Neural-Net Analysis of the Plasticity of ÉP-450 Ferrite–Martensite Steel with Different Alloying Element Concentrations

The results of a computational experiment with a neural-net model simulating the effect of the chemical composition on the plastic properties of ÉP-450 steel are presented. It is shown that computer-aided development of reactor steel with prescribed properties is, in principle, possible.     

SVBR-75/100 Multipurpose Modular Low-Power Fast Reactor with Lead–Bismuth Coolant

The results of development work on the SVBR-75/100 modular fast reactor cooled by lead–bismuth coolant are presented. The design is based on the experience gained operating reactors in nuclear-powered submarines. The SVBR-75/100 reactor is inherently safe because of its low power, the chemical inertness and high boiling point of the lead–bismuth coolant, and the integrated basin-type arrangement of the first-loop equipment. This eliminates the conflict between the safety and economic requirements that is characteristic of conventional-type reactors. The lower power makes it possible to build the reactor in a factory and deliver the reactor using any form of transportation to the nuclear power plant site. All safety systems operate passively. Most of these systems are used as normal-operating systems. This creates conditions for multipurpose applications of such reactor modules in developed and developing countries.     

Ion-beam-defect processes in group-III nitrides and ZnO

Recently, there has been much interest in wide band-gap wurtzite semiconductors such as group-III nitrides (GaN, AlGaN, and InGaN) and ZnO. Ion-beam-defect processes are considerably more complex in these wurtzite semiconductors than in the case of both elemental and group-III-V cubic semiconductors. This brief review focuses on our recent studies of the following aspects of ion-beam-defect processes: (i) effects of implanted species and the density of collision cascades, (ii) the nature of ion-beam-produced planar defects in GaN, (iii) defect production in GaN by swift heavy ions, (iv) blistering of H-implanted GaN, (v) electrical isolation of GaN and ZnO, (vi) the effect of Al and In content on defect processes in III-nitrides, and (vii) structural damage in ZnO with an intriguing effect of the formation of an anomalous defect peak. Emphasis is given to unusual ion-beam-defect processes and to the physical mechanisms underlying them.     

Boiling: Size Distribution of Bubbles as Demanded by the Principle of Maximum Information

The principle of maximum informational entropy is used to find the probability density function for the departure radius of a bubble in boiling on a solid surface. A general relation is derived, which leads to particular expressions.     

Relaxor Behavior of Ge-Doped TlInS2

The dielectric and pyroelectric properties of Ge-doped (0.1 mol %) TlInS₂ crystals are studied. The results demonstrate that TlInS₂ is a ferroelectric relaxor. The experimental data are used to evaluate, using the Vogel–Fulcher relation, the activation energy (0.045 eV), preexponential factor (f ₀ = 2 × 10¹³ Hz), and the dipole-freezing temperature (T _F = 142 K) and to determine the temperature range of the stable relaxor (nanodomain) state and the temperature of the transition to the ferroelectric (macrodomain) state, accompanied by an anomaly in the temperature-dependent pyroelectric coefficient.     

Constitutive modelling and numerical simulation of multivariant phase transformation in superelastic shape‐memory alloys

This work concerns the micromechanical constitutive modelling, algorithmic implementation and numerical simulation of polycrystalline superelastic alloys under multiaxial loading. The model is formulated in finite deformations and incorporates the effect of texture. The numerical implementation is based on the constrained minimization of the Helmholtz free energy with dissipation. Simulations are conducted for thin tubes of Nitinol under tension–torsion, as well as for a simplified model of a biomedical stent. Copyright © 2004 John Wiley & Sons, Ltd.     

Electrosprayed and selenized Cu/In metal particle films

Nano-particulate copper and indium metal layers of 1-2 μm have been deposited by non-vacuum techniques such as doctor blade, screen printing and electrospray using alcoholic suspension pastes. Electrospray showed a high efficiency of material usage and yielded the most uniform morphology. The metal precursor layers were subjected to a thermal treatment (500-600 °C) in selenium vapor to convert the porous metal layers into CuInSe₂ compound layers. The chemical conversion, investigated by X-ray diffraction, showed the presence of the In₂O₃ impurity phase in the precursor as well as in the selenized layers.     

Preparation and properties of heavy-metal halide glasses

We have studied the effect of In³⁺, Pb²⁺, Gd³⁺, and Cl (heavier ions) substitutions for Al³⁺, Ba²⁺, La³⁺, and F^? on the crystallization stability and UV/IR optical properties of HBLAN fluorohafnatc glasses (HfF₄-BaF₂-LaF₃-AlF₃-NaF system). We obtained stable glasses containing InF₃ and BaCl₂ instead of AlF₃ and BaF₂, respectively, and offering increased IR transmission. The presence of CCl₄ in the process atmosphere and the removal of oxygen-containing impurities via directional solidification are shown to have an advantageous effect on the optical quality of the glasses. The fluoride-chloride glasses are capable of accommodating about 1.5 times higher levels of rare-earth activators in comparison with their fluoride analogs.     

Thermal Stressed State of a Hollow Metallic Cylinder under the Action of Electromagnetic Fields in the Mode of Damped Sinusoid

We determine the temperature fields and stresses formed in a long hollow conducting cylinder under the action of pulsed electromagnetic fields specified by the values of the axial component of the vector of intensity of a uniform magnetic field on the inner and outer surfaces. We consider the case where the electromagnetic action obeys the law of damped sinusoid on the inner and outer surfaces of the cylinder.     

45 GHz self-pulsation with narrow linewidth in quantum dot Fabry-Perot semiconductor lasers at 1.5 /spl mu/m

Self-pulsation at 45 GHz repetition frequency has been demonstrated in 1.5 /spl mu/m monolithic single-section quantum dot Fabry-Perot semiconductor lasers without saturable absorber. The mode-beating exhibits a narrow linewidth below 100 kHz, demonstrating high phase correlation between these modes. Such modelocked lasers open ways to low timing-jitter components for clock recovery or millimetre-wave generation in wireless transmission applications.