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141.
Although the density of states (DOS) distribution of charge transporting states in an organic semiconductor is vital for device operation, its experimental assessment is not at all straightforward. In this work, the technique of energy resolved–electrochemical impedance spectroscopy (ER-EIS) is employed to determine the DOS distributions of valence (highest occupied molecular orbital (HOMO)) as well as electron (lowest unoccupied molecular orbital (LUMO)) states in several organic semiconductors in the form of neat and blended films. In all cases, the core of the inferred DOS distributions are Gaussians that sometimes carry low energy tails. A comparison of the HOMO and LUMO DOS of P3HT inferred from ER-EIS and photoemission (PE) or inverse PE (IPE) spectroscopy indicates that the PE/IPE spectra are by a factor of 2–3 broader than the ER-EIS spectra, implying that they overestimate the width of the distributions. A comparison of neat films of MeLPPP and SF-PDI2 or PC(61)BM with corresponding blends reveals an increased width of the DOS in the blends. The results demonstrate that this technique does not only allow mapping the DOS distributions over five orders of magnitude and over a wide energy window of 7 eV, but can also delineate changes that occur upon blending.  相似文献   
142.
The fundamental nature of charge transport in highly ordered organic semiconductors is under constant debate. At cryogenic temperatures, effects within the semiconductor such as traps or the interaction of charge carriers with the insulating substrate (dipolar disorder or Fröhlich polarons) are known to limit carrier motion. In comparison, at elevated temperatures, where charge carrier mobility often also decreases as function of temperature, phonon scattering or dynamic disorder are frequently discussed mechanisms, but the exact microscopic cause that limits carrier motion is debated. Here, the mobility in the temperature range between 200 and 420 K as function of carrier density is explored in highly ordered perylene‐diimide from 3 to 9 nm thin films. It is observed that above room temperature increasing the gate electric field or decreasing the semiconducting film thickness leads to a suppression of the charge carrier mobility. Via X‐ray diffraction measurements at various temperatures and electric fields, changes of the thin film structure are excluded as cause for the observed mobility decrease. The experimental findings point toward scattering sites or traps at the semiconductor–dielectric interface, or in the dielectric as limiting factor for carrier mobility, whose role is usually neglected at elevated temperatures.  相似文献   
143.
Telecommunication Systems - In the era of Internet-of-things (IoT), the future 5G networks are supposed to provide ubiquitous connectivity, high speed, as well as low latency and energy efficiency...  相似文献   
144.

SciencenewsTriz*-Check up

Seminar zum systematischen Erfinden  相似文献   
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In Mott materials strong electron correlation yields a spectrum of complex electronic structures. Recent synthesis advancements open realistic opportunities for harnessing Mott physics to design transformative devices. However, a major bottleneck in realizing such devices remains the lack of control over the electron correlation strength. This stems from the complexity of the electronic structure, which often veils the basic mechanisms underlying the correlation strength. This study presents control of the correlation strength by tuning the degree of orbital overlap using picometer-scale lattice engineering. This study illustrates how bandwidth control and concurrent symmetry breaking can govern the electronic structure of a correlated SrVO3 model system. This study shows how tensile and compressive biaxial strain oppositely affect the SrVO3 in-plane and out-of-plane orbital occupancy, resulting in the partial alleviation of the orbital degeneracy. The spectral weight redistribution under strain is derived and explained, which illustrates how high tensile strain drives the system toward a Mott insulating state. Implementation of such concepts can push correlated electron phenomena closer toward new solid-state devices and circuits. These findings therefore pave the way for understanding and controlling electron correlation in a broad range of functional materials, driving this powerful resource for novel electronics closer toward practical realization.  相似文献   
148.
Effects of jasplakinolide (JSP), a stabilizer of F-actin, and latrunculin A (LTA), a destabilizer of F-actin, on a series of events occurring in the execution phase of staurosporine (STS)-induced apoptotic processes were studied using human osteosarcoma 143B cells. Time-dependent apparent increases of the population of cells with collapsed membrane potential of mitochondria (Delta Psi(m)) caused by STS treatment were not due to actual decreases in the Delta Psi(m) per cell, but due to the fragmentation of cells resulting in decreases in the number of active mitochondria per cell. Decreases in the Delta Psi(m) in fragmented cells occurred late in the execution phase. Both JSP and LAT failed to prevent STS-induced release of cytochrome c from mitochondria followed by the activation of caspases 3 and 9, the cleavage of poly (ADP-ribose) polymerase (PARP) and apoptotic nuclear fragmentation. However, both drugs prevented STS-induced apoptotic cell fragmentation and decreases in the Delta Psi(m). These results indicate that physicochemical states of actin filaments play a certain role in the execution phase of STS-induced apoptotic processes.  相似文献   
149.
We describe the QoS‐based rerouting algorithm that is designed to implement a two‐phase inter‐switch handoff scheme for wireless ATM networks. We propose to use path extension for each inter‐switch handoff, and invoke path optimization when the handoff path exceeds the delay constraint or maximum path extension hops constraint. We study three types of path optimization schemes: combined QoS‐based, delay‐based and hop based path rerouting schemes. Copyright © 2001 John Wiley & Sons, Ltd.  相似文献   
150.
Several hemostatic strategies rely on the use of blood components such as fibrinogen and thrombin, which suffer from high cost and short shelf‐life. Here, a cost‐effective synthetic biomaterial is developed for rapid local hemostasis. Instead of using thrombin, thrombin‐receptor‐agonist‐peptide‐6 (TRAP6) is covalently engineered in polyvinyl alcohol (PVA) hydrogels. Soluble PVA‐TRAP6 is first prepared by covalent attachment of cysteine‐containing TRAP6 onto the backbone of PVA‐norbornenes (PVA‐NB) through photoconjugation. Cytotoxicity studies using C2C12 myoblasts indicate that PVA‐NB and PVA‐TRAP6 are nontoxic. Thromboelastography reveals that hemostatic activity of TRAP6 is retained in conjugated form, which is comparable to free TRAP6 solutions with equal concentrations. A 0.1% PVA‐TRAP6 solution can shorten the clotting time (CT) to ca. 45% of the physiological CT. High platelet‐activating efficiency is further confirmed by platelet aggregation assay and flow cytometry (FACS). For potential clinical applications, TRAP6‐presenting hydrogel particulates (PVA‐TRAP6‐P) are developed for local platelet activation and hemostasis. PVA‐TRAP6‐P is prepared by biofunctionalization of photopolymerized PVA‐NB hydrogel particulates (PVA‐NB‐P) with TRAP6. It is demonstrated that PVA‐TRAP6‐P can effectively shorten the CT to ca. 50%. FACS shows that PVA‐TRAP6‐P can activate platelets to a comparable extent as soluble TRAP6 control. Altogether, PVA‐TRAP6‐P represents a promising class of biomaterials for safe hemostasis and wound healing.  相似文献   
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