Efficient recursive least squares parameter estimation algorithm for accurate nanoCMOS variable gain amplifier performances

ABSTRACT

With the aggressive scaling of integrated circuit technology, parametric estimation is a critical task for designers who looked for solutions to the challenges of some Nanoscale CMOS parameters. This paper presented the prediction of primary parameters of CMOS transistor for 16 nm to 10 nm process nodes using both of Bisquare Weights (BW) method and a novel recursive least squares (RLS) parameter estimation algorithm. The proposed RLS algorithm consists of the minimisation of a quadratic criterion relating to the prediction error in order to attain the best estimated parameters of the developed mathematical model. The obtained results thanks to the proposed RLS algorithm were better than those reached using the BW method. Comparisons between Predictive Technology Model (PTM) data and parameters estimated with RLS algorithm were made to check the validity and the consistency of the proposed algorithm. These predicted primary parameters were helpful to estimate and to optimise the performances of the Variable Gain Amplifier (VGA) which was a basic circuit element with a key role in the design of new upcoming receivers.     

Facile Synthesis of Red/NIR AIE Luminogens with Simple Structures,Bright Emissions,and High Photostabilities,and Their Applications for Specific Imaging of Lipid Droplets and Image‐Guided Photodynamic Therapy

Red/near‐infrared (NIR) fluorescent molecules with aggregation‐induced emission (AIE) characteristics are of great interest in bioimaging and therapeutic applications. However, their complicated synthetic approaches remain the major barrier to implementing these applications. Herein, a one‐pot synthetic strategy to prepare a series of red/NIR‐emissive AIE luminogens (AIEgens) by fine‐tuning their molecular structures and substituents is reported. The obtained AIEgens possess simple structures, good solubilities, large Stokes shifts, and bright emissions, which enable their applications toward in vitro and in vivo imaging without any pre‐encapsulation or ‐modification steps. Excellent targeting specificities to lipid droplets (LDs), remarkable photostabilities, high brightness, and low working concentrations in cell imaging application make them remarkably impressive and superior to commercially available LD‐specific dyes. Interestingly, these AIEgens can efficiently generate reactive oxygen species upon visible light irradiation, endowing their effective application for photodynamic ablation of cancer cells. This study, thus, not only demonstrates a facile synthesis of red/NIR AIEgens for dual applications in simultaneous imaging and therapy, but also offers an ideal architecture for the construction of AIEgens with long emission wavelengths.     

电子材料分析中的能谱干扰峰

主要阐述了在电子元器件分析中用能谱仪作定性分析时常见的一些干扰峰和容易混淆及误判的一些谱峰。主要有和峰、逃逸峰以及一些在元器件材料分析中常遇到的元素特征峰之间的交错重叠的识别和判定方法，并把这些容易误判的谱线整理列成3种表格，以供参考，这些数据基本覆盖了在X射线能谱仪中可能出现的所有相关的谱峰。     

Gettering by heat thermal processing: application in crystalline silicon solar cells

The aim of this work is to getter unwanted impurities from solar grade crystalline silicon (Si) wafers and then to enhance their electronic properties. This was done by forming a sacrificial porous silicon (PS) layer on both sides of the Si wafers and by performing infrared (IR) thermal annealing treatments (at around 950 °C) in a SiCl₄/N₂ controlled atmosphere. The process allows concentrating unwanted impurities in the PS layer and near the PS/silicon interface. These treatments reduce the resistivity by about two orders of magnitude at a depth of about 40 μm and improve the minority carrier diffusion length from 75 to 210 μm. This gettering method was also tested on silicon wafers where grooved fingers and back contacts were achieved using a chemical vapor etching (CVE) method. Front buried metallic contacts and small holes for local back surface field were then achieved after the gettering stage in order to realize silicon solar cells. It was shown that the photovoltaic parameters of gettered silicon solar cells were improved as regard to ungettered ones.     

Nonlinearity in power-current Characteristics of narrow-pulse-driven AlGaInP laser diodes

In this paper, a simple yet effective model is developed to analyze the nonlinearity in power-current characteristics, also known as "kinks", observed in AlGaInP selectively-buried-ridge (SBR) laser diodes driven by narrow pulses (/spl sim/10/sup -7/s). The model takes the temperature-induced waveguide as well as the carrier distribution into account, and the simulation results show good agreement with the experiments. The main factors influencing the kink behavior of SBR lasers are investigated based on this model, and it is believed to be of great help for the optimization AlGaInP laser structure for high-power applications.     

The Impact of Infostation Density on Vehicular Data Dissemination

Vehicle-to-Vehicle and Vehicle-to-Roadside communications are going to become an indispensable part of the modern day automotive experience. For people on the move, vehicular networks can provide critical network connectivity and access to real-time information. Infostations play a vital role in these networks by acting as gateways to the Internet and by extending network connectivity. In this context, an important question is “What is the minimum number of infostations that need to be deployed in an area in order to support vehicular applications?” Optimizing infostation density is vital to understanding and reducing the cost of deployment and management. In this paper, we examine the required infostation density in a highway scenario using different data dissemination models. We start from a simple analysis that captures the required density under idealized assumptions. These models are validated by an event-driven simulator. We then run detailed QualNet simulations on both controlled and realistic vehicular traces to observe the information density trends in practical environments, and consequently propose techniques to improve dissemination performance and reduce the required infostation density.     

Investigations on mode-division multiplexed free-space optical transmission for inter-satellite communication link

Wireless Networks - Inter-satellite data transmission links are very crucial for providing global inter-connectivity. We report designing and investigations on high date rate inter-satellite...     

构建一种新型综合性课程的探索

本文针对现有课程设置过程中,课时和知识内容之间的矛盾,借鉴现有综合课程设计的研究成果,提出以实践内容为主体构建综合性课程的方式解决课时安排的矛盾.具体构建方式是以实践类综合设计为平台,在课程中加入新的理论知识,即要求学生在实践中自学理论知识.本文提出的构建方式具有很强的实用性,对于现有教学中存在的一些问题具有很好的指导...     

InP衬底上InAlAs异变缓冲层和高铟组分InGaAs的生长温度优化

利用气态源分子束外延技术在InP衬底上生长了包含InAlAs异变缓冲层的In0.83Ga0.17As外延层.使用不同生长温度方案生长的高铟InGaAs和InAlAs异变缓冲层的特性分别通过高分辨X射线衍射倒易空间图、原子力显微镜、光致发光和霍尔等测量手段进行了表征.结果表明, InAlAs异变缓冲层的生长温度越低, X射线衍射倒易空间图 (004) 反射面沿Qx方向的衍射峰半峰宽就越宽, 外延层和衬底之间的倾角就越大, 同时样品表面粗糙度越高.这意味着材料的缺陷增加, 弛豫不充分.对于生长在具有相同生长温度的InAlAs异变缓冲层上的In0.83Ga0.17As外延层, 采用较高的生长温度时, X射线衍射倒易空间图 (004) 反射面沿Qx方向的衍射峰半峰宽较小, 77K下有更强的光致发光, 但是表面粗糙度会有所增加.这说明生长温度提高后, 材料中的缺陷得到抑制.