PMMA tacticity and alumina powder dispersion stability

Summary Sedimentation experiments and X-ray photoelectron spectroscopy (XPS or ESCA) analyses have been used to study the effect of poly(methylmethacrylate) (PMMA) tacticity on aluminum oxide powder dispersion stability in a common solvent medium. The relative trends from sedimentation densities, and from surface analyses after solvent washing show that (PMMA) adsorption is greatest with isotactic polymer, where isotactic>atactic>syndiotactic adsorption. These results suggest that surface adsorption and hence dispersion stability can be influenced by polymer chain configuration as well as by chain conformation.     

火电厂实施废水零排放的可行性探讨

对合肥发电厂的用排水现状进行了介绍，并提出了实施废水零排放的可行性方案。     

Dynamic Bending Strains in Planar Trusses with Pinned or Rigid Joints

The method of reverberation ray matrix is applied to analyze the dynamic behavior of structural members in trusses with pinned joints subjected to suddenly applied force. The results are compared with those in planar trusses with rigid joints. Detailed calculations are made with two types of trusses, a small laboratory model made of slender aluminum bars, and a hypothetical real size Pratt truss made of structural steel. It is found that the maximum dynamic bending strains in the members of both types of trusses are very large, comparable with the dynamic axial strains in the same member. The magnitudes of bending strains in the pinned truss differs little from those in the truss with rigid joints for both types of trusses. Such a large dynamic bending strain in a structure member, which is contradictory to the static behavior of the same truss, could be caused by the inertial force of the mass in structural members of the truss.     

Low cycle fatigue and creep behavior of recrystallized Molybdenum near room termperature

The deformation behavior of pure recrystallized molybdenum under cyclic and static loads was investigated in the temperature range between 30°C and 10O°C, for stress amplitudes between 100 MPa and 250 MPa and for static loads up to 200 MPa. The results show that in spite of the low test temperatures and stress levels the Mo material exhibits considerable plastic strains which depend sensitively on frequenez and small changes in temperature.The activation energy deduced for the static and dynamic deformation is less than 0.98 eV which indicates thermally activated processes, to be explained by a dislocation kink model as described in the literature. The low-temperature fatigue behavior appears strongly influenced by creep-fatigue interaction phenomena.     

Non-steady-state model for kinetics of free radical polymerization, 4. Direct thermal initiation

This paper deals with the non-steady-state kinetics of direct thermal initiated polymerization. The initiation is assumed to be a bimolecular reaction of the monomer. The relationship between the radical concentration and the monomer conversion is rigorously derived. In further treatment a few very close approximations are introduced based on the fact that the number of monomer molecules reacting in the initiation step is much less than that consumed in the propagation step for a process producing high polymer, and the value of the rate constant for propagation or chain transfer is much lower than that for chain termination. Expressions for various molecular parameters, such as molecular weight distribution, number-average and weight-average degrees of polymerization, and dispersity, are given. Several numerical examples are provided.     

Observation of atomic steps on CaCO3 crystal surface

By using scanning polarization force microscopy,the deliquescence process and the atomic steps on the cleavage surface of CaCO3 in air were studied in situ.Under an exposure to medium umidity(-57%),the sloiw step movement has been observed.     

混合集成电路激光功能调值技术

本文提出了激光功能微调技术在高精度混合集成电路上的应用，讨论了关键技术问题，并以实例具体说明。该技术的应用为研制高精度混合集成电路开辟了新途径。     

Si/SiGe epitaxial-base transistors. I. Materials, physics, andcircuits

A detailed review of SiGe epitaxial base technology is presented, which chronicles the progression of research from materials deposition through device and integration demonstrations, culminating in the first SiGe integrated circuit application. In part I of this paper, the requirements and processes for high-quality SiGe film preparation are discussed, with emphasis on fundamental principles. A detailed overview of SiGe HBT device design and implications for circuit applications is then presented     

淀积条件对GDa—SiNx薄膜电学特性的影响

本文讨论了用辉光放电法制备氮化硅薄膜时衬底温度、射频功率和气体流量比对薄膜的电导率、介电常数和击穿强度的影响。通过优化生长条件，制备了优质非晶氮化硅薄膜，其介电常数为７．５、击穿强度为５．５ＭＶ／ｃｍ、电导率为１０－１３（Ωｃｍ）－１。