Pollution-prevention analysis and the quenching of steels

With the goal of improving process efficiency and reducing risk, this article describes a pollution-prevention analysis technique that can be applied to most secondary steel heat-treating operations involving quenching. Costs, risk assessments, and pollution-prevention options are discussed, as are the effects of quenching on two subsequent processes—parts cleaning and tempering. In contrast to many process comparisons, the issues of worker exposure, material safety and toxicity, liability, waste reduction, reclamation, and disposal are emphasized.     

Photostability of polyetherurethaneureas

Polyetherurethaneureas (PEUUs) were synthesised from polyethylene-glycols (PEGs) of molecular weight 400, 600 and 1000, 4,4′-diphenylmethanediisocyanate (MDI) and aliphatic diamine chain extenders, 1,3-propanediamine (PDA) and 1,6-hexanediamine (HDA). Polymer films were irradiated with 365 nm light at 293 K and the effects of polyether soft segment length and urea hard segment on photo-oxidative stability were studied by following the variation in weight-average molecular weight (M _w), gel formation and stress-strain properties. Changes in ultraviolet and infrared spectroscopy were monitored on photo-oxidation and hydroperoxide content determined. The soft segment length was increased by increasing the molecular weight of PEG from 400 to 1000 and hard segment structure was changed by variation of diamine. It was noted that the structure of urea and polyether soft segment length plays an important role in photostability of PEUUs. PDA chain extended PEUUs were more stable than HDA chain extended PEUUs.     

Electron traps created in gate oxides by Fowler–Nordheim injections

Two types of electron traps, donor-like and acceptor-like, are created in the gate oxide of metal-oxide-semiconductor capacitors by Fowler–Nordheim electron injections. Electrical properties (areal density, capture cross-section, centroid) of each type of trap are determined by using the avalanche electron injection method and by combining capacitance–voltage and current–voltage measurements. These properties are measured with regard to the Fowler–Nordheim fluence up to breakdown and for both injection modes (electrons injected either from the gate or from the substrate of capacitors).     

Simplified characterization of uniaxial and biaxial nonlinearoptical crystals: a plea for standardization of nomenclature andconventions

Standards which eliminate ambiguity in reporting nonlinear phenomena, especially in the increasingly complex realm of biaxial crystals, are proposed. In order to restore uniformity to the designation of crystallographic axes and crystal tensor properties, adoption of IEEE/ANSI Std. 176, with a small but much needed modification for crystal class mm2, is recommended. For the reporting of nonlinear interaction characteristics, other frames are proposed which result in simpler rules than heretofore given for categorizing phase-matching loci, and for characterizing eigenmode polarizations, double refraction, effective nonlinear coupling, and first- and second-order acceptance bandwidths (angular, spectral, thermal) along these loci. Similarities as well as differences between biaxial and uniaxial crystals are emphasized     

Vibrational control of linear time lag systems with arbitrarilylarge but bounded delays

It is shown that vibrational stabilization can be effective for linear systems with large bounded delays. Theorems are given that define the procedures for the search of the stabilizing vibrations. Robust oscillatory stabilization insensitive to the delay size is also shown to take place for some classes of systems     

The accumulation channel driven bipolar transistor (ACBT)

A new three-terminal power switch called the Accumulation Channel driven Bipolar Transistor (ACBT) is proposed and experimentally demonstrated. In the on-state, the characteristics of the ACBT have been found to approach those of a P-I-N rectifier with a MOSFET in series for regulating its current, an equivalent circuit considered to be an ideal for MOS/Bipolar power devices. Unlike previous devices, the high off-state voltage is supported by the formation of a potential barrier to the flow of electrons from the N⁺ emitter into the N-drift region within a depletion region. The absence of the P-base region within the ACBT cells eliminates the parasitic four layer PNPN thyristor which had limited the performance of previous MOS/Bipolar transistor structures. Consequently, the ACBT structure has large maximum controllable and surge current densities in addition to low on-state voltage drop and high-voltage current saturation capability     

Depth resolution calculations for heavy-ion microbeam RBS analysis

A detailed study has been made on the use of MeV heavy ions (Z₁ = 6–8) for microbeam Rutherford backscattering (RBS) analysis, to improve the depth resolution of this technique. The algorithm for determination of the depth resolution was created and applied to the Zagreb microbeam facility. Theoretical estimates of depth resolution for C and O ion RBS analysis of thin oxide films and semiconductors, using annular silicon surface barrier detector (SSBD), are compared to those for proton backscattering analysis. Depth resolution in certain cases may be improved by increasing the heavy-ion energy. Therefore, by the proper choice of the heavy ion and the heavy-ion energy, the depth resolution may be improved, maintaining the efficiency of the RBS method.