立方相GaN的持续光电导

研究了金属有机物化学气相外延 (MOVPE)方法生长的非故意掺杂的立方相 Ga N的持续光电导效应 .在六方相 Ga N中普遍认为持续光电导效应与黄光发射有关 ,而实验则显示在立方 Ga N中 ,持续光电导效应与其中的六方相 Ga N夹杂有关系 ,而与黄光发射没有关系 .文中提出 ,立方相 Ga N与其中的六方相 Ga N夹杂之间的势垒引起的空间载流子分离是导致持续光电导现象的物理原因 .通过建立势垒限制复合模型 ,解释了立方相 Ga N的持续光电导现象的物理过程 ,并对光电导衰减过程的动力学作了分析 .对实验数据拟合的结果证明以上的模型和推导是与实验相符的 .     

Narrow-band interference rejection in DS/CDMA systems using adaptive (QRD-LSL)-based nonlinear ACM interpolators

An Mth order adaptive lattice filter automatically generates all M of the outputs that would be provided by M separate transversal filters. This feature may effectively suppress narrow-band interference (NBI) of either unknown or time-varying bandwidth (or number of frequency bands) in direct-sequence code-division multiple access systems for which the order of the interference rejection filter that achieves the optimal performance is unknown or constantly changing. Moreover, a lattice filter may significantly outperform its transversal counterpart in complex jamming environments in which the adaptive lattice filter must suppress multiple jammers, since each stage of a lattice filter adapts to suppress an orthogonal component of the NBI. The paper develops a computationally efficient and numerically stable adaptive QR-decomposition-based least squares lattice (QRD-LSL)-based nonlinear approximate conditional mean interpolator to suppress NBI effectively. Simulation results demonstrate that both the signal-to-noise ratio improvement and the convergence rate achieved by the proposed interpolators outperform those of other existing prediction-based techniques.     

离子束混合工艺对材料抗蚀性能的影响

本文介绍了离子束混合工艺方法。与直接注入相比较,离子束混合所使用的设备造价低1/4—1/2,而生产效率可提高1—2个数量级,因而使生产成本大幅度降低,这无疑对离子束工艺的实际应用将产生巨大的促进作用。 通过对轴承材料(GCr15和Cr4Mo4V)经Cr、N、Ta不同元素的混合处理后,在0.5M H_2SO_4和0.1M NaCl的缓冲溶液中的阳极极化曲线表明经混合处理后的两种材料试样,其抗蚀能力和抗点蚀能力均大大提高,这与直接注入的试样效果是一致的。 通过俄歇谱仪和透射电镜的分析结果表明混合是成功的,且在一定的条件下,形成非晶组织。 本文的结论是,无论是离子的直接注入还是离子束混合,对提高轴承材料的抗腐蚀性能都是有效的方法,特别是离子束混合技术具有更大的应用前景。     

Preparation and gas-sensing characteristics of nanocrystalline spinel zinc ferrite thin films

Zinc ferrite is a promising sensor material. In this paper, thin films of nanocrystalline zinc ferrite were deposited on alumina substrates by nebulization of a 0.01-M solution of a mixture of ZnCl/sub 2/ and FeCl/sub 3/ in ethanol (Zn:Fe=1:2) followed by pyrolysis and annealing in flowing air. The resulting films were characterized by X-ray diffraction and scanning electron microscopy, and the gas-sensing properties of as-deposited films were also investigated.     

GaN材料系列的研究进展

ＧａＮ及其合金作为第三代半导体材料具有一系列优异的物理和化学性质，在光电子器件，高温大功率电子器件及高频微波器件应用方面具有广阔的前景，已成为当前高科技领域的研究重点，论述了这种材料的研究历史与发展现状，物理与化学性质，薄膜的生长方法及在光学电子和微电子器件应用于方面的研究进展。     

NMR structure and mutagenesis of the FADD (Mort1) death-effector domain

When activated, membrane-bound receptors for Fas and tumour-necrosis factor initiate programmed cell death by recruiting the death domain of the adaptor protein FADD to the membrane. FADD then activates caspase 8 (also known as FLICE or MACH) through an interaction between the death-effector domains of FADD and caspase 8. This ultimately leads to the apoptotic response. Death-effector domains and homologous protein modules known as caspase-recruitment domains have been found in several proteins and are important regulators of caspase (FLICE) activity and of apoptosis. Here we describe the solution structure of a soluble, biologically active mutant of the FADD death-effector domain. The structure consists of six antiparallel, amphipathic alpha-helices and resembles the overall fold of the death domains of Fas and p75. Despite this structural similarity, mutations that inhibit protein-protein interactions involving the Fas death domain have no effect when introduced into the FADD death-effector domain. Instead, a hydrophobic region of the FADD death-effector domain that is not present in the death domains is vital for binding to FLICE and for apoptotic activity.     

Crystallographic shear planes in nanocrystalline SnO2 thin films by high-resolution transmission electron microscopy

Atomic structures of crystallographic shear planes (CSPs) in nanocrystalline thin films of semiconductor SnO₂ were investigated by high-resolution electron microscopy. The films were prepared by electron beam evaporation in high vacuum (10^–6 torr) and followed by annealing in synthetic air at 700 °C for 1–2 H. CSPs with the displacement vector of [1/2 0 1/2] were observed in the planes parallel to (¯101), (110) and (¯3¯21). Most of the CPSs were found to terminate or interact with each other within SnO₂ crystallites. Partial dislocations exist at terminal places of CSPs or along intersecting lines of CSPs. CSP steps were also observed. Structural models of these defects have been proposed. Based on analysis of experimental data, it has been suggested that the Sn/O ratio at CSPs which are not parallel to their displacement vector, at cores of partial dislocations and at CSP steps, is higher than that of the perfect structure, that is, these defects are able to provide extra free electrons with the films.     

Preparation of Pb(Zr0.52Ti484848)O3 thin films on silicon-on-insulator substrates by excimer laser deposition combined with rapid thermal annealing

In this paper we report the fabrication of ferroelectric Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films on Si-on-Insulator (SOI) substrates with and without an electrode by pulsed excimer laser deposition combined with rapid thermal annealing. Based on the structural and interfacial characteristics analysis by X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), cross-sectional transmission electron microscopy (XTEM) and automatic spreading resistance measurement (ASR), the film structure and orientation were revealed to be dependent on the annealing time and annealing temperature as well as deposition temperature. From RBS spectra and XTEM observation it is shown that the PZT thin films did not interact with the top silicon layers of SOI and that the composition of the film was similar to the target. The ASR measurements showed that the electrical properties of PZT/SOI as well as PZT/Pt/SOI were abrupt, and that the electrical properties of the SOI substrates were still good after the PZT growth.     

半导体激光器用铷D2线光电流谱稳频

本文报导了用铷原子７８００Ａ光电流谱来稳定半导体激光器的工作，在光电流谱线的中部发现了有利于稳频的凹陷，将半导体激光器频率锁定在凹陷的中央，估算的频率稳定度为１ＭＨｚ。     

建立数据库用微机进行钻井液设计

为了更好地指导现场钻井液施工,利用微机建立有关数据库和相应的设计软件,根据地质、工程的要求和井下情况进行钻井液设计,其特点是资料全面、程序运行可靠且操作简便,设计符合现场情况,施工顺利。在千12区块,用微机设计的109口井与人工设计的75口井相比,钻井速度提高,井下复杂情况减少,提高了经济效益。