SpecSyn: an environment supporting the specify-explore-refineparadigm for hardware/software system design

System-level design issues are gaining increasing attention, as behavioral synthesis tools and methodologies mature. We present the SpecSyn system-level design environment, which supports the new specify-explore-refine (SER) design paradigm. This three-step approach to design includes precise specification of system functionality, rapid exploration of numerous system-level design options, and refinement of the specification into one reflecting the chosen option. A system-level design option consists of an allocation of system components, such as standard and custom processors, memories, and buses, and a partitioning of functionality among those components. After refinement, the functionality assigned to each component can then he synthesized to hardware or compiled to software. We describe the issues and approaches for each part of the SpecSyn environment. The new paradigm and environment are expected to lead to a more than ten times reduction in design time, and our experiments support this expectation     

Strain relaxation in SiGe due to process induced defects and their subsequent annealing behavior

Ion implantation and reactive ion etching are known to create defects in silicon which get cured during subsequent annealing operations. In this paper we have reported the annealing behavior of phosphorus implanted into strained SiGe layer at room temperature. The implantation was performed at 155 KeV with a dose of 1×10¹⁴/cm². Post implantation annealing was performed at 600, 700, 800 and 900°C for 10 s in a rapid thermal process furnace. Annealing behavior of defects generated as a consequence of dry etching is also reported. RTP annealing on reactive ion etching (RIE) etched samples were performed at 650, 700, 750 and 800 °C. I–V, C–V and DLTS measurements hint towards the presence of permanent dislocation loops created as a consequence of RIE and implantation causing strain relaxation.     

Analysis of an Approximate Decorrelating Detector

In this paper an approximate decorrelating detector is analyzed on the basis of a first order approximation to the inverse crosscorrelation matrix of signature waveforms. The approximation is fairly accurate for systems with low crosscorrelations and is exact in the two-user synchronous case. We present an exact as well as approximate analysis of the bit-error-rate performance of this detector on a channel that is subject to flat fading, and also specifically for the case of random signature waveforms. The detector outperforms the conventional matched filter receiver in terms of BER. The approximate decorrelator (while not being near-far resistant like the decorrelating detector) is fairly robust to imperfections in power control. Power trade-off regions are identified which characterize the significant advantage that the approximate decorrelator provides over the matched filter receiver. The reduced complexity of the approximate decorrelator and performance gains over the conventional matched filter makes it a viable alternative for implementation in practical CDMA systems, in particular in those where the signature waveforms span many symbol intervals.     

LaNiO3 and Cu3Ge contacts to YBa2Cu3O7-x films

Metallization of high-T_c superconductors using low resistivity metal oxides and Cu-Ge alloys has been investigated on high quality pulsed laser deposited epitaxial YBa₂Cu₃O_7-x (YBCO) films. Epitaxial LaNiO₃ (LNO) thin films have been grown on YBCO films at 700°C using pulsed laser deposition. The specific resistivity of LNO was measured to be 50 μΩ-cm at 300K which decreases to 19 μΩ-cm at 100K indicating good metallicity of the LNO films. The contact resistance of LNO-YBCO thin film interface was found to be reasonably low (of the order of 10^-4Ω-cm² at 77K) which suggests that the interface formed between the two films is quite clean and LNO can emerge as a promising metal electrode-material to YBCO films. A preliminary investigation related to the compatibility of Cu₃Ge alloy as a contact metallization material to YBCO films is discussed. The usage of other oxide based low resistivity materials such as SrRuO₃ (SRO) and SrVO₃ (SVO) for metallization of high-T_c YBCO superconductor films is also discussed.     

High quality gate dielectrics formed by rapid thermal chemical vapor deposition of silane and nitrous oxide

In the present study, we have performed electrical characterization of oxides deposited via rapid thermal chemical vapor deposition using SiH₄ and N₂O. We have investigated the effect of temperature, pressure, and SiH₄ to N₂O ratio on the electrical and material properties of as-deposited films. We have found that as-deposited oxides deposited at low temperatures, low pressures, and with a low silane to nitrous oxide ratio of ～0.5% give good material and electrical properties. The as-deposited films are stoichiometric in nature and have high deposition rates. As-deposited films had very low D_it values, high breakdown fields, and excellent subthreshold swing. The leakage currents and metal oxide semiconductor field effect transistor current drive, although lower than thermal oxides, were found to be quite acceptable. We have also investigated the thickness dependence of the films and found that as the film thickness is reduced below 50Å, the reliability improves for all oxides including the silicon-rich deposited oxides.     

Minimum Duration Outage for CDMA Cellular Systems: A Level Crossing Analysis

Traditionally, outage for CDMA cellular systems has been defined as the signal level (or, more precisely, the signal-to-interference ratio (SIR)) falling below a required threshold. In real cellular environments, it is not the instantaneous drop of the signal strength below the threshold that determines outage. It is, in fact, the duration of time below a threshold that determines outage for cellular systems. Moreover, the static analysis of outage precludes the time correlation in the signals which is important in real systems owing to mobility, fading and power control. In this paper, we analyze minimum duration outages for such systems, where outage is defined as an excursion of the SIR below a level for a certain minimum duration. We formulate the outage condition as a level crossing problem and extend asymptotic results from the theory of level crossings to derive analytical results for the probability of outage. This method enables us to include the time correlation of signals in the analysis as well. The validity of the asymptotic results is verified using some exact results as well as simulations. These minimum duration outages have implications in redefining user capacity and handoff performance.     

Reliability analysis of k-out-of-n systems with partially repairable multi-state components

In some environments the components might not fail fully, but can lead to degradation and the efficiency of the system may decreases. However, the degraded components can be restored back through a proper repair mechanism. In this paper, we present a model to perform reliability analysis of k-out-of-n systems assuming that components are subjected to three states such as good, degraded, and catastrophic failure. We also present expressions for reliability and mean time to failure (MTTF) of k-out-of-n systems. Simple reliability and MTTF expressions for the triple-modular redundant (TMR) system, and numerical examples are also presented in this study.     

An algorithm to solve integer programming problems: An efficient tool for reliability design

In many reliability design problems, the decision variables can only have integer values. The redundancy allocation is an example of one such problem; others include spare parts allocation, or repairmen allocation, which necessitate an integer programming formulation. In other words, integer programming plays an important role in system reliability optimization. In this paper, an algorithm is presented which provides an exact, simple and economical solution to any general class of integer programming problems and thereby offers reliability designers an efficient tool for system design. The algorithm can be used effectively to solve a wide variety of reliability design problems. The scope of use of this algorithm is also indicated and the procedure is illustrated by an example.     

Quadrilateral-star transformation—I. Transformation equations

For large well-connected reliability networks, it has been observed that the delta and star transformations are sometimes unable to tackle the complexity of the network. The quadrilateral-star transformation may be helpful in initiating network reduction under these circumstances. Probability conditions for approximate equivalence of quadrilateral and star networks have been derived. Using these conditions, six different sets of transformation equations have been obtained and compared from the point of view of accuracy.     

Minimal pathset and minimal cutsets using search technique

Application of graph theory to reliability analysis was first made in 1970 ^[1]. Over the years, a large number of computer programmes have been developed to determine the spanning trees, the minimal paths and cutsets, which are essential for determining the reliability of the network. In recent years, there has been an interest 2., 4. in developing small desk top calculators for specific purposes, which could be used by the designers of transportation systems, communication systems, etc. In this article the authors present an approach to design a microprocessor based equipment to determine minimal pathset and minimal cutset from the incidence matrix of the graph. The authors have presented a new design approach, based on search technique. The salient feature of the new approach is a novel tracing process in which the desired graph is traced by operating a set of constraints. The new design approach has already been used by the authors to develop a microprocessor based spanning tree generator 2., 3..