A Surface Tailoring Method of Ultrathin Polymer Gate Dielectrics for Organic Transistors: Improved Device Performance and the Thermal Stability Thereof

Tailoring the surface of the dielectric layer is of critical importance to form a good interface with the following channel layer for organic thin film transistors (OTFTs). Here, a simple surface treatment method is applied onto an ultrathin (<15 nm) organosilicon‐based dielectric layer via the initiated chemical vapor deposition (iCVD) to make it compatible with organic semiconductors without degrading its insulating property. A molecular‐thin oxide capping layer is formed on a 15 nm thick poly(1,3,5‐trimetyl‐1,3,5‐trivinyl cyclotrisiloxane) (pV3D3) by a brief oxygen plasma treatment. The capping layer greatly enhances the thermal stability of the dielectrics, without degrading the original mechanical flexibility and insulating performance of the dielectrics. Moreover, the surface silanol functionalities formed by the plasma treatment can also be utilized for the surface modification with silane compounds. The surface‐modified dielectrics are applied to fabricate low‐voltage operating (<5 V) pentacene‐based OTFTs. The highest field‐effect mobility of the device with the surface‐treated 15 nm thick pV3D3 is 0.59 cm² V^?1 s^?1, which is improved up to two times compared to the TFT with the pristine pV3D3. It is believed that the simple surface treatment method can widely extend the applicability of the highly robust, ultrathin, and flexible pV3D3 gate dielectrics to design the surface of the dielectrics to match well various kinds of organic semiconductors.     

Formation and Accumulation of Intragranular Pores in the Hydrothermally Synthesized Barium Titanate Nanoparticles

As highly integrated circuits are demanded for high‐performance electric devices, small sizes of barium titanate (BaTiO₃) as a dielectric material are desirable for the application of multilayer ceramic capacitors. Since the small sizes of the particles degrade the dielectric property, especially below a certain critical size, understanding the probable cause is significant for the high‐performance capacitors. Here, we have demonstrated nanosized BaTiO₃ with average size below 30 nm and a uniform size distribution. High‐resolution transmission electron microscopy (TEM) shows that the as‐synthesized BaTiO₃ contains intragranular pores. We have analyzed the correlation between the intragranular pores inside nanoparticles and their phase ratio of cubic and tetragonal. We have found that the presence of the intragranular pores affects low tetragonality of BaTiO₃ particles, and the intragranular pores are generated by the accumulation of hydroxyl groups during hydrothermal reaction. Formation and accumulation of intragranular pores have been investigated by ex‐situ synchrotron X‐ray diffraction and TEM analysis, suggesting the phase evolution model of nanosized BaTiO₃.     

A Boronic Acid Assay for the Detection of Mucin‐1 Glycoprotein from Cancer Cells

Cell surface glycoproteins are commonly aberrant in disease and act as biomarkers that facilitate diagnostics. Mucin‐1 (MUC1) is a prominent example, exhibiting truncated glycosylation in cancer. We present herein a boronic acid microplate assay for sensitive and high‐throughput detection of such glycoproteins. The immobilization of biotin–boronic acid 1 onto streptavidin plates generated a multivalent surface for glycoprotein recruitment and detection. We first validated the binding properties of 1 in solution through titrations with alizarin dye. Next, the microplate assay was explored through horseradish peroxidase (HRP) analysis as a proof‐of‐concept glycoprotein with chemiluminescence detection. Finally, this platform was applied for the detection of MUC1 directly from MCF‐7 human breast cancer cell lysates by using an HRP‐tagged antibody that targets the cancerous form of this glycoprotein. Sensitive, dose‐dependent detection of MUC1 was observed, showcasing the efficacy of this platform for detecting disease‐associated glycoproteins.     

Low-bandgap copolymers consisting of 2,1,3-benzoselenadiazole and carbazole derivatives with thiophene or selenophene π-bridges

Two donor–acceptor-type alternating copolymers consisting of 2,1,3-benzoselenadiazole and carbazole derivatives with thiophene or selenophene π-bridges were synthesized by Suzuki cross-coupling polymerization, and their optical, electrochemical, and photovoltaic properties were compared. The selenophene π-bridged copolymer (PCz-DSeBSe) exhibited a smaller band-gap (1.82 eV) than the thiophene-bridged polymer (PCz-DTBSe; 1.89 eV). PCz-DSeBSe also showed a deeper highest occupied molecular orbital energy level (−5.36 eV) than PCz-DTBSe (−5.20 eV). Moreover, the PCz-DSeBSe thin film showed higher crystallinity and hole mobility than the PCz-DTBSe thin film. Organic photovoltaic devices were fabricated using the polymers as the donors and [6,6]-phenyl-C₇₁-butyric acid methyl ester (PC₇₁BM) as the acceptor. The device using PCz-DSeBSe showed a higher open circuit voltage (V_oc), short circuit current density (J_sc), and power conversion efficiency (PCE) than that using PCz-DTBSe. The fabricated indium tin oxide/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/PCz-DSeBSe:PC₇₁BM/LiF/Al device showed the maximum PCE of 2.88% with a J_sc of 7.87 mA/cm², an V_oc of 0.80 V, and a fill factor of 0.50 under AM 1.5G irradiation (100 mW/cm²).     

Multigroup pin power reconstruction with two-dimensional source expansion and corner flux discontinuity

A pin power reconstruction method that is readily applicable to multigroup problems with superior accuracy is presented for applications involving rectangular fuel assemblies. It employs a two-dimensional (2D), fourth order Legendre expansion of the source distribution that naturally leads to a group-decoupled, 2D semi-analytic solution of the neutron diffusion equation. The four surface average currents and four corner fluxes are used as the boundary conditions to uniquely specify the homogenous solution. The corner fluxes and source expansion coefficients are iteratively determined using the condition of corner point balance and the orthogonal property of the Lengedre functions. Corner discontinuity is incorporated in the calculation of the corner fluxes which turns out to be very effective in the cases of enrichment zoning. The accuracy of the proposed method is assessed by performing the two-step core calculations for the L336C5, C5G7MOX, and MOX core transient benchmark problems and then by comparing with the direct whole-core transport solutions. The results indicate that the proposed method is as accurate as the fully analytic method and works well irrespective the number of groups. However, it is also noted that somewhat larger errors are inevitable at the peripheral assemblies near the reflector in which the error associated with a prioi generation of the homogenized cross-sections and form functions is not trivial.     

Antimicrobial resistance of Escherichia coli O157 from cattle in Korea

Of 45 Escherichia coli O157 isolates from cattle feces, which were collected between May 2000 and September 2003 in Korea, 32 were resistant to at least 1 antibiotic and 28 were resistant to 4 or more antibiotics, with 32, 30 and 30 of the isolates being resistant to streptomycin, tetracycline and sulfisoxazole, respectively. Two isolates were resistant to fluoroquinolones and to 10 or more of the 22 other antimicrobial agents that were tested. Thirteen antimicrobial resistant patterns were observed. The most frequent resistance type, which was found for 11 isolates, was streptomycin-tetracycline-kanamycin-ampicillin-piperacillin-cephalothin-sulfisoxazole-ticarcillin. Polymerase chain reaction (PCR) analysis of the isolates for E. coli O157 virulence markers revealed that 25 of the resistant E. coli O157 isolates tested positive for stx2 or both stx1 and stx2 genes. These findings suggest that many of the resistant E. coli O157 isolates might cause disease in humans.     

A study on an equivalent model of the threaded fasteners in complex structures through tightening and loosening analysis

Journal of Mechanical Science and Technology - The threaded fasteners are typical machine components in tightening of the machine parts and structures. In addition, as threaded fasteners are easy...     

Simultaneous Formation of Ohmic Contacts on p +- and n +-4H-SiC Using a Ti/Ni Bilayer

In this work, Ti/Ni bilayer contacts were fabricated on both p ⁺- and n ⁺-4H-SiC formed by ion implantation, and the effects of the Ti interlayer on the contact resistance and interfacial microstructure were studied. Adoption of a thin (10 nm) Ti interlayer resulted in specific contact resistance of 4.8 μΩ cm² and 1.3 mΩ cm² on n ⁺- and p ⁺-4H-SiC, respectively, comparable to the values for contacts using only Ni. Moreover, contacts using Ti/Ni provide a flat and uniform interface between Ni₂Si and SiC, whereas discontinuous, agglomerated Ni₂Si islands are formed without the use of a Ti interlayer. In addition, the Ti interlayer was demonstrated to effectively dissociate the thin oxide film on SiC, which is advantageous for low-resistance, reliable ohmic contact formation. In summary, use of a Ti/Ni bilayer is a promising solution for one-step formation of ohmic contacts on both p ⁺- and n ⁺-4H-SiC, being especially suitable for SiC n-channel metal-oxide-semiconductor field-effect transistor (nMOSFET) fabrication.     

Novel Digital Nonvolatile Memory Devices Based on Semiconducting Polymer Thin Films

Recent increases in the demand for mobile devices have stimulated the development of nonvolatile memory devices with high performance. In this Communication, we describe the fabrication of low‐cost, high‐performance, digital nonvolatile memory devices based on semiconducting polymers, poly(o‐anthranilic acid) and poly(o‐anthranilic acid‐co‐aniline). These memory devices have ground‐breaking and novel current–voltage switching characteristics. The devices are switchable in a very low voltage range (which is much less than those of all other devices reported so far) with a very high ON/OFF current ratio (which is on the order of 10⁵). The low critical voltages have the advantage for nonvolatile memory device applications of low operation voltages and hence low power consumption. With this very low power consumption, the devices demonstrate in air ambient to have very stable ON‐ and OFF‐states without any degradation for a very long time (which has been confirmed up to one year so far) and to be repeatedly written, read and erased. Our study proposes that the ON/OFF switching of the devices is mainly governed by a filament mechanism. The high ON/OFF switching ratio and stability of these devices, as well as their repeatable writing, reading and erasing capability with low power consumption, opens up the possibility of the mass production of high performance digital nonvolatile polymer memory devices with low cost. Further, these devices promise to revolutionize microelectronics by providing extremely inexpensive, lightweight, and versatile components that can be printed onto plastics, glasses or metal foils.