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991.
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针对老年人和下肢残疾者出行问题,设计了一种无障碍可调节腋支撑的行走助力器,该行走助力器不仅具有新型的腋支撑机构,而且在行走腿前部减少了阻挡构件,延长了使用者的步距,降低了使用者视觉上的障碍恐惧心理。 相似文献
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Unexpected Sole Enol‐Form Emission of 2‐(2′‐Hydroxyphenyl)oxazoles for Highly Efficient Deep‐Blue‐Emitting Organic Electroluminescent Devices 下载免费PDF全文
Bijin Li Guoqiang Tang Linsen Zhou Di Wu Jingbo Lan Liang Zhou Zhiyun Lu Jingsong You 《Advanced functional materials》2017,27(9)
Considerable efforts have been devoted to the development of highly efficient blue light‐emitting materials. However, deep‐blue fluorescence materials that can satisfy the Commission Internationale de l'Eclairage (CIE) coordinates of (0.14, 0.08) of the National Television System Committee (NTSC) standard blue and, moreover, possess a high external quantum efficiency (EQE) over 5%, remain scarce. Here, the unusual luminescence properties of triphenylamine‐bearing 2‐(2′‐hydroxyphenyl)oxazoles ( 3a–3c ) and their applications in organic light‐emitting diodes (OLEDs) are reported as highly efficient deep‐blue emitters. The 3a ‐based device exhibits a high spectral stability and an excellent color purity with a narrow full‐width at half‐maximum of 53 nm and the CIE coordinates of (0.15, 0.08), which is very close to the NTSC standard blue. The exciton utilization of the device closes to 100%, exceeding the theoretical limit of 25% in conventional fluorescent OLEDs. Experimental data and theoretical calculations demonstrate that 3a possesses a highly hybridized local and charge‐transfer excited state character. In OLEDs, 3a exhibits a maximum luminance of 9054 cd m?2 and an EQE up to 7.1%, which is the first example of highly efficient blue OLEDs based on the sole enol‐form emission of 2‐(2′‐hydroxyphenyl)azoles. 相似文献
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Hao Jin Bin Feng Shurong Dong Changjian Zhou Jian Zhou Yi Yang Tianling Ren Jikui Luo Demiao Wang 《Journal of Electronic Materials》2012,41(7):1948-1954
Aluminum nitride (AlN) thin films with c-axis preferred orientation have been prepared by reactive direct-current (DC) magnetron sputtering. The degree of preferred crystal orientation, the cross-sectional structure, and the surface morphology of AlN thin films grown on Si (100) substrates at various substrate temperatures from 60°C to 520°C have been investigated by x-ray diffraction, scanning electron microscopy, and atomic force microscopy. Results show that the substrate temperature has a significant effect on the structural properties, such as the degree of c-axis preferred orientation, the full-width at half-maximum (FWHM) of the rocking curve, the surface morphology, and the cross-sectional structure as well as the deposition rate of the AlN thin films. The optimal substrate temperature is 430°C, with corresponding root-mean-square surface roughness (R rms) of 1.97?nm, FWHM of AlN (002) diffraction of 2.259°, and deposition rate of 20.86?nm/min. The mechanisms behind these phenomena are discussed. Finally, film bulk acoustic resonators based on AlN films were fabricated; the corresponding typical electromechanical coupling coefficient (k t 2 ) is 5.1% with series and parallel frequencies of 2.37?GHz and 2.42?GHz, respectively. 相似文献
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A Cu/Sn-8Zn-3Bi/Cu structure was used to investigate the intermetallic compound (IMC) growth behavior during discontinuous electromigration under current density of 104?A/cm2 at 70°C. Cu5Zn8 IMC formed at both the anode and the cathode interfaces, and the thickness increased with the stressing time. With prolonging the current stressing time, a bulged Cu5Zn8 layer was squeezed out between the former Cu5Zn8 layer and Cu substrate in the samples to relax the excess compressive stress. Additionally, due to the back stress gradient built up by the Sn diffusion, the Zn atomic flux reacted with Cu to form Cu5Zn8 at the cathode side when the power was turned off. Finally, the total IMC thickness of the anode and the cathode under discontinuous current stressing showed a ??reversion?? in the 69?h and 310?h samples. 相似文献
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针对形式化方法对安全协议DoS攻击分析的不足之处,提出了一种基于串空间模型的扩展形式化方法。利用扩展后的形式化方法,对IEEE802.11i四步握手协议进行了DoS攻击分析,发现其的确存在DoS攻击漏洞。通过分析,提出一种可以改善DoS攻击的方法,并通过了扩展形式化方法对于判断安全协议DoS攻击分析的测试规则。最后,根据扩展形式化方法对改进后的四步握手协议进行证明,得出改进后协议可以通过两类DoS测试规则运行至结束。 相似文献