Cu CMP工艺中新型低pH碱性抛光液稳定性的研究

Abstract： The stability of a novel low-pH alkaline slurry （marked as slurry A, pH = 8.5） for copper chemical mechanical planarization was investigated in this paper. First of all, the stability mechanism of the alkaline slurry was studied. Then many parameters have been tested for researching the stability of the slurry through comparing with a traditional alkaline slurry （marked as slurry B, pH = 9.5）, such as the pH value, particle size and zeta potential. Apart from this, the stability of the copper removal rate, dishing, erosion and surface roughness were also studied. All the results show that the stability of the novel low-pH alkaline slurry is better than the traditional alkaline slurry. The working-life of the novel low-pH alkaline slurry reaches 48 h.     

新型碱性精抛液对300mm铜膜全局平坦化的影响

The copper removal rate and uniformity of two types copper slurries were investigated, which was performed on the 300 mm chemical mechanical planarization （CMP） platform. The experiment results illustrate that the removal rate of the two slurries is nearly the same. Slurry A is mainly composed ofa FA/OI1 type chelating agent and the uniformity reaches to 88.32%. While the uniformity of slurry B is 96.68%, which is mainly composed of a FA/OV type chelating agent. This phenomenon demonstrates that under the same process conditions, the uniformity of different slurries is vastly different. The CMP performance was evaluated in terms of the dishing and erosion values. In this paper, the relationship between the uniformity and the planarization was deeply analyzed, which is mainly based on the endpoint detection mechanism. The experiment results reveal that the slurry with good uniformity has low dishing and erosion. The slurry with bad uniformity, by contract, increases Cu dishing significantly and causes copper loss in the recessed region. Therefore, the following conclusions are drawn： slurry B can improve the wafer leveling efficiently and minimize the resistance and current density along the line, which is helpful to improve the device yield and product reliability. This investigation provides a guide to improve the uniformity and achieve the global and local planarization. It is very significant to meet the requirements for 22 nm technology nodes and control the dishing and erosion efficiently.     

印刷电路板图像模式识别研究

近年来,基于计算机与图像处理技术进行的PCB(印刷电路板)缺陷自动视觉检测的研究开始成为PCB检测的热门方向.图像识别是一门跨学科的前沿技术,近年来取得了突飞猛进的发展,在PCB检测系统中图像识别就是通过对PCB图像进行运算、比较而判断出待测PCB是否为错误板的过程,就是图像处理的最终目的.本文应用数学形态学的知识对P...     

基于Laplace先验的Bayes压缩感知波达方向估计

基于多任务贝叶斯压缩感知(BCS)理论,该文提出一种使用Laplace先验的目标到达角(DOA)估计算法。该算法利用阵元输出为观测值,将DOA估计转化为Laplace先验约束下的BCS求解稀疏信号问题,使用Laplace先验获得比传统BCS更好的稀疏性。该算法不需要信源个数的先验信息和进行特征值分解,能够适应相干信源场景,仿真结果表明该算法具有比传统BCS方法和经典MUSIC算法更好的DOA估计性能。     

基于异构集成技术的相控阵T/R组件微系统

基于硅基微电子机械系统(MEMS)工艺和三维异构集成技术,研制了一款硅基X波段2×2相控阵T/R组件.该组件采用收发一体多功能芯片方案,将所有器件封装于两层硅基中.其中上层硅基集成了低噪声放大器、功率放大器、开关、电源调制驱动器和PMOSFET等芯片,下层硅基集成了多功能芯片、串/并转换芯片以及逻辑运算芯片;两层硅基封装之间通过植球进行堆叠.最终样品尺寸仅为20 mm×20 mm×3 mm.实测结果显示,在8～ 12 GHz内,该T/R组件饱和输出功率约为29 dBm,接收增益约为21 dB,接收噪声系数小于3 dB,在具备优良射频性能的同时实现了组件的小型化.     

一种无线传感器网络拥塞控制机制

无线传感器网络的拥塞会增加网络延迟、降低网络吞吐量、尤其不利于传感器网络的节能。该文提出了一种能量有效的无线传感器网络拥塞控制机制,主要包括逐跳拥塞反馈和速率调节两部分。节点周期性地计算其上游节点发送速率和本地缓冲队列可用空间,并根据一定策略来推测在当前周期内发生拥塞的可能性;拥塞节点的上游节点收到拥塞反馈后根据自身缓冲队列的使用情况来降低速率,此拥塞节点同时向其下游节点申请提高发送速率;基站根据应用要求以闭环方式调节源速率。仿真实验表明,该文的拥塞控制机制不仅能有效地缓解网络拥塞,还保持了网络吞吐量的稳定并具有良好的能源有效性。     

非球面拼接测量中偏置误差修正模型

为解决非球面拼接测量时两子孔径重叠区精确拟合问题,根据波像差理论推导了子孔径干涉测量二次曲面偏置误差与运动自由度之间的函数关系,通过分析得出了偏置误差的作用表现形式与Seidle像差相一致的结论,据此建立了定位机构偏置误差修正模型,提出了一种精确拼接测量二次曲面的像差修正方法,该方法利用最小二乘拟合获得拼接系数,可得到孔径间偏置误差估计值,并可在模型中修正高阶系统像差,提高孔径间重叠区拟合精确度.实验表明,该方法拼接精度高于传统校准三方向调整误差拼接法.     

脉冲多普勒雷达导引头角欺骗干扰的极化抑制

角欺骗干扰是脉冲多普勒雷达导引头十分有效的干扰方式,在时频域均难以找到其有效的抑制方法.提出一种利用极化滤波技术抑制角欺骗干扰的新方案.建立了全极化脉冲多普勒雷达信号模型,论述了该技术的原理及实现,并对极化滤波器性能和干扰抑制效果进行仿真.研究结果表明该方案能够实现对角欺骗干扰的有效抑制,在工程实践上也是可行的.     

中高压铝电解电容器阳极箔研究进展

从铝箔杂质和腐蚀液添加剂两个方面概述了国内外在提高中高压铝电解电容器比电容方面的研究进展,其中包括镁、铁、硅、铅等杂质及缓蚀剂和表面活性剂的研究。并介绍了铝电解电容器的几种腐蚀机理,如氯离子的作用机理、腐蚀过程中电流与电位的关系、空位模型。最后预测了铝电解电容器新工艺的可能开发方向。     

抽样对CCD非线性的影响研究

理论分析了CCD的非线性对傅立叶变换轮廓术（FTP）的影响,推出了基频与本周期的高级频谱以及基频与相邻“频谱岛”的高级频谱分离的条件,由此得出了抽样对CCD的非线性引起的频谱混叠的影响。从理论分析和推导过程看出：抽样条件不满足时,基频与本周期的高级频谱或相邻“频谱岛”中的高级频谱（主要是二级、三级频谱）发生混叠;抽样条件满足时,基频与它们发生分离;增大抽样频率,可以提高测量的精度。实验结果表明了理论分析和推导过程的正确性。