A 4.5-GHz 130-nm 32-KB L0 cache with a leakage-tolerant self reverse-bias bitline scheme

This paper describes a 32-KB two-read, one-write ported L0 cache for 4.5-GHz operation in 1.2-V 130-nm dual-V/sub TH/ CMOS technology. The local bitline uses a leakage-tolerant self reverse-bias (SRB) scheme with nMOS source-follower pullup access transistors, while preserving robust full-swing operation. Gate-source underdrive of -220 mV on the bitline read-select transistors is established without external bias voltages or gate-oxide overstress. Device-level measurements in the 130-nm technology show 72/spl times/ bitline active leakage reduction, enabling low-V/sub TH/ usage, 40% bitline keeper downsizing, and 16 bitcells/bitline. 11% faster read delay and 2/spl times/ higher dc noise robustness are achieved compared with high-performance dual-V/sub TH/ bitline scheme. Sustained performance and robustness benefits of the SRB technique against conventional dynamic bitline with scaling to 100- and 70-nm technology is also presented.     

TD-SCDMA技术及市场分析

TD-SCDMA技术优势 2000年5月,在土耳其伊斯坦布尔召开的国际电联大会上,TD-SCDMA被国际电联接纳为第三代移动通信系统标准之一,这标志着中国在移动通信技术领域已经进入世界先进行列.     

Hydrogenated amorphous silicon thin-film transistor arrays fabricated by digital lithography

A jet-printed digital-lithographic method, in place of conventional photolithography, was used to fabricate 64 /spl times/ 64 pixel (300 /spl mu/m pitch) matrix addressing thin-film transistor (TFT) arrays. The average hydrogenated amorphous silicon TFT device within an array had a threshold voltage of /spl sim/3.5 V, carrier mobility of 0.7 cm/sup 2//V/spl middot/s, subthreshold slope of 0.76 V/decade, and an on/off ratio of 10/sup 8/.     

A NEW LARGE CAVITATION CHANNEL IN CHINA SHIP SCIENTIFIC RESEARCH CENTER

1 .　INTRODUCTIONIntherecentdecades ,itisrealizedthatitisquitenecessarytocarryouttestsathighReynoldsnumberwithalowbackgroundnoiselevelinordertomeetmoreandmoreurgentneedsofmodernnavyandmaritimeindustry .Anewlargecavita tionchannelisdevelopedinCSSRCfortestingcompletehull/ propulsor/appendagesarrange ments[1] .Itrepresentsoneofthelatestintechno logicallyadvancedlargecavitationtestfacilities.Inthefollowingsections ,thefeaturesandthefirsttestresultsofthechannelwillbedescribed .2 .　DICRIP…     

Acoustical tomography based on the second-order Born transformperturbation approximation

Reconstruction algorithms and their numerical examples of acoustical tomography based on the second-order Born transform perturbation approximation are presented. The reconstruction algorithms in the second-order Born approximation are similar in form to those in the first-order Born approximation. Replacing the angular spectrum of the scattered wave in the first-order case by the result of applying a first-order operator to the angular spectrum of the scattered wave or applying a second-order operator to the angular spectrum of the incident wave leads to the second-order reconstruction algorithms. Also, comparisons of reconstruction algorithms of the first- and second-order Born approximations are given, and they show that the second-order Born approximation algorithms have a distinct advantage over the first-order approximations in many cases     

SiH4激光等离子体内H谱线的线型研究

本文利用OMA-Ⅲ系统测量了脉冲TEA CO_2激光诱发的SiH_4等离子体发光谱内H巴耳末系的H_α、H_β和H_γ线的线型及线宽。通过理论及实验分析,认为这些谱线的主要加宽机制为Stark加宽。由实验线型和理论线型的拟合得到等离子体的电子温度T≈40000K和电子密度N≈10~(17)cm~(-3)。     

川东地区长兴组缝洞型储层的识别

本文针对四川东部地区上二叠统长兴组(P_2~2)缝洞型储层的低孔、低渗及非均质性等特点,分析了影响这类储层识别的主要因素,提出了利用现有的地球物理测井手段定性识别储层的指标和定量综合识别储层的方法,这可望提高测试成功率。