Alkali-metal ion/molecule association reactions and their applications to mass spectrometry

This review will be concerned primarily with thermal alkali-metal ion association reactions of the general type: A+ + M + N reversible (A + M)+ + N. Where A denotes a positively charged alkali metal ion, M is neutral species and N works as a third body. As indicated, most association reactions are reversible, and the A-M bond derives primarily from electrostatic forces whose energy (affinity) is typically 50 kcal/mol or less, often much less. The review includes reaction mechanism, instrumentation, and application to mass spectrometry, together with reaction rates and alkali ion affinities of the classified compounds.     

Study on chemical structures of poly (tetrafluoroethylene-co-perfluoroalkylvinylether) by soft-EB irradiation in solid and molten state

Poly (tetrafluoroethylene-co-perfluoroalkylvinylether) (PFA) was irradiated by soft electron beam (soft-EB) under nitrogen gas atmosphere in solid-state and its molten state, respectively. The changes of thermal property and chemical structures of irradiated PFA in solid-state and molten state were studied by differential scanning calorimetric analysis (DSC) and solid-state ¹⁹F magic angle spinning (MAS) nuclear magnetic resonance (NMR) spectroscopy. By DSC analysis, the melting temperature shifted to lower temperatures, and crystallinity decreased with increasing soft-EB dose. By solid-state ¹⁹F MAS NMR spectroscopy, the new signals was observed and the detected new signals in irradiated PFA at 315 °C and at 30 °C were due to the tertiary carbon group with branching site (Y-type crosslinking site), perfluoro-propylene site and chain end methylene groups, respectively.Moreover, the molar ratio of perfluoroalkylvinylether (FAVE) structure to -CF₂- units decreased with increasing dose.     

An 8.1-ns Column-Access 1.6-Gb/s/pin DDR3 SDRAM With an 8:4 Multiplexed Data-Transfer Scheme

Three circuit techniques for an 8.1-ns column-access 1.6-Gb/s/pin 512-Mb DDR3 SDRAM using 90-nm dual-gate CMOS technology were developed. First, an 8:4 multiplexed data-transfer scheme, which operates in a quasi-4-bit prefetch mode, achieves a 3.17-ns reduction in column-access time, i.e., from 11.3 to 8.13 ns. Second, a dual-clock latency counter reduces standby power by 22% and cycle time from 1.7 to 1.2 ns. Third, a multiple-ODT-merged output buffer enables selection of five effective-resistance values Rtt (20, 30, 40, 60, and 120 Omega) without increasing I/O capacitance. Based on these techniques, 1.6-Gb/s/pin operation with a 1.36-V power supply and a column latency of 7 was accomplished     

Electric Field Distributions of Wearable Devices Using the Human Body as a Transmission Channel

Recently, wearable devices which use the human body as a transmission channel have been developed. However, there has been a lack of information related to the transmission mechanism of such devices in the physical layer. Electromagnetic communication trials using the human body as a transmission medium have more than a decade's history. However, most of the researches have been conducted by researchers who just want to utilize the fact and practically no physical mechanisms have been researched until recently. Hence, in this paper, the authors propose some calculation models of the human body equipped with the wearable devices by using the finite difference time domain (FDTD) method. Moreover, a biological tissue-equivalent solid phantom is utilized to show the validity of the calculation. From these investigations, the authors determine the transmission mechanism of the wearable devices using the human body as a transmission channel.     

ZnO nanostructured film deposition using the separated pulsed laser deposition (SPLD) assisted by electric and magnetic drift motion

We have developed the separated pulsed laser deposition (SPLD) technique to prepare high quality ZnO based films exhibiting uniform and droplet-free properties. This SPLD consists of an ablation chamber and a deposition chamber which can be independently evacuated under different ambient gases.The gas species and the pressures in both chambers can be arbitrarily chosen for the specific deposition such as nanostructured films and nanoparticles. The ablation chamber is a stainless steel globe and the deposition chamber is a quartz tube connected to a metallic conic wall with an orifice. We used a KrF excimer laser with λ = 248 nm and 25 ns pulse duration. The different gas conditions in two chambers allow us to realize optimal control of the plasma plume, the gas phase reaction and the film growth by applying the bias voltage between the conic wall and the substrate under the magnetic field. We can expect that at appropriate pressures the electric and magnetic field motion (E × B azimuthal drift velocity) gives significant influences on film growth.We have deposited ZnO thin films at various pressures of ablation chamber (Pab) and deposition chamber (Pd). The deposition conditions used here were laser fluence of 3 J/cm², laser shot number of 30,000, Pab of 0.67-2.67 Pa (O₂ or Ar), Pd of 0.399-2.67 Pa (O₂), and substrate temperature of 400 °C. Particle-free and uniform ZnO films were obtained at Pab of 0.67 Pa (Ar) and Pd of 1.33 Pa (O₂). The ZnO film showed high preferential orientation of (002) plane, optical band gap of 2.7 eV, grain size of 42 nm and surface roughness of 1.2 nm.     

Visualization of Bubble Nucleation in Boiling 3He

The heat transfer properties of ³He bubbles in the nucleate boiling state have been investigated in liquid ³He below 1.0 K by using the shadowgraph method. The temperature difference between the copper surface and liquid ³He temperature was also measured as a function of heat flux in steady state. The size and number of bubbles departing from the surface in a specific time were compared using photograph recorded by a high-speed video camera at various heat flux and liquid ³He temperature of 0.5, 0.7 and 1.0 K.     

Forced convective heat transfer to supercritical water flowing in tubes

Experimental investigations were made of heat transfer to supercritical water flowing in a horizontal tube and vertical tubes. A comprehensive set of data was obtained for pressures from 226 to 294 bar, bulk temperatures from 230 to 540°C, heat fluxes from 116 to 930 kW/m² and mass velocities from 310 to 1830 kg/m²s. Because the physical properties of supercritical fluids change rapidly with temperature in the pseudocritical region, the heat transfer coefficients show unusual behavior depending upon the heat flux. At low or modetate heat fluxes relatively to the flow rate, a satisfactory correlation was obtained, which predicts reasonably well the enhanced heat transfer coefficients near the pseudocritical point. The several characteristics of the deterioration in heat transfer which occurs at high heat fluxes were clarified, and the limit heat flux for the occurrence of the deterioration was determined in connection with the flow rate.     

1.8-V 800-Mb/s/pin DDR2 and 2.5-V 400-Mb/s/pin DDR1 compatibly designed 1Gb SDRAM with dual-clock input-latch scheme and hybrid multi-oxide output buffer

This paper describes three circuit techniques for a DDR1/DDR2-compatible chip architecture designed for both high-speed and high-density DRAMs: 1) a dual-clock input-latch scheme, which reduces the excessive timing margin for random input commands by using a pair of latch circuits controlled by dual-phase one-shot clock signals, achieves a 0.9-ns reduction in cycle time from 3.05 to 2.15 ns; 2) a hybrid multi-oxide output buffer reduces the area penalty of the output buffer caused by compatible chip design from 1.35% to 0.3%; and 3) a quasi-shielded distributed data transfer scheme enables a 2.6-ns reduction in access time to 10.25 ns in both 2-b and 4-b prefetch operations. By using these techniques, we developed a 175.3-mm/sup 2/ 1-Gb SDRAM that operates as an 800-Mb/s/pin DDR2 or 400-Mb/s/pin DDR1.     

A High Performance LSI Digital Signal Processor for Communication

This paper describes a newly developed CMOS LSI DSP (FDSP3). It has a powerful multiplier, which operates at a rate of 10 M-operations/s, almost twice as fast as the fastest existing LSI DSP's. Some key techniques to attain these high performance characteristics of the DSP are described. Suitable memory capacities of the RAM and ROM were analyzed as a function of the operational capability of the DSP. These were reflected in the design of the FDSP3. To assist in the development of the program, support tools have been developed. A Pascal based cross compiler and an on-line debugging tool are described in some detail.