用

针对TPS/TDC30 0 0系统串口通讯方式、机理进行了一般性的介绍 ,对规划与应用中常见的的问题 ,根据实际工程应用经验提出了解决方案。     

Long-wavelength infrared photoinduced switching of a resonanttunneling diode using the intersubband transition

Voltage switching induced by long-wavelength infrared light from a CO₂ laser was observed using a double-barrier resonant tunneling diode (RTD) biased in the bistable region and the intersubband transition (IT) between the quantum confined states. Possible optoelectronic and all-optical switching applications involving hysteresis are proposed and discussed     

Effect of magnesium content on the ageing behaviour of water-chilled Al-Si-Cu-Mg-Fe-Mn (380) alloy castings

A study of the effect of magnesium concentration on the ageing behaviour as measured by the hardness of 380 alloy was conducted for three levels of magnesium, namely 0.06 (base alloy), 0.33 and 0.5 wt%, for water-chilled castings (dendrite arm spacing ∼ 10–15 μm). Differential scanning calorimetry analysis of as-cast samples was carried out to determine the changes in the reactions of the phases obtained during alloy solidification, employing heating rates of 0.1 and 1.0°Cs⁻¹, up to approximately 700°C. Two heat treatments were applied to the as-cast alloys: T5 comprising ageing at 25 (room temperature), 155, 180, 200 and 220°C, for times up to 200 h, and T6 comprising solution heat treatment at 480 °C or 515°C for 8 h, followed by quenching in warm water at 60°C, followed by immediate artificial ageing at 155 or 180°C for varying times up to 100h. The results show that the higher hardness values obtained with T6 treatment can be explained by the excess precipitation of magnesium-containing phases in the as-solidified alloys. This precipitation could be eliminated under the high cooling-rate conditions prevalent in die-casting operations so that T5 treatment may be used to replace T6 treatment to produce the same hardness values. In addition, solution heat treatment in the low-temperature range (480–515°C) is adequate to produce the required changes in silicon morphology and dissolution of magnesium in the matrix. No significant difference in hardness behaviour was observed when the magnesium content was increased beyond 0.3 wt%.     

First-principles study of the tensile and fracture of the Al/TiN interface

Employing the density functional theory, we investigate the tensile and fracture processes of the Al/TiN(0 0 1) interface. The simulation presents directly the strain–stress relationship, the ideal tensile strength and the process of bond breaking of the system. Through the analysis of deformation, we find that the softer Al layers deform larger than the harder TiN layers during the tensile process. And fracture occurs between the interface and the sub-interface Al layers. In addition, the results show that during the tensile process, the ripple of the interfacial TiN layer decreases gradually with the increment of the strain. Charge transfer was detected from the Al to TiN layers near the interface area during the tensile process by means of charge density and density of states analyses. The charge transfer affects the fracture process. Compared to our previous study of the Al/TiN(1 1 1) interface, the Al/TiN(0 0 1) interface has smaller work of adhesion and larger tensile strength than the Al/TiN(1 1 1) interface. Our investigation shows that the fractures of the Al/TiN(0 0 1) and (1 1 1) interface systems both happen in the Al layers near the interface.