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971.
The polymorphic behaviour of a 50/50 blend of tripalmitin and tristearin has been investigated in detail using differential scanning calorimetry and X-ray diffraction. The blend is characterized by a greater tendency to β'-crystallization as compared to the pure triglycerides. Tripalmitin and tristearin, when mixed in a 1:1 ratio, are miscible in both the α-form and the β-form. In the β-form, however, demixing occurs, resulting in a 2-phase solid state. The characteristics of the α-form are considerably affected by the crystallization conditions, due to the formation of concentration gradients during crystallization. The β'-form can be obtained from the melt as well as via recrystallization of the α-form, and is characterized by a much higher stability as compared to the pure triglycerides. The X-ray diffraction data of the β'-form of the blend reveal a β1-crystal structure. The β'-form of the pure triglycerides, however, is characterized by a β'2-crystal structure. On the basis of the present data, however, no clear structural distinction can be made between β'2 and β'1.  相似文献   
972.
Conclusions Measurements have been made on the trends in the formation of heterogeneous plasma flows in a coaxial plasma accelerator as affected by the design and technological parameters.There are large spreads in the thermokinetic and concentration parameters when the powder is supplied to a cylindrical tube in the accelerator. The optimum heterogeneous-flow organization is obtained in a new plasma accelerator design that provides a uniform particle distribution in velocity and concentration in the cross section of the plasma jet and compression of the plasma cloud along the jet. The powder use factor is increased by a factor 1.3-1.5.An Ar+H2 mixture as the plasma-forming gas gives high-grade homogeneous coatings with low porosity.Translated from Fiziko-Khimicheskaya Mekhanika Materialov, Vol. 27, No. 4, pp. 60–66, July–August, 1991.  相似文献   
973.
974.
975.
A detailed study has been made on the use of MeV heavy ions (Z1 = 6–8) for microbeam Rutherford backscattering (RBS) analysis, to improve the depth resolution of this technique. The algorithm for determination of the depth resolution was created and applied to the Zagreb microbeam facility. Theoretical estimates of depth resolution for C and O ion RBS analysis of thin oxide films and semiconductors, using annular silicon surface barrier detector (SSBD), are compared to those for proton backscattering analysis. Depth resolution in certain cases may be improved by increasing the heavy-ion energy. Therefore, by the proper choice of the heavy ion and the heavy-ion energy, the depth resolution may be improved, maintaining the efficiency of the RBS method.  相似文献   
976.
977.
This paper presents an electric arc model that can approximately represent both the static and dynamic characteristics of an arc load controlled by a power electronic circuit. The proposed model was developed from the combination and modifications of the classical Cassie and Mayr equations. The model equations have been expressed in a form suitable for incorporation into circuit simulators employing the nodal analysis method of equation solving. The model has been test-implemented in the Saber circuit simulator. Simulated and experimental results appear to be in good agreement  相似文献   
978.
The authors undertook the Solar System Modeler project to improve comprehension and appreciation of the size, complexity, and splendor of the solar system. To do so, the Solar System Modeler must (1) accurately portray the orbital behavior of satellites, planets, comets, and other celestial bodies, and (2) function in a distributed virtual environment. Additionally, the system needs to: provide a flexible, 3D graphical user interface for immersive operation; assist the user in comprehending the state of the virtual environment; accurately portray the stars and their locations; graphically model all bodies throughout the solar system in 3D and to the same scale; and maintain an interactive frame rate. They describe how they met these requirements  相似文献   
979.
980.
The authors have developed a modified MBE growth process to produce high-gain n-p-n GaAs-AlGaAs heterojunction bipolar transistors (HBTs) with a mean time to failure (MTTF) of 1.5×108 h at 125°C. Beryllium incorporation and diffusion are controlled through a combination of reduced substrate temperature and increased As/Ga flux ratio during MBE growth, resulting in extremely stable HBT profiles. The authors also demonstrate graded InGaAs surface layers with nonalloyed refractory metal contacts that significantly improve ohmic reliability compared to alloyed AuGe contacts. The ability to produce robust HBTs by MBE is critically important to this technology  相似文献   
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