Chemical vapor deposition of amorphous ruthenium-phosphorus alloy films

Chemical vapor deposition growth of amorphous ruthenium-phosphorus films on SiO₂ containing ∼ 15% phosphorus is reported. cis-Ruthenium(II)dihydridotetrakis-(trimethylphosphine), cis-RuH₂(PMe₃)₄ (Me = CH₃) was used at growth temperatures ranging from 525 to 575 K. Both Ru and P are zero-valent. The films are metastable, becoming increasingly more polycrystalline upon annealing to 775 and 975 K. Surface studies illustrate that demethylation is quite efficient near 560 K. Precursor adsorption at 135 K or 210 K and heating reveal the precursor undergoes a complex decomposition process in which the hydride and trimethylphosphine ligands are lost at temperatures as low at 280 K. Phosphorus and its manner of incorporation appear responsible for the amorphous-like character. Molecular dynamics simulations are presented to suggest the local structure in the films and the causes for phosphorus stabilizing the amorphous phase.     

Microstructure and fatigue characteristics of direct chill cast and electromagnetic cast 2024 Al alloy ingots

The distinct advantages of the electromagnetic casting (EMC) process consist in the presence of stirring motions in the melt, which lead to significant grain size reduction in solidified ingot. Furthermore, surface and subsurface qualities are improved due to the absence of ingot mold. However, it is impossible to achieve the aforementioned advantages in conventional direct chill casting (DCC). In order to contrast the before and after heat treatments of the microstructural and mechanical characteristics of EMC and DCC 2024 aluminium alloys, optical microscopy, scanning electron microscopy, transmission electron microscopy (TEM), X-ray diffractions (XRD), differential scanning calorimetry (DSC), etc. were carried out. Compared with the DCC ingot, the EMC ingot has better mechanical properties not only in the ascast condition but also in the as-aged condition. The DSC curves show that the EMC specimens have high enthalpy, i.e., the thermal kinetic energy to form precipitates during the aging treatment process. Despite heat treatments applied to the DCC ingot, it fails to attain the same mechanical properties as the EMC ingot. Moreover, considering the expernsive scalping operation for DCC ingots, the EMC technique, which offers a lower manufacturing cost, is one of the best manufacturing methods used in obtaining the ingots of wrought aluminum alloys.     

At least N+1 finite transmission zeros using frequency-variant negative source-load coupling

A second-order cross-coupled combline filter which has three finite transmission zeros is presented. The problem of the frequency-invariant coupling in a real circuit is introduced. To make extra transmission zeros, a top metalized dielectric block is used.     

The stress-whitened damage zone of PVC blends

The stress-whitened damage zone that formed ahead of a semicircular notch during slow tensile loading has been measured from optical micrographs of translucent blends of poly(vinyl chloride) (PVC) with experimental chlorinated polyethylene (CPE) resins. When the zone was small, the plane strain condition applied and from the elastic stress distribution a constant mean stress condition was found at the boundary of the crescent-shaped zone. The critical mean stress did not depend on the chlorine content or the chlorine distribution of the experimental CPE resin used in the blend. While the critical mean stress decreased as the amount of CPE in the blend was increased, the critical volume strain, calculated from the bulk modulus, was independent of composition and was thought to be the controlling parameter for stress-whitening. When the zone was larger, the shape was qualitatively described by concepts of stress redistribution in the presence of a plastic zone ahead of the notch. Macroscopic flow and necking were only detected near the maximum in the stress-displacement curve.     

DC and AC characteristics of sub-50-nm MOSFETs with source/drain-to-gate nonoverlapped structure

A MOSFET structure with a nonoverlapped source/drain (S/D) to gate region was proposed to overcome the challenges in sub-50-nm CMOS devices. Key device characteristics were investigated by extensive simulation study. Fringing gate electric field through the spacer induces an inversion layer in the nonoverlap region to act as an extended S/D region. An oxide spacer is used to reduce parasitic gate overlap capacitance. A reasonable amount of inversion electrons were induced under the spacers. Internal physics, speed characteristics, short channel effects, and RF characteristics were studied with the nonoverlap distance at a fixed metallurgical channel length of 40 nm. The proposed structure had good drain-induced barrier lowering and V/sub T/ rolloff characteristics and showed reasonable intrinsic gate delay and cutoff frequency compared to those of an overlapped structure.     

A typed functional extension of logic programming

A logic language is suitable for specification if it is equipped with features for data abstraction and modularization. In this paper, an effective mechanism to incorporate function and type into logic programming is presented as the means to embed data abstraction mechanism into logic programming. This incorporation is essentially based on Horn clause logic with equality and a polymorphic type system that is an extension of Mycroft and O’Keefe’s system. This paper also presents an implementation based on Warren Abstract Machine (WAM) and shows the performance, along with a comparison with WAM.     

Synthesis and characterization of poly(siloxane-urethane)s

A series of polyurethane block copolymers based on hydroxy-terminated polydimethylsiloxane and poly(propylene glycol) soft segments of molecular weights 1818 and 2000, respectively, were synthesized. The hard segments consisted of 4,4′-diphenylnethane diisocyanate and 1,4-butanediol as the chain extender. Samples with different molar ratios were prepared. We tried to synthesize polydimethylsiloxane-based polyurethanes (PDMS-PU) containing a hard block as major fraction and a soft block as minor fraction for preparing toughened rigid systems. After a study of the pure polydimethylsiloxane-based polyurethane and poly(propylene glycol)-based polyurethane (PPG-PU), (mixed polyol)-based block copolymers and blends of PDMS-PU and PPG-PU were synthesized, and characterized by means of differential scanning calorimetry, tensile testing and scanning electron microscopy. In (mixed polyol)-based copolymers and lower hard-segment content blends, macro-phase separation occurred, but blends with higher hard-segment contents showed significant reduction in amounts of phase separation.     

New queueing strategies employing service interval-based priority for real-time communications in atm networks

In this paper, we propose queueing strategies employing the service interval-based priority (sip) which can provide delay-bounded, and loss-free services, while maximizing bandwidth utilization in the atm network. We also describe a variation of the sip, the residual service interval-based priority (rsip) which can achieve almost full utilization by assigning priorities dynamically on the basis of the residual service interval. We store the realtime cells belonging to different connections in logically separated queues, and for each queue, we set a parameter called service interval, during which only one cell is allowed to be transmitted. The sip server takes and transmits the head-of-line (hol) cell of the queue which has the smallest service interval, while the rsip server selects the queue with the smallest residual service interval. When there is no eligible real-time cell, it transmits non-real-time cell, thus enabling a maximized bandwidth utilization. Employing the above queueing strategies, we analyze the delay characteristics deterministically with the leaky bucket bounded input traffic and then dimension the optimal service interval. In dimensioning the service interval and buffer space of each real-time service queue, we consider burstiness of traffic in conjunction with delay constraints, so that bandwidth utilization can get maximized. In addition, we consider the issues of protection from malicious users, average bandwidth utilization, and coupling between the delay bound and the bandwidth allocation granularity.     

Simple ASK transmitter using a 790 nm self-pulsating laser diodefor local area networks

A simple amplitude shift keying (ASK) optical link is demonstrated by using a low-cost self-pulsating laser diode and an envelope detector for a low-cost broadband local area network. A link sensitivity of -22 dBm was achieved at 200 Mbit/s. Because the self-pulsation frequency can be tuned by the bias current, frequency division multiplexing can be simply implemented for multiuser applications     

InSb,GaSb, and GaInSb grown using trisdimethylaminoantimony

GalnSb alloys as well as the constituent binaries InSb and GaSb have been grown by organometallic vapor phase epitaxy using the new antimony precursor trisdimethylaminoantimony (TDMASb) combined with conventional group III precursors trimethylindium (TMIn) and trimethylgallium (TMGa). InSb layers were grown at temperatures between 275 and 425°C. The low values of V/III ratio required to obtain good morphologies at the lowest temperatures indicate that the pyrolysis temperature is low for TDMASb. In fact, at the lowest temperatures, the InSb growth efficiency is higher than for other antimony precursors, indicating the TDMASb pyrolysis products assist with TMIn pyrolysis. A similar, but less pronounced trend is observed for GaSb growth at temperatures of less than 500°C. No excess carbon contamination is observed for either the InSb or GaSb layers. Ga_1-xIn_xSb layers with excellent morphologies with values of x between 0 and 0.5 were grown on GaSb substrates without the use of graded layers. The growth temperature was 525°C and the values of V/III ratio, optimized for each value of x, ranged between 1.25 and 1.38. Strong photoluminescence (PL) was observed for values of x of less than 0.3, with values of halfwidth ranging from 13 to 16 meV, somewhat smaller than previous reports for layers grown using conventional precursors without the use of graded layers at the interface. The PL intensity was observed to decrease significantly for higher values of x. The PL peak energies were found to track the band gap energy; thus, the luminescence is due to band edge processes. The layers were all p-type with carrier concentrations of approximately 10¹⁷ cm³. Transmission electron diffraction studies indicate that the Ga_0.5In_0.5 Sb layers are ordered. Two variants of the Cu-Pt structure are observed with nearly the same diffracted intensities. This is the first report of ordering in GalnSb alloys.