一种双模双待USB接口数据卡的低功耗设计

针对市场上双模双待消费类电子产品技术解决方案功耗大的缺点,提出了一种新的技术解决方案,该技术方案在降低产品成本的同时,也降低了消费类电子产品的功耗,提高了产品的可靠性和用户体验。     

Comparative study of micro-BGA reliability under bending stress

The micro-ball grid array (/spl mu/BGA), a form of chip scale package (CSP), was developed as one of the most advanced surface mount devices, which may be assembled by ordinary surface mount technology. In the latest /spl mu/BGA type, eutectic tin-lead solder ball bumps are used instead of plated nickel and gold (Ni/Au) bumps. Assembly and reliability of the /spl mu/BGA's PCB, which is soldered by conventional surface mount technology, has been studied in this paper. The bending cycle test (1000 /spl mu//spl epsi/ to -1000 /spl mu//spl epsi/), is used to investigate the fatigue failure of solder joints of /spl mu/BGA, PBGA, and CBGA packages reflowed with different heating factors (Q/sub /spl eta//), defined as the integral of the measured temperature over the dwell time above liquidus (183/spl deg/C). The fatigue lifetime of the /spl mu/BGA assemblies firstly increases and then decreases with increasing heating factor. The greatest lifetime happens while Q/sub /spl eta// is near 500 second-degree. The optimal Q/sub n/ range is between 300 and 750 s/spl deg/C. In this range, the lifetime of the /spl mu/BGA assembly is greater than 4500 cycles if the assemblies are reflowed in nitrogen ambient. SEM micrographs reveal that both /spl mu/ & P-BGA assemblies fail in the solder joint at all heating factors. All fractures are near and parallel to the PCB pad. In the /spl mu/BGA assemblies cracks always initiate at the point of the acute angle where the solder joint joins the PCB pad, and then propagate in the section between the Ni/sub 3/Sn/sub 4/ intermetallic compound (IMC) layer and the bulk solder. In the CBGA assembly reliability test, the failures are in the form of delamination, at the interface between the ceramic base and metallization pad.     

Durable electrochromic coatings prepared from electronically conductive poly(3HT-co-3TPP)-silica hybrid materials

In this paper, a series of organic-inorganic hybrid materials, consisting of heterocyclic conjugated poly(3-hexylthiophene), P3HT, network, and silica particles, were successfully prepared for electrochromic studies. First, the heterocyclic co-polymer of poly[3-hexylthiophene-co-N-(3-trimethoxysilylpropyl) pyrrole], P(3HT-co-3TPP), containing trimethoxysilyl functional groups in the co-polymer backbone as the sol-gel precursor were prepared by conventional oxidative polymerization. Subsequently, P(3HT-co-3TPP)-silica hybrid sol-gel materials in the form of coatings were prepared by baking the microslides and ITO-coated electrodes that had been cast with homogeneous blending solutions containing co-polymer, acid-dopant, tetraethyl orthosilicate (TEOS), and a few drops of water. The microstructures of silica particles formed in the P(3HT-co-3TPP)-silica hybrid materials were investigated by transmission electron microscopy (TEM). The as-prepared hybrid coatings had improved adhesion capability on inorganic glass substrates relative to the pure P3HT on the basis of electrochemical cyclic voltammetric studies and Scotch tape test evaluations. During potential cycling, the film color of P(3HT-co-3TPP)-silica hybrid materials and P3HT coated on ITO electrode changed from orange yellow (i.e., reduced form) to dark blue (i.e., oxidized form) as the redox reactions proceeded. Effects of the material composition of P3HT along with hybrid materials on the electrochemistry, spectroelectrochemistry, thermal stability, and electrical conductivity were also studied.     

Power-amplifier modules covering 70-113 GHz using MMICs

A set of W-band power amplifier (PA) modules using monolithic microwave integrated circuits (MMICs) have been developed for the local oscillators of the far-infrared and sub-millimeter telescope (FIRST). The MMIC PA chips include three driver and three PAs, designed using microstrip lines, and another two smaller driver amplifiers using coplanar waveguides, covering the entire W-band. The highest frequency PA, which covers 100-113 GHz, has a peak power of greater than 250 mW (25 dBm) at 105 GHz, which is the best output power performance for a monolithic amplifier above 100 GHz to date. These monolithic PA chips are fabricated using 0.1-μm AlGaAs/InGaAs/GaAs pseudomorphic T-gate power high electron-mobility transistors on a 2-mil GaAs substrate. The module assembly and testing, together with the system applications, is also addressed in this paper     

Performance evaluation of a joint CDMA/NC-PRMA protocol forwireless multimedia communications

A joint code division multiple access and noncollision packet reservation multiple access (CDMA/NC-PRMA) technique is proposed and investigated as an uplink protocol for the third-generation (3G) mobile systems. Being the underlying time division multiple access (TDMA) architecture of the CDMA transmissions, NC-PRMA enables the base station (BS) to have a centralized control over the slot allocation policy. In order to reduce the multiple access interference (MAI) variation in a CDMA transmission, two different slot assignment schemes, referred to as load-balancing (LB) and power-grouping (PG) schemes, are proposed and evaluated. Simulation results show that considerable improvement can be achieved over the joint CDMA/PRMA scheme, in which the MAI variation is reduced by way of a dynamic permission probability for contending terminals. Especially when an imperfect power control mechanism is considered, the proposed PG assignment scheme achieves significant performance advantages     

The observation of negative transconductance effect caused byreal-space-transfer of electrons in metal oxide semiconductor fieldeffect transistors fabricated with Ta2O5 gatedielectric

N-channel metal oxide semiconductor field effect transistors (MOSFETs) with Ta₂O₅ gate dielectric were fabricated. An intrinsic Ta₂O₅/silicon barrier height of 0.51 eV was extracted from the gate current. The effective Ta ₂O₅/silicon barrier height including image force barrier lowering is about 0.37 eV with drain to source voltage V_DS ranging from 1.5 V to 4.0 V. Due to the low barrier height, negative transconductance effect was observed in the linear region. The decrease of drain current is due to the real space transfer of electrons from the drain terminal to the gate electrode     

USB信息认证器的设计

给出了一种PC使用的USB信息认证外围设备。它使用USB接口,可为电子商务、电子政务提供高强度信息安全保障它基于抗篡改的硬件设计。通过USB接口与计算机相连接,可提供数据完整性、数字签名和数字认证等安全功能。     

卫星天线安装调试综述

目前全国大部分已建好的数字电视平台或正在建设数字电视平台的单位都是把卫星信号作为数字电视平台的基本节目信源。卫星信号接收无论是模拟还是数字信号其接收的方法基本相司无非是数字卫星接收机和模拟卫星接收机基别而已。长期以来．我们在卫星信号接收技术工作中碰到了不少的问题现将这些问题和解决方法罗列出来供同行们参考．     

CPM信号相干解调的神经网络方法研究

本文研究连续相位调制信号相干解调的神经网络方法，提出了基于判决反馈预处理和变换域特征提取的射基函数网络解调方案。通过判决反馈预处理可以有效地减少网络输入信号样本个数，使其具有更好的可分性。利用高采样率下ＣＰＭ信号的相关性，引入变换域的处理方法可以大幅度地降低网络输入信号和样本空间维数。采用射基函数网络作为判决分类器，不仅可以逼近最大似然解调性能，而且无需加噪训练。模拟结果表明：本文提出的方案在降低训练及实现复杂度的同时具有接近最优的误比特性能