论现场总线系统及其应用技术

介绍FCS的结构、特点，及其与DCS系统的对照与集成并用。最后简述了以FCS为基础的控制系统与网络系统的构建、形成与开发，并结合我国目前的实际情况提出FCS在应用中要考虑的一些实际问题，及选择FCS的一些建议。     

半导体激光对果蝇的控制效果

为研究半导体激光对水果的主要虫害———果蝇(drosophila melanogaster)的控制效果,采用响应曲面法设计,实验研究了激光功率和照射时间对果蝇的生物学效应。结果表明,用波长为650 nm的半导体激光照射果蝇幼虫,在功率60 mW,照射1282 s条件下,果蝇幼虫的致死率可达到99%以上,且体重降低、羽化延续时间缩短,激光对果蝇幼虫具有较强生物学致死效应。但当功率低于40 mW时,激光对果蝇产生激励作用,促使果蝇的生长发育。继续用原剂量照射第三代果蝇的幼虫,对比发现在连续多代照射后,果蝇后代并没有产生对激光的抗逆性。为半导体激光在水果病虫害控制中的应用提供了实验依据。     

MAX2206～MAX2208功率检测器在CDMA中的应用

本介绍了MAX2206～MAX2208功率检测器的应用和选择方法，以及分析了其功率检测器输出特性。     

通信系统交流不间断供电的设计探讨

重点介绍了由目前在通信系统中大量使用的UPS引发的一系列问题,探讨一种可靠、实用的不间断供电的实现办法;从而满足现代通信技术日益发展的需要,真正实现网络系统的不间断,为广大网络设计人员提供另外一种选择。     

Polysiloxane optical waveguide layer integrated in printed circuit board

A hybrid electrical-optical circuit board is demonstrated using polysiloxane as low-loss and high-temperature stable waveguide material system. After board lamination at 180/spl deg/C for two hours and a subsequent annealing at 230/spl deg/C for 5 minutes the waveguide insertion loss is 0.05 dB/cm at 850 nm wavelength.     

1.55 /spl mu/m bottom-emitting InAlGaAs VCSELs with Al/sub 2/O/sub 3//a-Si thin-film pairs as top mirror

A a 1.55 /spl mu/m InAlGaAs/InP vertical-cavity surface-emitting laser grown by metal-organic chemical vapour deposition is presented. Al/sub 2/O/sub 3//a-Si thin-film pairs and InAlGaAs/InAlAs epitaxial layers are used as a top mirror and a bottom-side output coupler, respectively. Direct modulation characteristics through singlemode fibre are reported at a speed of 2.5 Gbit/s.     

英国未来的SKYLON可重复使用运载器

SKYLON是英国20世纪90年代提出的一种采用涡轮火箭发动机为动力的水平起降、单级入轨运载器,其新颖的轻质结构设计是在吸取了HOTOL可重复使用运载器的经验教训基础上完成的.详述SKYLON的设计方案和采用的"佩刀"(SARBE)发动机方案.     

A comparative study of depth profiling of interface states using charge pumping and low frequency noise measurement in SiO2/HfO2 gate stack nMOSFETs

Charge pumping and low frequency noise measurements for depth profiling have been studied systematically using a set of gate stacks with various combinations of IL and HfO₂ thicknesses. The distribution of generated traps after HCI and PBTI stress was also investigated. The drain-current power spectral density made up all of the traps of IL in 0 < z < T_IL and the traps of HfO₂ in T_IL < z < T_HK. The traps near the Si/SiO₂ interface dominated the 1/f noise at higher frequencies, which is common in SiO₂ dielectrics. For the HfO₂/SiO₂ gate stack, however, the magnitude of the 1/f noise did not significantly change after HCI and PBTI because of more traps in the bulk HfO₂ film than at the bottom of the interface.     

Pattern synthesis for uniform linear array using genetic algorithm and artificial neural network

Multidimensional Systems and Signal Processing - In this paper, we propose a new amplitude-only method for pattern synthesis of uniform linear array (ULA) based on genetic algorithm (GA) and...